List... Package outline... Features Mechanical data... Maximum ratings... Electrical Characteristics... Rating and characteristic curves...
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1 SMD NPN Transistr / Frmsa MS List List... Package utline... 2 Features... 2 Mechanical data... Maximum ratings... Electrical haracteristics... Rating and characteristic curves ~4 5~6 Pinning infrmatin... 7 Marking... Suggested slder pad layut Packing infrmatin... 8 Reel packing... 9 Suggested thermal prfiles fr sldering prcesses Page Dcument ID Issued Date Revised Date Revisin Page.
2 SMD NPN Transistr / Frmsa MS General Purpse Transistr NPN Silicn Features High cllectr-emitterbreakdien vltage. (BV EO = 40V@I =0mA) Small lad switch transistr with high gain and lw stauratin vltage, is designed fr general purpse amflifier and switching applicatins at cllectr current. apable f 225mW pwer dissipatin. Lead-free parts fr green partner, exceeds envirnmental standards f MIL-STD-9500 /228 Suffix "-H" indicates Halgen-free part, ex.-h. Package utline 20 (3.04) 0 (2.80).084(2.0).068(.70) (.5) SOT (0.85) (B) (A) () (0.50) 0.02 (0.30) Mechanical data Epxy:UL94-V0 rated flame retardant ase : Mlded plastic, SOT-23 Terminals : Slder plated, slderable per MIL-STD-750, Methd 2026 Munting Psitin : Any Weight : Apprximated gram (.60) (.20) 08 (2.75) (2.0) 0.05 (.30) (0.89) (0.67) 0.03 (0.32) (8) (0.09) Dimensins in inches and (millimeters) Maximum ratings (AT T A=25 unless therwise nted) PARAMETER llectr-base vltage llectr-emitter vltage Emitter-base vltage llectr current Ttal device dissipatin FR-5 bard () Thermal resistance() Ttal device dissipatin alumina substrate(2) O T A = 25 Derate abve 25 O ONDITIONS Symbl V BO V EO V EBO I P D T J T STG UNIT V V V ma mw mw/ O Junctin t ambient R θja 556 O/W O T A = 25 Derate abve 25 O Thermal resistance(2) Junctin t ambient R θja 47 O/W Operating junctin temperature range -55 t +50 Strage temperature range -55 t +50.FR-5 =.0 X 0.75 X0.062 in. 2.Alumina = 0.4 X 0.3 X in. 99.5% alumina. P D mw mw/ O Page 2 Dcument ID Issued Date Revised Date Revisin Page.
3 SMD NPN Transistr / Frmsa MS ELETRIAL HARATERISTIS (TA = 25 unless therwise nted) OFF HARATERISTIS ELETRIAL HARATERISTIS (T A = 25 unless therwise nted) (ntinued) ON HARATERISTIS ONLY Page 3 Dcument ID Issued Date Revised Date Revisin Page.
4 SMD NPN Transistr / Frmsa MS ELETRIAL HARATERISTIS (T A = 25 unless therwise nted) (ntinued) SMALL SIGNAL HARATERISTIS κω μ (I =00μAdc, V E=0Vdc, RS=.0k Ω, f=.0 khz) SWITHING HARATERISTIS( nly) 3.Pulse Test:Pulse Width 300 μs, Duty ycle 2.0%. 4.f is defined as the frequency at which Ihfe extraplates t unity. T Page 4 Dcument ID Issued Date Revised Date Revisin Page.
5 SMD NPN Transistr Frmsa MS Rating and characteristic curves ( / ) h FE -TYPIAL PULSED URRENT GAIN Typical Pulsed urrent Gain vs llectr urrent V E= 5V I c - OLLETOR URRENT ( ma) VESAT OLLETOR-EMITTER VOLTAGE (V) llectr - Emitter Saturatin Vltage vs llectr urrent b= Ic- OLLETOR URRENT ( ma) V BESAT BASE-EMITTER VOLTAGE (V) b= 0 Base -Emitter Saturatin Vltage vs llectr urrent Ic- OLLETOR URRENT ( ma) ( ) BASE-EMITTER ON VOLTAGE (V) V BE ON V E= 5V Base -Emitter ON Vltage vs llectr urrent Ic- OLLETOR URRENT ( ma) I BO OLLETOR URRENT (na) VB=40V 0llectr -utff urrent vs Ambient Temperature TA- AMBIENT TEMPERATURE ( ) APAITANE ( pf ) Emitter Transitin and Output apacitance vs Reverse Bias Vltage b ib f= MHz REVERSE BIAS VOLTAGE ( V) Page 5 Dcument ID Issued Date Revised Date Revisin Page.
6 SMD NPN Transistr Frmsa MS Rating and characteristic curves ( / ) TIME ( ns ) I B =IB2= Turn On and Turn Off Times vs llectr urrent V cc =25V c 0 t OFF TIME ( ns ) I B =IB2= Vcc= 25V t f c 0 t r Switching Times vs llectr urrent t s t ON Ic- OLLETOR URRENT ( ma) t d Ic- OLLETOR URRENT ( ma) Pwer Dissipatin vs Ambient Temperature PD- POWER DISSIPATION ( W ) SOT TEMPERATURE ( ) Page 6 Dcument ID Issued Date Revised Date Revisin Page.
7 SMD NPN Transistr / Frmsa MS Pinning infrmatin PinB Pin PinE Pin Simplified utline Symbl Base llectr Emitter B B E E Marking Type number Marking cde MB P Suggested slder pad layut SOT (0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.03(0.80) Dimensins in inches and (millimeters) Page 7 Dcument ID Issued Date Revised Date Revisin Page.
8 SMD NPN Transistr / Frmsa MS Packing infrmatin P0 d P E F B W A P D2 D T D W unit:mm Item Symbl Tlerance SOT-23 arrier width arrier length arrier depth Sprcket hle 3" Reel utside diameter A B d D " Reel inner diameter 7" Reel utside diameter 7" Reel inner diameter Feed hle diameter Sprcket hle psitin Punch hle psitin Punch hle pitch Sprcket hle pitch Embssment center Overall tape thickness Tape width Reel width D D D D2 E F P P0 P T W W min 2.0 min Nte:Devices are packed in accr dance with EIA standar RS-48-A and specificatins listed abve. Page 8 Dcument ID Issued Date Revised Date Revisin Page.
9 SMD NPN Transistr / Frmsa MS Reel packing PAKAGE REEL SIZE REEL (pcs) OMPONENT SPAING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) ARTON SIZE (m/m) ARTON (pcs) APPROX. GROSS WEIGHT (kg) SOT-23 7" 3, ,000 83*23* *257* ,000.6 Suggested thermal prfiles fr sldering prcesses.strage envirnment: Temperature=5 ~40 Humidity=55%±25% 2.Reflw sldering f surface-munt devices TP Tp ritical Zne TL t TP Ramp-up TL Tsmax TL Tsmin Temperature ts Preheat Ramp-dwn 25 t25 t Peak Time 3.Reflw sldering Prfile Feature Sldering nditin Average ramp-up rate(tl t T P) <3 /sec Preheat -Temperature Min(Tsmin) 50 -Temperature Max(Tsmax) 200 -Time(min t max)(t s) 60~20sec Tsmax t TL -Ramp-upRate <3 /sec Time maintained abve: -Temperature(T L) 27 -Time(t L) 60~260sec Peak Temperature(T P) 255-0/ + 5 Time within 5 f actual Peak Temperature(t P) 0~30sec Ramp-dwn Rate <6 /sec Time 25 t Peak Temperature <6minutes Page 9 Dcument ID Issued Date Revised Date Revisin Page.
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