COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558

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1 SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 5. dc Collector Current Continuous IC madc Total Device Derate above 25 C PD mw mw/ C 2 3 CASE 29 4, STYLE 7 TO 92 (TO 226AA) Total Device TC = 25 C Derate above 25 C PD.5 2 Watt mw/ C Operating and Storage Junction Temperature Range TJ, Tstg 55 to +5 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA 2 C/W Thermal Resistance, Junction to Case R JC 83.3 C/W ELECTRICAL CHARACTERISTICS ( unless otherwise noted) OFF CHARACTERISTICS Collector Emitter Breakdown oltage (IC = madc, IB = ) Collector Base Breakdown oltage (IC = µadc) Emitter Base Breakdown oltage (IE = Adc, IC = ) Collector Emitter Leakage Current (CES = 4 ) (CES = 2 ) (CES = 2, TA = 25 C) Characteristic Symbol Min Typ Max Unit (BR)CEO (BR)CBO (BR)EBO ICES na µa Motorola Small Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 996

2 ELECTRICAL CHARACTERISTICS ( unless otherwise noted) (Continued) ON CHARACTERISTICS DC Current Gain (IC = µadc, CE = 5. ) (IC = madc, CE = 5. ) (IC = madc, CE = 5. ) Collector Emitter Saturation oltage (IC = madc, IB =.5 madc) (IC = madc, IB = see Note ) (IC = madc, IB = 5. madc) Base Emitter Saturation oltage (IC = madc, IB =.5 madc) (IC = madc, IB = 5. madc) Base Emitter On oltage (IC = madc, CE = 5. dc) (IC = madc, CE = 5. dc) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (IC = ma, CE = 5., f = MHz) Output Capacitance (CB =, IC =, f = MHz) Characteristic Symbol Min Typ Max Unit A B/557B/558B C A B/557B/558B C A B/557B/558B C hfe CE(sat) BE(sat) BE(on) ft MHz Cob pf Noise Figure (IC = madc, CE = 5., RS = k, f = khz, f = 2 Hz) NF db Small Signal Current Gain (IC = madc, CE = 5., f = khz) /558 A B/557B/558B C hfe Note : IC = madc on the constant base current characteristics, which yields the point IC = madc, CE =. 2 Motorola Small Signal Transistors, FETs and Diodes Device Data

3 / hfe, NORMALIZED DC CURRENT GAIN CE = IC, COLLECTOR CURRENT (madc), OLTAGE (OLTS) IC/IB = CE = IC/IB = IC, COLLECTOR CURRENT (madc) Figure. Normalized DC Current Gain Figure 2. Saturation and On oltages CE, COLLECTOR EMITTER OLTAGE ().6.2 IC = ma IC = 2 ma IC = 5 ma.2. IB, BASE CURRENT (ma) IC = 2 ma IC = ma 2 B, TEMPERATURE COEFFICIENT (m/ C) θ C to +25 C Figure 3. Collector Saturation Region Figure 4. Base Emitter Temperature Coefficient C, CAPACITANCE (pf) Cib Cob R, REERSE OLTAGE (OLTS) f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) IC, COLLECTOR CURRENT (madc) CE = Figure 5. Capacitances Figure 6. Current Gain Bandwidth Product Motorola Small Signal Transistors, FETs and Diodes Device Data 3

4 hfe, DC CURRENT GAIN (NORMALIZED).5 CE = 5., OLTAGE (OLTS).6 IC/IB = CE = 5. IC/IB = IC, COLLECTOR CURRENT (AMP) Figure 7. DC Current Gain Figure 8. On oltage CE, COLLECTOR EMITTER OLTAGE (OLTS).6.2 IC = ma 2 ma 5 ma ma 2 ma IB, BASE CURRENT (ma) 2 B, TEMPERATURE COEFFICIENT (m/ C) θ.4.8 θb for BE 55 C to 25 C Figure 9. Collector Saturation Region Figure. Base Emitter Temperature Coefficient C, CAPACITANCE (pf) 4 2 Cib Cob R, REERSE OLTAGE (OLTS) f T, CURRENT GAIN BANDWIDTH PRODUCT CE = 5. Figure. Capacitance Figure 2. Current Gain Bandwidth Product 4 Motorola Small Signal Transistors, FETs and Diodes Device Data

5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D =.5..5 SINGLE PULSE SINGLE PULSE.5 5. P(pk) k k 5. k k t, TIME (ms) t t2 DUTY CYCLE, D = t/t2 ZθJC(t) = (t) RθJC RθJC = 83.3 C/W MAX ZθJA(t) = r(t) RθJA RθJA = 2 C/W MAX D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) RθJC(t) Figure 3. Thermal Response s BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 3 ms CE, COLLECTOR EMITTER OLTAGE () The safe operating area curves indicate IC CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 4 is based upon TJ(pk) = 5 C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to % provided TJ(pk) 5 C. TJ(pk) may be calculated from the data in Figure 3. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. Figure 4. Active Region Safe Operating Area Motorola Small Signal Transistors, FETs and Diodes Device Data 5

6 PACKAGE DIMENSIONS SEATING PLANE R A X X H N F G P N B L K C D J SECTION X X NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K. 2.7 L N P R CASE 29 4 (TO 226AA) ISSUE AD STYLE 7: PIN. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 292; Phoenix, Arizona F Seibu Butsuryu Center, Tatsumi Koto Ku, Tokyo 35, Japan MFAX: RMFAX@ .sps.mot.com TOUCHTONE (62) HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: NET.com 5 Ting Kok Road, Tai Po, N.T., Hong Kong Motorola Small Signal Transistors, FETs and Diodes Device Data /D