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PN2222A MMBT2222A PZT2222A EB E TO-92 SOT-23 B SOT-223 Mark:P B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 5mA.

Absolute Maximum Ratings * T a =25 unless otherwise noted Symbol Parameter Value Units V EO ollector-emitter Voltage 4 V V BO ollector-base Voltage 75 V V EBO Emitter-Base Voltage 6.

2 PN2222A MMBT2222A PZT2222A EB E TO-92 SOT-23 B SOT-223 Mark:P B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 5mA. Sourced from process 9. Absolute Maximum Ratings * T a =25 unless otherwise noted Symbol Parameter Value Units V EO ollector-emitter Voltage 4 V V BO ollector-base Voltage 75 V V EBO Emitter-Base Voltage 6. V I ollector urrent. A T STG Operating and Storage Junction Temperature Range - 55 ~ 5 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: ) These ratings are based on a maximum junction temperature of 5 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical haracteristics T a =25 unless otherwise noted Symbol Parameter Test ondition Min. Max. Units Off haracteristics BV (BR)EO ollector-emitter Breakdown Voltage * I = ma, I B = 4 V BV (BR)BO ollector-base Breakdown Voltage I = µa, I E = 75 V BV (BR)EBO Emitter-Base Breakdown Voltage I E = µa, I = 6. V I EX ollector utoff urrent V E = 6V, V EB(off) = 3.V na I BO ollector utoff urrent V B = 6V, I E = V B = 6V, I E =, T a = 25 I EBO Emitter utoff urrent V EB = 3.V, I = µa I BL Base utoff urrent V E = 6V, V EB(off) = 3.V 2 µa On haracteristics h FE D urrent Gain I =.ma, V E = V I =.ma, V E = V I = ma, V E = V I = ma, V E = V, T a = -55 I = 5mA, V E = V * I = 5mA, V E = V * I = 5mA, V E = V * V E(sat) ollector-emitter Saturation Voltage * I = 5mA, V E = V I = 5mA, V E = V V BE(sat) Base-Emitter Saturation Voltage * I = 5mA, V E = V I = 5mA, V E = V * Pulse Test: Pulse Width 3µs, Duty ycle 2.% µa µa V V V V 24 Fairchild Semiconductor orporation Rev. A, August 24

3 Electrical haracteristics Ta=25 unless otherwise noted (ontinued) Symbol Parameter Test ondition Min. Max. Units Small Signal haracteristics f T urrent Gain Bandwidth Product I = 2mA, V E = 2V, f = MHz 3 MHz obo Output apacitance V B = V, I E =, f = MHz 8. pf ibo Input apacitance V EB =.5V, I =, f = MHz 25 pf rb c ollector Base Time onstant I = 2mA, V B = 2V, f = 3.8MHz 5 ps NF Noise Figure I = µa, V E = V, 4. db R S =.KΩ, f =.KHz Re(h ie ) Real Part of ommon-emitter High Frequency Input Impedance I = 2mA, V E = 2V, f = 3MHz 6 Ω Switching haracteristics t d Delay Time V = 3V, V EB(off) =.5V, ns t r Rise Time I = 5mA, I B = 5mA 25 ns t s Storage Time V = 3V, I = 5mA, 225 ns t f Fall Time I B = I B2 = 5mA 6 ns Thermal haracteristics T a =25 unless otherwise noted P D Symbol * Device mounted on FR-4 PB ** Device mounted on FR-4 PB 36mm 8mm.5mm; mounting pad for the collector lead min. 6cm 2. Spice Model Parameter Total Device Dissipation Derate above 25 NPN (Is = 4.34f Xti = 3 Eg =. Vaf = 74.3 Bf = Ne =.37 Ise = 4.34 Ikf =.2847 Xtb =.5 Br = 6.92 Isc = Ikr = Rc = jc = 7.36p Mjc =.346 Vjc =.75 Fc =.5 je = 22.p Mje =.377 Vje =.75 Tr = 46.9n Tf = 4.p Itf =.6 Vtf =.7 Xtf = 3 Rb = ) Max. PN2222A *MMBT2222A **PZT2222A , 8. Units mw mw/ R θj Thermal Resistance, Junction to ase 83.3 /W R θja Thermal Resistance, Junction to Ambient /W 24 Fairchild Semiconductor orporation Rev. A, August 24

4 Typical haracteristics h - TYPIAL PULSED URRENT GAIN FE I - OLLETOR URRENT (ma) V = 5V E Figure. Typical Pulsed urrent Gain vs ollector urrent V - OLLETOR-EMITTER VOLTAGE (V) ESAT β = 25 캜 5 I - OLLETOR URRENT (ma) 25 캜 - 4 캜 Figure 2. ollector-emitter Saturation Voltage vs ollector urrent V - BASE-EMITTER VOLTAGE (V) BESAT β = - 4 캜 I I - OLLETOR URRENT (ma) I I - OLLETOR URRENT (ma) 25 캜 25 캜 V - BASE-EMITTER ON VOLTAGE (V) BE (ON) V E = 5V Figure 3. Base-Emitter Saturation Voltage vs ollector urrent Figure 4. Base-Emitter On Voltage vs ollector urrent I - OLLETOR URRENT (na) BO 5. V = 4V B T - AMBIENT TEMPERATURE ( ) A Figure 5. ollector utoff urrent vs Ambient Temperature APAITANE (pf) ob te f = MHz. REVERSE BIAS VOLTAGE (V) Figure 6. Emitter Transition and Output apacitance vs Reverse Bias Voltage 24 Fairchild Semiconductor orporation Rev. A, August 24

5 Typical haracteristics TIME (ns) I c I B= I B2= V cc = 25 V 6 6 t s t t r off 8 8 t f t on t d I I - OLLETOR URRENT (ma) I I - OLLETOR URRENT (ma) TIME (ns) I c I B= I B2= V cc = 25 V Figure 7. Turn On and Turn Off Times vs ollector urrent Figure 8. Switching Times vs ollector urrent P - POWER DISSIPATION (W) D TO-92 SOT-23 SOT o TEMPERATURE ( ) Figure 9. Power Dissipation vs Ambient Temperature HAR. RELATIVE TO VALUES AT I = ma 8 V E = V o T A = h ie I - OLLETOR URRENT (ma) h oe h re h fe Figure. ommon Emitter haracteristics HAR. RELATIVE TO VALUES AT T = 25 o A V E = V I = ma T - AMBIENT TEMPERATURE ( o ) A h re h ie Figure. ommon Emitter haracteristics h fe h oe HAR. RELATIVE TO VALUES AT V = V E V - OLLETOR VOLTAGE (V) E I = ma T A = 25 o h fe h ie h re h oe Figure 2. ommon Emitter haracteristics 24 Fairchild Semiconductor orporation Rev. A, August 24

6 Package Dimensions TO-92 Dimensions in Millimeters 22 Fairchild Semiconductor orporation Rev. A, August 24

7 Package Dimensions (ontinued) SOT-23 Dimensions in Millimeters 22 Fairchild Semiconductor orporation Rev. A, August 24

8 Package Dimensions (ontinued) SOT-223 Dimensions in Millimeters 22 Fairchild Semiconductor orporation Rev. A, August 24

9 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. AEx ActiveArray Bottomless oolfet ROSSVOLT DOME EcoSPARK E 2 MOS EnSigna FAT FAT Quiet Series DISLAIMER FAIRHILD SEMIONDUTOR RESERVES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROVE RELIABILITY, FUNTION OR DESIGN. FAIRHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONVEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLIY FAIRHILD S PRODUTS ARE NOT AUTHORIZED FOR USE AS RITIAL OMPONENTS IN LIFE SUPPORT DEVIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRHILD SEMIONDUTOR ORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUT STATUS DEFINITIONS Definition of Terms FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSe I 2 i-lo ImpliedDisconnect Across the board. Around the world. The Power Franchise Programmable Active Droop ISOPLANAR LittleFET MIROOUPLER MicroFET MicroPak MIROWIRE MSX MSXPro OX OXPro OPTOLOGI OPTOPLANAR PAMAN POP Power247 PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series Rapidonfigure Rapidonnect µserdes SILENT SWITHER SMART START SPM Stealth 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TINYOPTO TruTranslation UH UltraFET VX Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 24 Fairchild Semiconductor orporation Rev. I

TO-92 SOT-23 Mark: ZF. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TO-92 SOT-23 Mark: ZF. TA = 25 C unless otherwise noted. Symbol Parameter Value Units 2N426 MMBT426 2N426 / MMBT426 B E TO-92 SOT-23 Mark: ZF B E This device is designed for general purpose amplifier and switching applications at collector currents to µa as a switch and to ma as an amplifier.