General Purpose Transistors

Transcription

1 PNP Silicon hese transistors are designed for general purpose amplifier applications. hey are housed in the SO 323 which is designed for low power surface mount applications. Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications SO 323 MAXIMUM RAINGS Rating Symbol B856 B857 B858 Unit ollector Emitter oltage EO ollector Base oltage BO Emitter Base oltage EBO ollector urrent ontinuous I madc 1 BASE 3 OLLEOR 2 EMIER HERMAL HARAERISIS haracteristic Symbol Max Unit otal Device Dissipation FR 5 Board, (1) P D 15 mw A = 25 hermal Resistance, Junction to Ambient R θja 833 /W Junction and Storage emperature J, stg 55 to +15 DEIE MARKING B856AW1 = 3A; B856BW1 = 3B; B857AW1 = 3E; B857BW1 = 3F; B857W1= 3G; B858AW1 = 3J; B858BW1= 3K; B858W1 = 3L ELERIAL HARAERISIS ( A = 25 unless otherwise noted.) OFF HARAERISIS haracteristic Symbol Min yp Max Unit ollector Emitter Breakdown oltage B856 Series 65 (I = 1 ma) B857 Series (BR)EO 45 v 3 ollector Emitter Breakdown oltage B856 Series 8 (I = 1 µa, EB = ) B857 Series (BR)ES 5 v 3 ollector Base Breakdown oltage B856 Series 8 (I = 1 µa) B857 Series (BR)BO 5 v 3 Emitter Base Breakdown oltage B856 Series 5. (I E = µa) B857 Series (BR)EBO 5. v 5. ollector utoff urrent ( B = 3 ) I BO 15 na 1.FR 5= x.75 x.62in ( B = 3, A = 15 ) 4. µa

2 ELERIAL HARAERISIS ( A = 25 unless otherwise noted) (ontinued) ON HARAERISIS haracteristic Symbol Min yp Max Unit D urrent Gain B856A, B857A, B858A h FE 9 (I = 1 µa, E = 5. ) B856B, B857B, B858B 15 B857, B (I = ma, E = 5. ) B856A, B857A, B858A ollector Emitter Saturation oltage (I = 1 ma, I B =.5 ma).3 E(sat) ollector Emitter Saturation oltage (I = 1 ma, I B = 5. ma).65 Base Emitter Saturation oltage (I = 1 ma, I B =.5 ma).7 BE(sat) Base Emitter Saturation oltage (I = 1 ma, I B = 5. ma).9 Base Emitter oltage (I = ma, E = 5. ).6.75 BE(on) Base Emitter oltage (I = 1 ma, E = 5. ).82 SMALL SIGNAL HARAERISIS urrent Gain Bandwidth Product f 1 MHz (I = 1 ma, E = 5. dc, f = 1 MHz) Output apacitance ( B = 1, f = MHz) ob 4.5 pf Noise Figure B856B, B857B, B858B B857, B858, (I = ma, E= 5. dc, R S= kω, f = khz, BW= 2 Hz) ORDERING INFORMAION ( Pb Free ) NF 1 db Device Package Shipping B85xx W1 SO-323 3/ape & Reel

3 B857 / B858 h FE, NORMALIZED D URREN GAIN E = 1 = 25 A, OLAGE (OLS) = 25 I /I =1 BE(sat) = 1 BE(on) I /I = 1 E(sat) B I, OLLEOR URREN (madc) Figure 1. Normalized D urrent Gain I, OLLEOR URREN (madc) Figure 2. Saturation and On oltages E, OLLEOR EMIER OLAGE () I = 1 ma I = 2 ma I = 5 ma A = 25 I = 2 ma I = 1 ma θ B, EMPERAURE OEFFIIEN (m/ ) to I, BASE URREN (ma) B Figure 3. ollector Saturation Region I, OLLEOR URREN (ma) Figure 4. Base Emitter emperature oefficient 1. 4, APAIANE(pF) ib ob =25 A 2 = 1 E f, URREN GAIN BANDWIDH PRODU (MHz) A = , REERSE OLAGE (OLS) R Figure 5. apacitances I, OLLEOR URREN (madc) Figure 6. urrent Gain Bandwidth Product

4 B856 h FE, D URREN GAIN (NORMALIZED), OLLEOR EMIER OLAGE (OLS) E I = E = 5. A = 25 1mA I, OLLEOR URREN (ma) Figure 7. D urrent Gain 2mA 1mA I, BASE URREN (ma) B Figure 9. ollector Saturation Region 2mA J = θ B, EMPERAURE OEFFIIEN (m/ ), OLAGE (OLS) J = 25 I /I B =1 E = 5. I /I B = mA I, OLLEOR URREN (ma) Figure 8. On oltage θ B for BE 55 to I, OLLEOR URREN (ma) Figure 1. Base Emitter emperature oefficient, APAIANE (pf) 4 = 25 J 2 ib ob f, URREN GAIN BANDWIDH PRODU E = , REERSE OLAGE (OLS) R Figure 11. apacitance I, OLLEOR URREN (ma) Figure 12. urrent Gain Bandwidth Product

5 I, OLLEOR URREN (ma) r( t), RANSIEN HERMAL RESISANE (NORMALIZED) D= SINGLE PULSE SINGLE PULSE A = 25 J = 25 E, OLLEOR EMIER OLAGE () Figure 14. Active Region Safe Operating Area 1s P (pk) t, IME (ms) t 1 t 2 Figure 13. hermal Response 3 ms Z θj (t) = r(t) R θj R θj = 83.3 /W MAX Z θja (t) = r(t) R θja R θja = 2 /W MAX D URES APPLY FOR POWER PULSE RAIN SHOWN READ IME A t 1 J(pk) = P (pk) R θj (t).3.2 DUY YLE, D = t /t k k 5.k 1k B558 1 B557 B BONDING WIRE LIMI HERMAL LIMI SEOND BREAKDOWN LIMI he safe operating area curves indicate I E limits of the transistor that must be observed for reliable operation. ollector load lines for specific circuits must fall below the limits indicated by the applicable curve. he data of Figure 14 is based upon = 15 ; or J(pk) A is variable depending upon conditions. Pulse curves are valid for duty cycles to 1% provided < 15. may be calculated from the data in Figure 13. At high case or ambient J(pk) J(pk) temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.

6 SO (1.35).45(1.15).87(2.2).7(1.8).96(2.45).78().4(.1)MIN..56(1.4).47(1.2).1(5).3(.8).4(.1)MAX..16(.4).8().43(1.1).32(.8) Dimensions in inches and (millimeters)

7 Ordering Information: Device PN Packing Part Number G (1) WS ape&reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix G ;Halogen free product for packing code suffix H ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "ypical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life saving implant or other applications intended for life sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. ustomers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures.