FSB560/FSB560A NPN Low Saturation Transistor

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Deborah Lester
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/A NPN Low Saturation Transistor Features These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.

1 /A NPN Low Saturation Transistor Features These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* T A =25 unless otherwise noted May 29 Symbol Parameter Ratings Units V EO ollector-emitter Voltage 6 V B E /A NPN Low Saturation Transistor V BO ollector-base Voltage 8 V V EBO Emitter-Base Voltage 5 V I ollector urrent - ontinuous 2 A T J, T STG Operating and Storage Junction Temperature Range - 55 to +15 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1)These ratings are based on a maximum junction temperature of 15. 2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal haracteristics T A =25 unless otherwise noted Symbol Parameter Max. A Units P D Total Device Dissipation 5 mw R θja Thermal Resistance, Junction to Ambient 25 /W 29 Fairchild Semiconductor orporation /A Rev. B2 1

2 Electrical haracteristics T A =25 unless otherwise noted Symbol Parameter Test onditions Min. Max. Units Off haracteristics BV EO ollector-emitter Breakdown Voltage I = 1mA 6 V BV BO ollector-base Breakdown Voltage I = µa 8 V BV EBO Emitter-Base Breakdown Voltage I E = µa 5 V I BO ollector utoff urrent V B = 3V V B = 3V, T A = I EBO Emitter utoff urrent V EB = 4V na On haracteristics* h FE D urrent Gain I = ma, V E = 2V I = 5mA, V E = 2V I = 1A, V E = 2V I = 2A, V E = 2V V E (sat) ollector-emitter Saturation Voltage I = 1A, I B = ma I = 2A, I B = 2mA A A V BE (sat) Base-Emitter Saturation Voltage I = 1A, I B = ma 1.25 V na µa /A NPN Low Saturation Transistor V BE (on) Base-Emitter On Voltage I = 1A, V E = 2V 1 V Small Signal haracteristics obo Output apacitance V B = 1V, I E =, f = 1MHz 3 pf f T Transition Frequency I = ma, V E = 5V, f = MHz 75 MHz * Pulse Test: Pulse Width µs, Duty ycle 2.% 29 Fairchild Semiconductor orporation /A Rev. B2 2

3 Typical Performance haracteristics V -BASE-EMITTER SATURATION VOLTAGE(V) BESAT V - OLLETOR-EMITTER VOLTAGE (V) ESAT Base-Emitter Saturation Voltage vs ollector urrent β = I - OLLETOR URRENT (A) Figure 1. Base-Emitter Saturation Voltage vs ollector urrent ollector-emitter Saturation Voltage vs ollector urrent β = I - OLLETOR URRENT (ma) 125 Figure 3. ollector-emitter Saturation Voltage vs ollector urrent 25-4 V - BASE-EMITTER ON VOLTAGE (V) BEON APAITANE (pf) Base-Emitter On Voltage vs. ollector urrent V = 2.V ce I - OLLETOR URRENT (A) Figure 2. Base-Emitter On Voltage vs ollector urrent Input/Output apacitance vs. Reverse Bias Voltage V - OLLETOR VOLTAGE (V) E ibo obo Figure 4. Input/Output apacitance vs Reverse Bias Voltage f = 1. MHz /A NPN Low Saturation Transistor 4 V E = 2 V 7 6 T A =125 o A h FE - D URRENT GAIN 2 T A =15 o 25 o -4 o h FE - D URRENT GAIN o -4 o V E = 2 V I - OLLETOR URRENT [A] Figure 5. urrent Gain vs ollector urrent I - OLLETOR URRENT [A] Figure 6. urrent Gain vs ollector urrent 29 Fairchild Semiconductor orporation /A Rev. B2 3

4 Physical Dimensions SuperSOT-23 /A NPN Low Saturation Transistor 29 Fairchild Semiconductor orporation /A Rev. B2 4

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NZT660 / NZT660A PNP Low Saturation Transistor

NZT660 / NZT660A PNP Low Saturation Transistor NZT66 / NZT66A PNP Low Saturation Transistor Description These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. January 24 4 3 2 SOT-223.