L21. Part Number Top Mark Package Packing Method
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1 BAS1 Small Signal Diode BAS1 Small Signal Diode 1 SOT-2 2 L Connection Diagram 1 2 Ordering Information Part Number Top Mark Package Packing Method BAS1 L21 SOT-2 L Tape and eel, 7 inch eel, 000 pcs BAS1-D87Z L21 SOT-2 L Tape and eel, 1 inch eel, pcs (1), (2) Absolute Maximum atings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25 C unless otherwise noted. Symbol Parameter Value Unit V M Maximum epetitive everse Voltage 120 V I (AV) Average ectified orward Current 200 ma I SM Non-epetitive Peak orward Pulse Width = 1.0 second 1.0 Surge Current Pulse Width = 1.0 microsecond 2.0 A T STG Storage Temperature ange -55 to +150 C T J Operating Junction Temperature 150 C Notes: 1. These ratings are based on a maximum junction temperature of 150 C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations Semiconductor Components Industries, LLC. August-2017, ev. 2 Publication Order Number: BAS1/D
2 Thermal Characteristics Values are at T A = 25 C unless otherwise noted. Symbol Parameter Value Unit P D Power Dissipation 50 mw θja Thermal esistance, Junction-to-Ambient 57 C/W Electrical Characteristics Values are at T A = 25 C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit V Breakdown Voltage I = 1.0 ma 120 V V I orward Voltage everse Current I = 10 ma 750 mv I = 50 ma 840 mv I = 100 ma 900 mv I = 200 ma 1.00 V I = ma 1.25 V V = 90 V 100 na V = 90 V, T A = 150 C 100 μa C T Total Capacitance V = 0, f = 1.0 MHz 5 p t rr everse ecovery Time I = I = 0 ma, I =.0 ma, L = 100 Ω 50 ns BAS1 Small Signal Diode 2
3 Typical Performance Characteristics V - EVESE VOLTAGE (V) I - EVESE CUENT (ua) igure 1. everse Voltage vs. everse Current BV to 100 μa I - EVESE CUENT (na) V - EVESE VOLTAGE (V) GENEAL ULE: The everse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature igure 2. everse Current vs. everse Voltage I - 55 to 205 V BAS1 Small Signal Diode I - EVESE CUENT (na) V - EVESE VOLTAGE (V) GENEAL ULE: The everse Current of a diode will approximately double for every ten Degree C increase in Temperature 255 V - OWAD VOLTAGE (mv) V I - OWAD CUENT (ua) igure. everse Current vs. everse Voltage I to 255 V igure 4. orward Voltage vs. orward Current V to 100 μa V - OWAD VOLTAGE (mv) I - OWAD CUENT (ma) V - OWAD VOLTAGE (mv) I - OWAD CUENT (ma) 800 igure 5. orward Voltage vs. orward Current V to 10 ma igure 6. orward Voltage vs. orward Current V - 10 to 800 ma
4 Typical Performance Characteristics (Continued) V - OWAD VOLTAGE (mv) V Ta= -40 C Ta= +80 C I - OWAD CUENT (ma) CAPACITANCE (p) EVESE VOLTAGE (V) 15 BAS1 Small Signal Diode igure 7. orward Voltage vs. Ambient Temperature V μa - 10 ma (- 40 to +80 C) igure 8. Capacitance vs. everse Voltage EVESE ECOVEY (ns) I = I = 0 ma loop = 100 Ohms Irr - EVESE ECOVEY CUENT (ma) igure 9. everse ecovery Time vs. everse ecovery Current (Irr) I - CUENT (ma) I - OWAD CUENT STEADY STATE - ma Io - AVEAGE ECTIIED CUENT - ma o T A - AMBIENT TEMPEATUE ( C) igure 10. Average ectified Current(I O ) and orward Current (I ) vs. Ambient Temperature(T A ) P - POWE DISSIPATION (mw) D SOT-2 Pkg o I O - AVEAGE TEMPEATUE ( C) igure 11. Power Derating Curve 4
5 Physical Dimensions 2.92± BAS1 Small Signal Diode (0.29) A B LAND PATTEN ECOMMENDATION 1.20 MAX SEE DETAIL A C (0.9) C 2.40±0.0 GAGE PLANE MIN (0.55) 0.25 SEATING PLANE NOTES: UNLESS OTHEWISE SPECIIED A) EEENCE JEDEC EGISTATION TO-26, VAIATION AB, ISSUE H. B) ALL DIMENSIONS AE IN MILLIMETES. C) DIMENSIONS AE INCLUSIVE O BUS, MOLD LASH AND TIE BA EXTUSIONS. D) DIMENSIONING AND TOLEANCING PE ASME Y14.5M E) DAWING ILE NAME: MA0DEV10 SCALE: 2X igure 12. -LEAD, SOT2, JEDEC TO-26, LOW POILE 5
6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any DA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ODEING INOMATION LITEATUE ULILLMENT: Literature Distribution Center for ON Semiconductor E. 2nd Pkwy, Aurora, Colorado USA Phone: or Toll ree USA/Canada ax: or Toll ree USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll ree USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer ocus Center Phone: ON Semiconductor Website: Order Literature: or additional information, please contact your local Sales epresentative
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74HC14 Hex Schmitt Inverter Features High Speed: t PD = 5.5 ns (Typ.) at CC = 5 Low Power Dissipation: I CC = 2 μa (Max.) at T A = 25 C High Noise Immunity: NIH = NIL = 28% CC (Min.) Power down protection
More informationDescription. - Derate above 25 C 0.39 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C
FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V,.8 A,.5 Ω Features.8 A, 600 V, R DS(on) =.5 Ω (Max.) @ = 10 V, = 1.4 A Low Gate Charge ( Typ. 15 nc) Low Crss (Typ. 6.5 pf) 100% Avalanche Tested RoHS compliant
More informationNVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
More informationKSH122 / KSH122I NPN Silicon Darlington Transistor
KSH22 / KSH22I NPN Silicon Darlington Transistor Features D-PAK for Surface Mount Applications High DC Current Gain Built-in Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight
More informationNVC6S5A444NLZ. Power MOSFET. 60 V, 78 m, 4.5 A, N Channel
Power MOSFET 6 V, 78 m,.5 A, N Channel Automotive Power MOSFET designed to minimize gate charge and low on resistance. AEC Q qualified MOSFET and PPAP capable suitable for automotive applications. Features.5
More informationNC7S00 TinyLogic HS 2-Input NAND Gate
NC7S00 TinyLogic HS 2-Input NAND Gate General Description The NC7S00 is a single 2-Input high performance CMOS NAND Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit
More informationNDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NS3N N-Channel Logic Level Enhancement Mode Field Effect Transistor General escription These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's
More informationN-Channel SuperFET MOSFET
FCD5N-F5 N-Channel SuperFET MOSFET V,. A,. Ω Features V,.A, typ. R ds(on) =mω@v GS =V Ultra Low Gate Charge (Typ. Q g = nc) UIS Capability RoHS Compliant Qualified to AEC Q Applications Automotive On Board
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
More informationFDH50N50 / FDA50N50 N-Channel UniFET TM MOSFET 500 V, 48 A, 105 mω Features
FDH5N5 / FDA5N5 N-Channel UniFET TM MOSFET 5 V, 48 A, 15 mω Features R DS(on) = 89 mω (Typ.) @ = 1 V, = 24 A Low Gate Charge (Typ. 15 nc) Low C rss (Typ. 45 pf) 1% Avalanche Tested Improved dv/dt Capability
More informationFDD V P-Channel POWERTRENCH MOSFET
3 V P-Channel POWERTRENCH MOSFET General Description This P Channel MOSFET is a rugged gate version of ON Semiconductor s advanced POWERTRENCH process. It has been optimized for power management applications
More informationBottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V
D D D FDMS7658AS N-Channel PowerTrench SyncFET TM 3 V, 76 A,.9 mω Features Max r DS(on) =.9 mω at V GS = V, I D = 8 A Max r DS(on) =. mω at V GS = 7 V, I D = 6 A Advanced Package and Silicon Combination
More informationNTH027N65S3F N-Channel SuperFET III FRFET MOSFET 650 V, 75 A, 27.4 mω Features
NTH027N65S3F N-Channel SuperFET III FRFET MOSFET 650 V, 75 A, 27.4 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 23 mω Ultra Low Gate Charge (Typ. Q g = 259 nc) Low Effective Output Capacitance (Typ.
More informationNTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
More informationFDP8D5N10C / FDPF8D5N10C/D
FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET V, 76 A, 8.5 mω Features Max r DS(on) = 8.5 mω at V GS = V, I D = 76 A Extremely Low Reverse Recovery Charge, Qrr % UIL Tested RoHS Compliant
More informationS1AFL - S1MFL. Surface General-Purpose Rectifier
SAFL - SMFL Surface General-Purpose Rectifier Features Ultra Thin Profile Maximum Height of.08 mm UL Flammability 94V 0 Classification MSL Green Mold Compound These Devices are Pb Free, Halogen Free Free
More informationNTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
More informationNCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output
Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output
More informationNSVS50030SB3 NSVS50031SB3. Bipolar Transistor ( )50 V, ( )3 A, Low V CE (sat), (PNP)NPN Single
NSVSSB, Bipolar Transistor ( ) V, ( ) A, Low V CE (sat), (PNP)NPN Single This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for
More informationPIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
More informationMBRS1540T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.5 AMPERES, 40 VOLTS
MBS154T3 Surface Mount Schottky Power ectifier Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with
More informationFOD819 Series. FOD819 4-Pin DIP High Speed Phototransistor Optocouplers
FOD89 4-Pin DIP High Speed Phototransistor Optocouplers Description The FOD89 consists of a gallium arsenide (GaAs) infra red emitting diode, driving a high speed photo detector with integrated base to
More informationNXH80B120H2Q0SG. Dual Boost Power Module V, 40 A IGBT with SiC Rectifier
NXH8B1HQSG Dual Boost Power Module 1 V, 4 A IGBT with SiC Rectifier The NXH8B1HQSG is a power module containing a dual boost stage consisting of two 4 A / 1 V IGBTs, two 15 A / 1 V silicon carbide diodes,
More informationNSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
More informationHMHA281, HMHA2801 Series. 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers
4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Description The HMHA28 and HMHA280 series devices consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More information