MUN52xxDWT DEVICE MARKING, RESISTOR VALUES AND ORDERING INFORMATION Device Marking R(K) R2(K) Shipping MUN52DWT SOT-363 7A /Tape&Reel MUN522DW
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1 MUN52xxDWT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN52DWT series, two BRT devices are housed in the SOT363 package which is ideal for low power surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count MAXIMUM RATINGS (T A = 25 C unless otherwise noted, common for Q and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc Collector Current 00 madc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation P D 87 (Note.) mw T A = 25 C Derate above 25 C 256 (Note 2.).5 (Note.) 2.0 (Note 2.) mw/ C Thermal Resistance R θja 670 (Note.) C/W Junction-to-Ambient 490 (Note 2.) Q 2 R2 R 2 3 7X 6 R 5 R2 MARKING DIAGRAM X = Device Marking = (See Page 2) 4 Q DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation T A = 25 C Derate above 25 C P D 250 (Note.) 385 (Note 2.) 2.0 (Note.) mw mw/ C 3.0 (Note 2.) Thermal Resistance R θja 493 (Note.) C/W Junction-to-Ambient 325 (Note 2.) Thermal Resistance R θjl 88 (Note.) C/W Junction-to-Lead 208 (Note 2.) Junction and Storage Temperature T J, T stg 55 to +50 C. Minimum Pad 2. x.0 inch Pad Rev. 第 頁
2 MUN52xxDWT DEVICE MARKING, RESISTOR VALUES AND ORDERING INFORMATION Device Marking R(K) R2(K) Shipping MUN52DWT SOT-363 7A /Tape&Reel MUN522DWT SOT-363 7B /Tape&Reel MUN523DWT SOT-363 7C /Tape&Reel MUN524DWT SOT-363 7D /Tape&Reel MUN525DWT SOT-363 7E /Tape&Reel MUN526DWT SOT-363 7F /Tape&Reel MUN5230DWT SOT-363 7G 3000/Tape&Reel MUN523DWT SOT-363 7H /Tape&Reel MUN5232DWT SOT-363 7J /Tape&Reel MUN5233DWT SOT-363 7K /Tape&Reel MUN5234DWT SOT-363 7L /Tape&Reel MUN5235DWT SOT-363 7M /Tape&Reel MUN5236DWT SOT-363 7N /Tape&Reel MUN5237DWT SOT-363 7P /Tape&Reel Rev. 第 2 頁
3 MUN52DWTH ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted, common for Q and Q 2 ) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = 50 V, I E = 0) BO 00 nadc Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0) EO 500 nadc Emitter-Base Cutoff Current MUN52DWT I EBO 0.5 madc (V EB = 6.0 V, = 0) MUN522DWT MUN523DWT MUN524DWT MUN525DWT MUN526DWT MUN5230DWT MUN523DWT MUN5232DWT MUN5233DWT MUN5234DWT MUN5235DWT MUN5236DWT MUN5237DWT Collector-Base Breakdown Voltage ( = 0 µa, I E = 0) V (BR)CBO 50 Vdc Collector-Emitter Breakdown Voltage(Note 4.)( = 2.0 ma,i B=0) V (BR)CEO 50 Vdc 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% Rev. 第 3 頁
4 MUN52DWTH ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted, common for Q and Q 2,) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(Note 5.) DC Current Gain MUN52DWT h FE (V CE = 0 V, = 5.0 ma) MUN522DWT MUN523DWT MUN524DWT MUN525DWT MUN526DWT MUN5230DWT MUN523DWT MUN5232DWT MUN5233DWT MUN5234DWT MUN5235DWT MUN5236DWT MUN5237DWT Collector-Emitter Saturation Voltage (= 0mA,I B= 0.3 ma) V CE(sat) 5 Vdc (= 0mA, I B= 5mA) MUN5230DWT/MUN523DWT (= 0mA, I B= ma) MUN525DWT/MUN526DWT MUN5232DWT/MUN5233DWT/MUN5234DWT Output Voltage (on) V MUN52DWT OL Vdc (V CC = 5.0 V, V B = 2.5 V, R L =.0 kω) MUN522DWT (V CC = 5.0 V, V B = 3.5 V, R L =.0 kω) (V CC = 5.0 V, V B = 5.5 V, R L =.0 kω) (V CC = 5.0 V, V B = 4.0 V, R L =.0 kω) MUN524DWT MUN525DWT MUN526DWT MUN5230DWT MUN523DWT MUN5232DWT MUN5233DWT MUN5234DWT MUN5235DWT MUN523DWT MUN5236DWT MUN5237DWT Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L =.0 kω) V OH 4.9 Vdc (V CC = 5.0 V, V B = 0.05 V, R L =.0 kω) MUN5230DWT (V CC = 5.0 V, V B = 5 V, R L =.0 kω) MUN525DWT MUN526DWT MUN5233DWT 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% Rev. 第 4 頁
5 MUN52xxDWT ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted, common for Q and Q 2,) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(Note 6.) Input Resistor MUN52DWT MUN522DWT MUN523DWT MUN524DWT MUN525DWT MUN526DWT MUN5230DWT MUN523DWT MUN5232DWT MUN5236DWT R kω MUN5237DWT Resistor Ratio MUN52DWT/MUN522DWT R /R 2 MUN523DWT/MUN5236DWT MUN524DWT/MUN525DWT MUN526DWT/MUN5230DWT MUN523DWT/MUN5232DWT MUN5233DWT MUN5234DWT MUN5235DWT MUN5237DWT Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% MUN5233DWT MUN5234DWT MUN5235DWT P D, POWER DISSIPATION (mw) C T A, AMBIENT TEMPERATURE ( C) Figure. Derating Curve Rev. 第 5 頁
6 MUN52xxDWT TYPICAL ELECTRICAL CHARACTERISTICS MUN52DWT V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) C ob CAPACITANCE (pf) Figure 2. V CE(sat) versus V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capacitance, COLLECTOR CURRENT (ma) h FE, DC CURRENT GAIN (NORMALIZED) Figure 3. DC Current Gain Figure 5. Output Current versus Input Voltage , COLLECTOR CURRENT (ma) Figure 6. Input Voltage versus Output Current Rev. 第 6 頁
7 MUN52xxDWT TYPICAL ELECTRICAL CHARACTERISTICS MUN522DWT V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) C ob CAPACITANCE (pf) Figure 7. V CE(sat) versus V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance, COLLECTOR CURRENT (ma) h FE, DC CURRENT GAIN (NORMALIZED) Figure 8. DC Current Gain Figure 0. Output Current versus Input oltage ,COLLECTOR CURRENT (ma) Figure. Input Voltage versus Output Current Rev. 第 7 頁
8 MUN52xxDWT TYPICAL ELECTRICAL CHARACTERISTICS MUN523DWT V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) C ob CAPACITANCE (pf) Figure 2. V CE(sat) versus V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capacitance, COLLECTOR CURRENT (ma) h FE, DC CURRENT GAIN (NORMALIZED) Figure 3. DC Current Gain Figure 5. Output Current versus Input oltage , COLLECTOR CURRENT (ma) Figure 6. Input Voltage versus Output Current Rev. 第 8 頁
9 MUN52xxDWT TYPICAL ELECTRICAL CHARACTERISTICS MUN524DWT V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) C ob CAPACITANCE (pf) Figure 7. V CE(sat) versus V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance, COLLECTOR CURRENT (ma) h FE, DC CURRENT GAIN (NORMALIZED) Figure 8. DC Current Gain Figure 20. Output Current versus Input oltage ,COLLECTOR CURRENT (ma) Figure 2. Input Voltage versus Output Current Rev. 第 9 頁
10 MUN52xxDWT Outline Drawing SOT (0.0)MAX..054(.35).045(.5).030(0.75).02(0.55).056(.40).047(.20).087(2.20).07(.) (0.0)MIN..096(2.45).07(.).00(5).003(0.08).06(0.40).004(0.0).043(.0).032(0.) NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. Dimensions in inches and (millimeters) PIN. EMITTER 2 2. BASE 2 3. COLLECTOR 4.EMITTER 5. BASE 6.COLLECTOR 2 Rev.D Rev. 第 0 頁
11 SOT- Suggested Soldering Pad Layout SOT (0.65).023(0. 60).075(.90).05(0.40) Dimensions in inches and (millimeters) RevB Rev. A 第 頁
12 MUN52xxDWT Device PN Packing Part NumberH () -WS Tape&Reel: 3 Kpcs/Reel Note: () RoHS and Haloge free produc.for.packing.code suffix H. ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures Rev. 第 2 頁
7X = Device Marking. Symbol
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