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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor omponents Industries, LL dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA lass 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2 2N424 MMBT424 2N424 / MMBT424 B E TO-92 SOT-23 Mark: Z B E This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to ma as a switch and to MHz as an amplifier. Absolute Maximum Ratings* TA = 2 unless otherwise noted Symbol Parameter Value Units V EO ollector-emitter Voltage 2 V V BO ollector-base Voltage 3 V V EBO Emitter-Base Voltage. V I ollector urrent - ontinuous 2 ma T J, T stg Operating and Storage Junction Temperature Range - to + *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: ) These ratings are based on a maximum junction temperature of degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal haracteristics TA = 2 unless otherwise noted Symbol haracteristic Max Units 2N424 *MMBT424 P D Total Device Dissipation Derate above mw mw/ R θj Thermal Resistance, Junction to ase 83.3 /W R θja Thermal Resistance, Junction to Ambient 2 37 /W *Device mounted on FR-4 PB.6" X.6" X.6." 2 Fairchild Semiconductor orporation 2N424/MMBT424, Rev A
3 Electrical haracteristics TA = 2 unless otherwise noted Symbol Parameter Test onditions Min Max Units OFF HARATERISTIS (continued) V (BR)EO ollector-emitter Breakdown Voltage I =. ma, I B = 2 V V (BR)BO ollector-base Breakdown Voltage I = µa, I E = 3 V V (BR)EBO Emitter-Base Breakdown Voltage I = µa, I =. V I BO ollector utoff urrent V B = 2 V, I E = na I EBO Emitter utoff urrent V EB = 3. V, I = na 2N424 / MMBT424 ON HARATERISTIS* h FE D urrent Gain I = 2. ma, V E =. V I = ma, V E =. V V E(sat) ollector-emitter Saturation Voltage I = ma, I B =. ma.3 V V BE(sat) Base-Emitter Saturation Voltage I = ma, I B =. ma.9 V SMALL SIGNAL HARATERISTIS f T urrent Gain - Bandwidth Product I = ma, V E = 2 V, f = MHz obo Output apacitance V B =. V, I E =, f = khz ibo Input apacitance V BE =. V, I =, f =. khz cb ollector-base apcitance V B =. V, I E =, f = khz h fe Small-Signal urrent Gain V E = V, I = 2. ma, f =. khz NF Noise Figure I = µa, V E =. V, R S =.kω, f= Hz to.7 khz 3 MHz 4. pf 8. pf 4. pf db *Pulse Test: Pulse Width 3 µs, Duty ycle 2.%
4 Typical haracteristics h - TYPIAL PULSED URRENT GAIN FE Typical Pulsed urrent Gain vs ollector urrent 2-4. I - OLLETOR URRENT (ma) 2 V E = V V - OLLETOR-EMITTER VOLTAGE (V) ESAT... (continued) ollector-emitter Saturation Voltage vs ollector urrent β =. I - OLLETOR URRENT (ma) N424 / MMBT424 V - BASE-EMITTER VOLTAGE (V) BESAT Base-Emitter Saturation Voltage vs ollector urrent β = - 4. I - OLLETOR URRENT (ma) 2 2 V - BASE-EMITTER ON VOLTAGE (V) BE(ON) Base-Emitter ON Voltage vs ollector urrent V E = V I - OLLETOR URRENT (ma) 2 2 I - OLLETOR URRENT (na) BO. V ollector-utoff urrent vs Ambient Temperature B = 3V T - AMBIENT TEMPERATURE ( ) A APAITANE (pf) apacitance vs Reverse Bias Voltage ibo f =. MHz obo. REVERSE BIAS VOLTAGE (V)
5 Typical haracteristics (continued) NF - NOISE FIGURE (db) Noise Figure vs Frequency I =. ma R S = 2Ω I = µa R S =. kω I =. ma R S = 2Ω V =.V E I = µa, R = Ω S. f - FREQUENY (khz) NF - NOISE FIGURE (db) (continued) Noise Figure vs Source Resistance I =. ma I =. ma I = µa I = µa. R S - SOURE RESISTANE ( kω ) 2N424 / MMBT424 h fe - URRENT GAIN (db) urrent Gain and Phase Angle vs Frequency h fe V E = 4V I = ma f - FREQUENY (MHz) θ θ - DEGREES P - POWER DISSIPATION (W) D.7..2 TO-92 SOT-23 Power Dissipation vs Ambient Temperature SOT o TEMPERATURE ( ) TIME (ns) Turn-On Time vs ollector urrent 2.V 4V V I c I B= I B2= V = 3.V r t V B = V I - OLLETOR URRENT (ma) t - RISE TIME (ns) r Rise Time vs ollector urrent T J = 2 V = 4V T = 2 J I c I B= I B2= I - OLLETOR URRENT (ma)
6 Ω µ f Typical haracteristics (continued) t - STORAGE TIME (ns) S Storage Time vs ollector urrent T = 2 J T J = 2 I c I B= I B2= t - FALL TIME (ns) (continued) Fall Time vs ollector urrent T = 2 J T J = 2 I c I B= I B2= V = 4V 2N424 / MMBT424 I - OLLETOR URRENT (ma) I - OLLETOR URRENT (ma) h - URRENT GAIN fe urrent Gain V E = V f =. khz o T A = 2. I - OLLETOR URRENT (ma) h - OUTPUT ADMITTANE ( mhos) oe V E = V f =. khz o T A = 2 Output Admittance. I - OLLETOR URRENT (ma) h - INPUT IMPEDANE (k ) ie Input Impedance V E = V f =. khz o T A = 2.. I - OLLETOR URRENT (ma) h - VOLTAGE FEEDBAK RATIO (x ) _ 4 re Voltage Feedback Ratio V E = V f =. khz o T A = 2. I - OLLETOR URRENT (ma)
7 Test ircuits Duty ycle = 2% -. V 3 ns.6 V (continued) KΩ 3. V 27 Ω < 4. pf 2N424 / MMBT424 <. ns FIGURE : Delay and Rise Time Equivalent Test ircuit 3. V < t < µs t.9 V 27 Ω Duty ycle = 2% KΩ < 4. pf - 9. V <. ns N96 FIGURE 2: Storage and Fall Time Equivalent Test ircuit
8 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. AEx Bottomless oolfet ROSSVOLT DOME E 2 MOS TM EnSigna TM FAT FAT Quiet Series FAST DISLAIMER LIFE SUPPORT POLIY FAIRHILD S PRODUTS ARE NOT AUTHORIZED FOR USE AS RITIAL OMPONENTS IN LIFE SUPPORT DEVIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRHILD SEMIONDUTOR ORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSe ISOPLANAR MIROWIRE OPTOLOGI OPTOPLANAR PAMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UH VX FAIRHILD SEMIONDUTOR RESERVES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROVE RELIABILITY, FUNTION OR DESIGN. FAIRHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONVEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G
9 ON Semiconductor and are trademarks of Semiconductor omponents Industries, LL dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA lass 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLIATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution enter for ON Semiconductor 92 E. 32nd Pkwy, Aurora, olorado 8 USA Phone: or Toll Free USA/anada Fax: or Toll Free USA/anada orderlit@onsemi.com Semiconductor omponents Industries, LL N. American Technical Support: Toll Free USA/anada Europe, Middle East and Africa Technical Support: Phone: Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
10 Mouser Electronics Authorized Distributor lick to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: MMBT424
TO-92 SOT-23 Mark: ZF. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N426 MMBT426 2N426 / MMBT426 B E TO-92 SOT-23 Mark: ZF B E This device is designed for general purpose amplifier and switching applications at collector currents to µa as a switch and to ma as an amplifier.
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N425 2N425 B E TO-92 This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
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More informationE C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N441 MMBT441 2N441 / MMBT441 E B E TO-92 SOT-23 Mark: 2X B NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 5 ma.
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S7-6 Mark:.2A FFB396 B2 E2 pin # 2 B E NOTE: The pinouts are symmetrical; pin and pin are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of
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2N396 / MMBT396 / PZT396 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of ma to ma. EB Ordering Information
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2N443 / MMBT443 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 5 ma. EB TO-92 SOT-23 Mark:2T B E Figure. 2N443
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
BV26 BV26 E SOT-23 Mark: FD B PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 8 ma. Sourced from Process 61. Absolute Maximum Ratings*
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B E PN297A TO-92 MMPQ297 E B E B E B E B SOI-6 MMBT297A This device is designed for use as a general purpose amplifier and switch requiring collector currents to 5 ma. Sourced from Process 63. SOT-23 Mark:
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BP52 BP52 SOT-223 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1. A. Sourced from Process
More informationDistributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. PN2222A MMBT2222A PZT2222A EB E TO-92 SOT-23 B SOT-223 Mark:P B E NPN General
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N MMBT N / MMBT B E TO-9 SOT-3 Mark: Z B E This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz as an amplifier. Abslute Maximum
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N5/MMBT5 This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 5 ma. N5/MMBT5 BE TO-9 B E OT- Mark: M Absolute Maximum Ratings* TA =
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E SOT-23 Mark: ED B This device is designed for general purpose amplifier applications at collector currents to 5 ma. Sourced from Process 19. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
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More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N425 2N425 B E TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationTO-92 SOT-23 Mark: 83. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N44 MMBT44 2N44 / MMBT44 B E TO-92 SOT-23 Mark: 83 B E This device is designed for use as general purpose amplifiers and switches requiring collector currents to 5 ma. Absolute Maximum Ratings* TA = 25
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units. V V V CBO Collector-Base Voltage 2N5088 2N5089
B E N588 N589 TO-9 This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 5 ma. MMBT588 MMBT589 OT- Mark: Q / R B E Absolute Maximum Ratings*
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More information参考資料 E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N44 MMBT44 2N44 / MMBT44 E B E TO-92 SOT-23 Mark: 2X B NPN General Pupse Amplifier This device is designed fr use as a medium pwer amplifier and switch requiring cllectr currents up t 5 ma. Abslute Maximum
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. G S D 2N5457 2N5458 2N5459 TO-92 This device is a low level audio amplifier
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Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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More informationPUBLICATION ORDERING INFORMATION. Semiconductor Components Industries, LLC
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