2N4403 / MMBT4403 PNP General-Purpose Amplifier
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1 2N443 / MMBT443 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 5 ma. EB TO-92 SOT-23 Mark:2T B E Figure. 2N443 Device Package Figure 2. MMBT443 Device Package Ordering Information Part Number Marking Package Packing Method 2N443BU 2N443 TO-92 3L Bulk 2N443TF 2N443 TO-92 3L Tape and Reel 2N443TFR 2N443 TO-92 3L Tape and Reel 2N443TA 2N443 TO-92 3L Ammo 2N443TAR 2N443 TO-92 3L Ammo MMBT443 2T SOT-23 3L Tape and Reel 2 Semiconductor omponents Industries, LL. October-27, Rev. 2 Publication Order Number: MMBT443/D
2 Absolute Maximum Ratings (),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25 unless otherwise noted. Symbol Parameter Value Unit V EO ollector-emitter Voltage -4 V V BO ollector-base Voltage -4 V V EBO Emitter-Base Voltage -5. V I ollector urrent - ontinuous -6 ma T J, T STG Operating and Storage Junction Temperature Range -55 to +5 Notes:. These ratings are based on a maximum junction temperature of These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations. Thermal haracteristics Values are at T A = 25 unless otherwise noted. Symbol Parameter Max. 2N443 (3) MMBT443 (4) Total Device Dissipation mw P D Derate Above mw/ R θj Thermal Resistance, Junction to ase 83.3 /W R θja Thermal Resistance, Junction to Ambient /W Unit Notes: 3. PB size: FR-4, 76 mm x 4 mm x.57 mm (3. inch x 4.5 inch x.62 inch) with minimum land pattern size. 4. Device mounted on FR-4 PB.6 inch x.6 inch x.6 inch. 2
3 Electrical haracteristics Values are at T A = 25 unless otherwise noted. Symbol Parameter onditions Min. Max. Unit Off haracteristics V (BR)EO ollector-emitter Breakdown Voltage (5) I = -. ma, I B = -4 V V (BR)BO ollector-base Breakdown Voltage I = -. ma, I E = -4 V V (BR)EBO Emitter-Base Breakdown Voltage I E = -. ma, I = -5. V I BL Base ut-off urrent V E = -35 V, V EB = -.4 V -. μa I EX ollector ut-off urrent V E = -35 V, V EB = -.4 V -. μa On haracteristics I = -. ma, V E = -. V 3 I = -. ma, V E = -. V 6 h FE D urrent Gain I = - ma, V E = -. V I = -5 ma, V E = -2. V (5) 3 I = -5 ma, V E = -2. V (5) 2 V E (sat) ollector-emitter Saturation I = -5 ma, I B = -5 ma -.4 Voltage (5) I = -5 ma, I B = -5 ma -.75 V V BE (sat) Base-Emitter Saturation Voltage I = -5 ma, I B = -5 ma (5) I = -5 ma, I B = -5 ma -.3 V Small Signal haracteristics I f T urrent Gain - Bandwidth Product = -2 ma, V E = - V, f = MHz 2 MHz V cb ollector-base apacitance B = - V, I E =, f = 4 khz 8.5 pf V eb Emitter-Base apacitance BE = -.5 V, I =, f = 4 khz 3 pf I h ie Input Impedance = -. ma, V E = - V, f =. khz.5 5. kω I h re Voltage Feedback Ratio = -. ma, V E = - V, f =. khz. 8. x -4 I h fe Small-Signal urrent Gain = -. ma, V E = - V, f =. khz 6 5 I h oe Output Admittance = -. ma, V E = - V, f =. khz μmhos Switching haracteristics t d Delay Time V = -3 V, I = -5 ma, 5 ns t r Rise Time I B = -5 ma 2 ns t s Storage Time V = -3 V, I = -5 ma, 225 ns t f Fall Time I B = I B2 = -5 ma 3 ns Note: 5. Pulse test: pulse width 3 μs, duty cycle 2.%. 3
4 Typical Performance haracteristics h - TYPIAL PULSED URRENT GAIN FE V - BASE EMITTER VOLTAGE (V) BESAT I - OLLETOR URRENT (ma) V E = 5V Figure 3. Typical Pulsed urrent Gain vs. ollector urrent I - OLLETOR URRENT (ma) β = V - OLLETOR EMITTER VOLTAGE (V) ESAT β = 5 I - OLLETOR URRENT (ma) Figure 4. ollector-emitter Saturation Voltage vs. ollector urrent V - BASE EMITTER ON VOLTAGE (V) BE( ON) I - OLLETOR URRENT (ma) V E = 5V Figure 5. Base-Emitter Saturation Voltage vs. ollector urrent Figure 6. Base-Emitter On Voltage vs. ollector urrent I - OLLETOR URRENT (na) BO. V B = 35V T A- AMBIENT TEMPERATURE ( ) Figure 7. ollector ut-off urrent vs. Ambient Temperature APAITANE (pf) ob ib. 5 REVERSE BIAS VOLTAGE (V) Figure 8. Input and Output apacitance vs. Reverse Bias Voltage 4
5 Typical Performance haracteristics (ontinued) TIME (ns) I c I B= I B2= V cc = 5 V t d t r t f I - OLLETOR URRENT (ma) Figure 9. Switching Times vs. ollector urrent I - TURN N BASE URRENT (ma) B t r = 5 V 3 ns 6 ns 5 I - OLLETOR URRENT (ma) t s TIME (ns) P - POWER DISSIPATION (W) D I c I B= I B2= V cc = 5 V t on t off I - OLLETOR URRENT (ma) Figure. Turn-On and Turn-Off Times vs. ollector urrent TO-92 SOT-23 SOT TEMPERATURE ( o) Figure. Rise Time vs. ollector and Turn-On Base urrents Figure 2. Power Dissipation vs. Ambient Temperature HAR. RELATIVE TO VALUES AT I = -ma V E = - V o T A = I - OLLETOR URRENT (ma) h oe h re h fe h ie Figure 3. ommon Emitter haracteristics HAR. RELATIVE TO VALUES AT V = -V E h ie h re and hoe h fe V - OLLETOR VOLTAGE (V) E h re h ie h fe hoe I = -ma o T A = 25 Figure 4. ommon Emitter haracteristics -2 5
6 o Typical Performance haracteristics (ontinued) HAR. RELATIVE TO VALUES AT T = 25 A I = -ma V E = - V h oe h re h ie.6 h fe T - AMBIENT TEMPERATURE ( o) A h fe h ie h re h oe Figure 5. ommon Emitter haracteristics 6
7 Physical Dimensions TO-92 3L (Tape and Reel, Ammo) Figure 6. 3-LEAD, TO-92, MOLDED.2 IN LINE SPAING LD FORM (J6Z OPTION) (ATIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. 7
8 Physical Dimensions (ontinued) TO-92 3L (Bulk) D Figure 7. 3-LEAD, JEDE TO-92 OMPLIANT STRAGHIT LEAD ONFIGURATION (OLD TO92AM3) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. 8
9 Physical Dimensions (ontinued) (.29).2 MAX (.93) 2.92± SOT-23 3L A B SEE DETAIL A LAND PATTERN REOMMENDATION 2.4± GAGE PLANE MIN (.55).25 SEATING PLANE NOTES: UNLESS OTHERWISE SPEIFIED A) REFERENE JEDE REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. ) DIMENSIONS ARE INLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANING PER ASME Y4.5M E) DRAWING FILE NAME: MA3DREV SALE: 2X Figure 8. 3-LEAD, SOT23, JEDE TO-236, LOW PROFILE (ATIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. 9
10 ON Semiconductor and are trademarks of Semiconductor omponents Industries, LL dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA lass 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLIATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution enter for ON Semiconductor 952 E. 32nd Pkwy, Aurora, olorado 8 USA Phone: or Toll Free USA/anada Fax: or Toll Free USA/anada orderlit@onsemi.com Semiconductor omponents Industries, LL N. American Technical Support: Toll Free USA/anada Europe, Middle East and Africa Technical Support: Phone: Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
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