TO-92 SOT-23 Mark: 83. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

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George Brooks
5 years ago
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1 2N44 MMBT44 2N44 / MMBT44 B E TO-92 SOT-23 Mark: 83 B E This device is designed for use as general purpose amplifiers and switches requiring collector currents to 5 ma. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter Value Units V EO ollector-emitter Voltage 4 V V BO ollector-base Voltage 6 V V EBO Emitter-Base Voltage 6. V I ollector urrent - ontinuous 6 ma T J, T stg Operating and Storage Junction Temperature Range -55 to +5 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: ) These ratings are based on a maximum junction temperature of 5 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal haracteristics TA = 25 unless otherwise noted Symbol haracteristic Max Units 2N44 *MMBT44 P D Total Device Dissipation Derate above mw mw/ R θj Thermal Resistance, Junction to ase 83.3 /W R θja Thermal Resistance, Junction to Ambient /W 2 Fairchild Semiconductor orporation 2N44/MMBT44, Rev A

2 Electrical haracteristics OFF HARATERISTIS TA = 25 unless otherwise noted Symbol Parameter Test onditions Min Max Units V (BR)EO ollector-emitter Breakdown Voltage* I =. ma, I B = 4 V V (BR)BO ollector-base Breakdown Voltage I = µa, I E = 6 V V (BR)EBO Emitter-Base Breakdown Voltage I E = µa, I = 6. V I EX ollector utoff urrent V E = 35 V, V EB =.4 V. µa I BL Emitter utoff urrent V E = 35 V, V EB =.4 V. µa 2N44 / MMBT44 ON HARATERISTIS* h FE D urrent Gain V E =. V, I =. ma V E =. V, I = ma V E =. V, I = 5 ma V E = 2. V, I = 5 ma V E(sat) ollector-emitter Saturation Voltage I = 5 ma, I B =5 ma I = 5 ma, I B = 5 ma V BE(sat) Base-Emitter Saturation Voltage I = 5 ma, I B =5 ma I = 5 ma, I B = 5 ma V V V V SMALL SIGNAL HARATERISTIS ob Output apacitance V B = 5. V, f = 4 khz 6.5 pf ib Input apacitance V EB =.5 V, f = 4 khz 3 pf h fe Small-Signal urrent Gain I = 2 ma, V E = V, 2. f = MHz h fe Small-Signal urrent Gain V E = V, I =. ma, 2 25 h ie Input Impedance f =. khz KΩ h re Voltage Feedback Ratio. 8. x -4 h oe Output Admittance. 3 µmhos SWITHING HARATERISTIS t d Delay Time V = 3 V, I = 5 ma, 5 ns t r Rise Time I B = 5 ma,v EB = 2 V 2 ns t s Storage Time V = 3 V, I = 5 ma 225 ns t f Fall Time I B = I B2 = 5 ma 3 ns *Pulse Test: Pulse Width 3 ms, Duty ycle 2.%

3 Typical haracteristics h - TYPIAL PULSED URRENT GAIN FE Typical Pulsed urrent Gain vs ollector urrent I - OLLETOR URRENT (ma) V = 5V E V - OLLETOR-EMITTER VOLTAGE (V) ESAT ollector-emitter Saturation Voltage vs ollector urrent β = 25 5 I - OLLETOR URRENT (ma) N44 / MMBT44 V - BASE-EMITTER VOLTAGE (V) BESAT Base-Emitter Saturation Voltage vs ollector urrent β = I - OLLETOR URRENT (ma) V - BASE-EMITTER ON VOLTAGE (V) BE (ON) Base-Emitter ON Voltage vs ollector urrent V E = 5V I - OLLETOR URRENT (ma) I - OLLETOR URRENT (na) BO 5. ollector-utoff urrent vs Ambient Temperature V = 4V B T - AMBIENT TEMPERATURE ( ) A APAITANE (pf) Emitter Transition and Output apacitance vs Reverse Bias Voltage ob te f = MHz. REVERSE BIAS VOLTAGE (V)

4 Typical haracteristics TIME (ns) Turn On and Turn Off Times vs ollector urrent I c I B= I B2= V cc = 25 V t on t off I - OLLETOR URRENT (ma) TIME (ns) Switching Times vs ollector urrent I c I B= I B2= V cc = 25 V t f t r t s t d I - OLLETOR URRENT (ma) 2N44 / MMBT44 Power Dissipation vs Ambient Temperature P - POWER DISSIPATION (W) D TO-92 SOT-23 SOT o TEMPERATURE ( )

5 Typical ommon Emitter haracteristics (f =.khz) HAR. RELATIVE TO VALUES AT I = ma ommon Emitter haracteristics 8 V E = V o T A = 25 h ie I - OLLETOR URRENT (ma) h oe h re h fe HAR. RELATIVE TO VALUES AT T = 25 o A ommon Emitter haracteristics V E = V I = ma T - AMBIENT TEMPERATURE ( o ) A h re h ie hfe h oe 2N44 / MMBT44 HAR. RELATIVE TO VALUES AT V = V E ommon Emitter haracteristics V - OLLETOR VOLTAGE (V) E I = ma o T A = 25 h fe h ie h re h oe

6 Test ircuits 6 V 3 V 2 Ω. KΩ 2N44 / MMBT44 2ns 5 Ω FIGURE : Saturated Turn-On Switching Timer -.5 V 6. V NOTE: BV = 5. V EBO k 37 Ω 3 V. KΩ 2ns 5 Ω FIGURE 2: Saturated Turn-Off Switching Time

TO-92 SOT-23 Mark: 3G. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TO-92 SOT-23 Mark: 3G. TA = 25 C unless otherwise noted. Symbol Parameter Value Units MPSH MMBTH MPSH / MMBTH E B TO-92 SOT-2 Mark: G B E This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the µa to ma range to MHz, and low frequency