BCW68G PNP General-Purpose Amplifier

Transcription

1 BW68G PNP General-Purpse Amplifier Descriptin This device is designed fr general-purpse amplifier and switching applicatins at currents t 5 ma. Surced frm prcess 63. SOT-23 Mark: DG B E BW68G PNP General-Purpse Amplifier Ordering Infrmatin Part Number Marking Package Packing Methd BW68G DG SOT-23 3L Tape and Reel Abslute Maximum Ratings (),(2) Stresses exceeding the abslute maximum ratings may damage the device. The device may nt functin r be perable abve the recmmended perating cnditins and stressing the parts t these levels is nt recmmended. In additin, extended expsure t stresses abve the recmmended perating cnditins may affect device reliability. The abslute maximum ratings are stress ratings nly. Values are at T A = 25 unless therwise nted. Symbl Parameter Value Unit V EO llectr-emitter Vltage -45 V V BO llectr-base Vltage -6 V V EBO Emitter-Base Vltage -5 V I llectr urrent - ntinuus -8 ma T J, T STG Junctin and Strage Temperature Range -55 t +5 Ntes:. These ratings are based n a maximum junctin temperature f These are steady-state limits. ON Semicnductr shuld be cnsulted n applicatins invlving pulsed r lwduty-cycle peratins. 997 Semicnductr mpnents Industries, LL. September-27, Rev. 2 Publicatin Order Number: BW68G/D

2 Thermal haracteristics (3) Values are at T A = 25 unless therwise nted. Symbl Parameter Max. Unit Ttal Device Dissipatin 35 mw P D Derate Abve T A = mw/ R θja Thermal Resistance, Junctin t Ambient 357 /W Nte: 3. Device munted n FR-4 PB 4 mm X 4 mm X.5 mm. Electrical haracteristics Values are at T A = 25 unless therwise nted. Symbl Parameter nditins Min. Max. Unit V (BR)EO llectr-emitter Breakdwn Vltage I = - ma, I B = -45 V V (BR)ES llectr-emitter Breakdwn Vltage I = - μa -6 V V (BR)BO llectr-base Breakdwn Vltage I = - μa, I E = -6 V V (BR)EBO Emitter-Base Breakdwn Vltage I E = - μa, I = -5. V I ES llectr ut-off urrent V E = -45 V -2 na V E = -45V, T A = 5 - μa I EBO Emitter ut-off urrent V EB = -4. V -2 na I = - ma, V E = -. V 2 h FE D urrent Gain I = - ma, V E = -. V 6 4 I = -3 ma, V E = -. V 6 V E (sat) llectr-emitter Saturatin Vltage I = -3 ma, I B = -3 ma -.5 V V BE (sat) Base-Emitter Saturatin Vltage I = -5 ma, I B = -5 ma -2. V I f T urrent Gain - Bandwidth Prduct = -2 ma, V E = - V, f = MHz MHz V b Output apacitance B = - V, I E =, f =. MHz 8 pf V ib Input apacitance EB = -.5 V, I =, f =. MHz 5 pf I = -.2 ma, V E = -5. V, NF Nise Figure R S =. kω, f =. khz, B W = Hz db BW68G PNP General-Purpse Amplifier 2

3 Typical Perfrmance haracteristics h - TYPIAL PULSED URRENT GAIN FE V - BASE EMITTER VOLTAGE (V) BESAT I - OLLETOR URRENT (ma) V E = 5V Figure. Typical Pulsed urrent Gain vs. llectr urrent I - OLLETOR URRENT (ma) β = V - OLLETOR EMITTER VOLTAGE (V) ESAT β = 5 I - OLLETOR URRENT (ma) Figure 2. llectr-emitter Saturatin Vltage vs. llectr urrent V - BASE EMITTER ON VOLTAGE (V) BE( ON) I - OLLETOR URRENT (ma) V E = 5V BW68G PNP General-Purpse Amplifier Figure 3. Base-Emitter Saturatin Vltage vs. llectr urrent Figure 4. Base-Emitter On Vltage vs. llectr urrent I - OLLETOR URRENT (na) BO. V B = 35V T A- AMBIENT TEMPERATURE ( ) Figure 5. llectr ut-off urrent vs. Ambient Temperature APAITANE (pf) b ib. 5 REVERSE BIAS VOLTAGE (V) Figure 6. Input and Output apacitance vs. Reverse Bias Vltage 3

4 Typical Perfrmance haracteristics (ntinued) TIME (ns) I c I B= I B2= V cc = 5 V t d t r t f I - OLLETOR URRENT (ma) Figure 7. Switching Times vs. llectr urrent t s TIME (ns) I c I B= I B2= V cc = 5 V t n t ff I - OLLETOR URRENT (ma) Figure 8. Turn-On and Turn-Off Times vs. llectr urrent BW68G PNP General-Purpse Amplifier I - TURN N BASE URRENT (ma) B t r = 5 V 3 ns 6 ns 5 I - OLLETOR URRENT (ma) Figure 9. Rise Time vs. Turn-On Base urrent P - POWER DISSIPATION (mw) D SOT TEMPERATURE ( ) Figure. Pwer Dissipatin vs. Ambient Temperature 4

5 Typical Perfrmance haracteristics (ntinued, f =. khz) HAR. RELATIVE TO VALUES AT I = -ma HAR. RELATIVE TO VALUES AT T = 25 A V E = - V T A = I - OLLETOR URRENT (ma) V E- OLLETOR VOLTAGE (V) h e Figure. mmn Emitter haracteristics I = -ma V E = - V h e T - AMBIENT TEMPERATURE ( ) A h e HAR. RELATIVE TO VALUES AT V = -V E and he he I = -ma T A = 25 Figure 2. mmn Emitter haracteristics BW68G PNP General-Purpse Amplifier Figure 3. mmn Emitter haracteristics 5

6 Physical Dimensins (.29) 2.92± SOT A B BW68G PNP General-Purpse Amplifier LAND PATTERN REOMMENDATION.2 MAX SEE DETAIL A (.93) ±.3 GAGE PLANE MIN (.55).25 SEATING PLANE NOTES: UNLESS OTHERWISE SPEIFIED A) REFERENE JEDE REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. ) DIMENSIONS ARE INLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANING PER ASME Y4.5M E) DRAWING FILE NAME: MA3DREV SALE: 2X Figure 4. 3-LEAD, SOT23, JEDE TO-236, LOW PROFILE (ATIVE) Package drawings are prvided as a service t custmers cnsidering ON Semicnductr cmpnents. Drawings may change in any manner withut ntice. Please nte the revisin and/r date n the drawing and cntact a ON Semicnductr representative t verify r btain the mst recent revisin. Package specificatins d nt expand the terms f ON Semicnductr's wrldwide terms and cnditins, specifically the warranty therein, which cvers ON Semicnductr prducts. 6

7 ON Semicnductr and are trademarks f Semicnductr mpnents Industries, LL dba ON Semicnductr r its subsidiaries in the United States and/r ther cuntries. ON Semicnductr wns the rights t a number f patents, trademarks, cpyrights, trade secrets, and ther intellectual prperty. A listing f ON Semicnductr s prduct/patent cverage may be accessed at /site/pdf/patent Marking.pdf. ON Semicnductr reserves the right t make changes withut further ntice t any prducts herein. ON Semicnductr makes n warranty, representatin r guarantee regarding the suitability f its prducts fr any particular purpse, nr des ON Semicnductr assume any liability arising ut f the applicatin r use f any prduct r circuit, and specifically disclaims any and all liability, including withut limitatin special, cnsequential r incidental damages. Buyer is respnsible fr its prducts and applicatins using ON Semicnductr prducts, including cmpliance with all laws, regulatins and safety requirements r standards, regardless f any supprt r applicatins infrmatin prvided by ON Semicnductr. Typical parameters which may be prvided in ON Semicnductr data sheets and/r specificatins can and d vary in different applicatins and actual perfrmance may vary ver time. All perating parameters, including Typicals must be validated fr each custmer applicatin by custmer s technical experts. ON Semicnductr des nt cnvey any license under its patent rights nr the rights f thers. ON Semicnductr prducts are nt designed, intended, r authrized fr use as a critical cmpnent in life supprt systems r any FDA lass 3 medical devices r medical devices with a same r similar classificatin in a freign jurisdictin r any devices intended fr implantatin in the human bdy. Shuld Buyer purchase r use ON Semicnductr prducts fr any such unintended r unauthrized applicatin, Buyer shall indemnify and hld ON Semicnductr and its fficers, emplyees, subsidiaries, affiliates, and distributrs harmless against all claims, csts, damages, and expenses, and reasnable attrney fees arising ut f, directly r indirectly, any claim f persnal injury r death assciated with such unintended r unauthrized use, even if such claim alleges that ON Semicnductr was negligent regarding the design r manufacture f the part. ON Semicnductr is an Equal Opprtunity/Affirmative Actin Emplyer. This literature is subject t all applicable cpyright laws and is nt fr resale in any manner. PUBLIATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distributin enter fr ON Semicnductr 952 E. 32nd Pkwy, Aurra, lrad 8 USA Phne: r Tll Free USA/anada Fax: r Tll Free USA/anada rderlit@nsemi.cm Semicnductr mpnents Industries, LL N. American Technical Supprt: Tll Free USA/anada Eurpe, Middle East and Africa Technical Supprt: Phne: Japan ustmer Fcus enter Phne: ON Semicnductr Website: Order Literature: Fr additinal infrmatin, please cntact yur lcal Sales Representative