ISL9R860P2, ISL9R860S2, ISL9R860S3ST

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1 ISL9RP, ISL9RS, ISL9RS3ST A, V Stealth Diode General Description The ISL9RP, ISL9RS and ISL9RS3S are Stealth diodes optimized for low loss performance in high frequency hard switched applications. The Stealth family exhibits low reverse recovery current (I RRM ) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I RRM and short t a phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA99. May Features Soft Recovery t b / t a >.5 Fast Recovery t rr < 5ns Operating Temperature o C Reverse Voltage V Avalanche Energy Rated Applications Switch Mode Power Supplies Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode ISL9RP, ISL9RS, ISL9RS3ST Package Symbol JEDEC TO-AC JEDEC STYLE TO- JEDEC TO-3AB K (FLANGE) ANODE ANODE (FLANGE) (FLANGE) N/C ANODE A Device Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V RRM Peak Repetitive Reverse Voltage V V RWM Working Peak Reverse Voltage V V R DC Blocking Voltage V I F(AV) Average Rectified Forward Current (T C = 17 o C) A I FRM Repetitive Peak Surge Current (khz Square Wave) 1 A I FSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase Hz) 1 A P D Power Dissipation 5 W E AVL Avalanche Energy (1A, mh) mj T J, T STG Operating and Storage Temperature Range -55 to 175 C T L T PKG Maximum Temperature for Soldering Leads at.3in (1.mm) from Case for 1s Package Body for 1s, See Techbrief TB33 CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 3 C C Fairchild Semiconductor Corporation ISL9RP, ISL9RS, ISL9RS3ST Rev. C1

2 Package Marking and Ordering Information Device Marking Device Package Tape Width Quantity RP ISL9RP TO-AC - - RS ISL9RS TO- - - RS3S ISL9RS3ST TO-3AB mm Electrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics I R Instantaneous Reverse Current V R = V T C = 5 C µa T C = 15 C ma On State Characteristics V F Instantaneous Forward Voltage I F = A T C = 5 C -.. V T C = 15 C V Dynamic Characteristics C J Junction Capacitance V R = 1V, I F = A pf Switching Characteristics t rr Reverse Recovery Time I F = 1A, di F /dt = 1A/µs, V R = 3V ns I F = A, di F /dt = 1A/µs, V R = 3V ns t rr Reverse Recovery Time I F = A, - - ns I RRM Maximum Reverse Recovery Current di F /dt = A/µs, A Q RR Reverse Recovery Charge V R = 39V, T C = 5 C nc t rr Reverse Recovery Time I F = A, ns S Softness Factor (t b /t a ) di F /dt = A/µs, V R = 39V, I RRM Maximum Reverse Recovery Current A T C = 15 C Q RR Reverse Recovery Charge nc t rr Reverse Recovery Time I F = A, ns S Softness Factor (t b /t a ) di F /dt = A/µs, V R = 39V, I RRM Maximum Reverse Recovery Current A T C = 15 C Q RR Reverse Recovery Charge nc di M /dt Maximum di/dt during t b A/µs ISL9RP, ISL9RS, ISL9RS3ST Thermal Characteristics R θjc Thermal Resistance Junction to Case C/W R θja Thermal Resistance Junction to Ambient TO- - - C/W R θja Thermal Resistance Junction to Ambient TO- - - C/W R θja Thermal Resistance Junction to Ambient TO-3 C/W Fairchild Semiconductor Corporation ISL9RP, ISL9RS, ISL9RS3ST Rev. C1

3 Typical Performance Curves t, RECOVERY TIMES (ns) I F, FORWARD CURRENT (A) o C 1 15 o C 5 o C 1 15 o C 1 o C V F, FORWARD VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage V R = 39V, T J = 15 C 7 t b AT di F /dt = A/µs, 5A/µs, A/µs 5 3 I R, REVERSE CURRENT (µa) t, RECOVERY TIMES (ns) o C 15 o C 15 o C 1 o C 5 o C V R, REVERSE VOLTAGE (V) Figure. Reverse Current vs Reverse Voltage V R = 39V, T J = 15 C t b AT I F = 1A, A, A ISL9RP, ISL9RS, ISL9RS3ST 1 t a AT di F /dt = A/µs, 5A/µs, A/µs I F, FORWARD CURRENT (A) Figure 3. t a and t b Curves vs Forward Current 1 1 t a AT I F = 1A, A, A Figure. t a and t b Curves vs di F /dt I RRM, MAX REVERSE RECOVERY CURRENT (A) V R = 39V, T J = 15 C di F /dt = A/µs di F /dt = 5A/µs di F /dt = A/µs I F, FORWARD CURRENT (A) 1 I RRM, MAX REVERSE RECOVERY CURRENT (A) V R = 39V, T J = 15 C I F = A I F = 1A I F = A Figure 5. Maximum Reverse Recovery Current vs Forward Current Figure. Maximum Reverse Recovery Current vs di F /dt Fairchild Semiconductor Corporation ISL9RP, ISL9RS, ISL9RS3ST Rev. C1

4 Typical Performance Curves (Continued) S, REVERSE RECOVERY SOFTNESS FACTOR V R = 39V, T J = 15 C I F = 1A I F = A I F = A Figure 7. Reverse Recovery Softness Factor vs di F /dt C J, JUNCTION CAPACITANCE (pf) V R, REVERSE VOLTAGE (V) Q RR, REVERSE RECOVERY CHARGE (nc) I F(AV), AVERAGE FORWARD CURRENT (A) 35 V R = 39V, T J = 15 C 3 I F = 1A 5 I F = A 15 I F = A Figure. Reverse Recovery Charge vs di F /dt T C, CASE TEMPERATURE ( o C) ISL9RP, ISL9RS, ISL9RS3ST Figure 9. Junction Capacitance vs Reverse Voltage Figure 1. DC Current Derating Curve Z θja, NORMALIZED THERMAL IMPEDANCE 1..1 DUTY CYCLE - DESCENDING ORDER SINGLE PULSE P DM t 1 t NOTES: DUTY FACTOR: D = t 1 /t PEAK T J = P DM x Z θja x R θja + T A t, RECTANGULAR PULSE DURATION (s) Figure 11. Normalized Maximum Transient Thermal Impedance Fairchild Semiconductor Corporation ISL9RP, ISL9RS, ISL9RS3ST Rev. C1

5 Test Circuits and Waveforms V GE AMPLITUDE AND R G CONTROL di F /dt t 1 AND t CONTROL I F V GE t 1 t R G Figure 1. t rr Test Circuit I = 1A L = mh R <.1Ω V DD = 5V E AVL = 1/LI [V R(AVL) /(V R(AVL) - V DD )] Q 1 = IGBT (BV CES > DUT V R(AVL) ) L DUT MOSFET CURRENT SENSE L R + V DD - I F di F dt Figure 13. t rr Waveforms and Definitions t a V AVL t rr t b.5 I RM I RM ISL9RP, ISL9RS, ISL9RS3ST Q1 CURRENT SENSE + V DD I V I L I L DUT - t t 1 t t Figure 1. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage Waveforms Fairchild Semiconductor Corporation ISL9RP, ISL9RS, ISL9RS3ST Rev. C1

6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E CMOS EnSigna FACT FACT Quiet Series DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC I C i-lo ImpliedDisconnect Across the board. Around the world. The Power Franchise Programmable Active Droop ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power7 PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes SILENT SWITCHER SMART START SPM Stealth. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition SuperFET SuperSOT -3 SuperSOT - SuperSOT - SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11

ISL9R3060G2, ISL9R3060P2

ISL9R3060G2, ISL9R3060P2 ISL9R36G2, ISL9R36P2 3A, 6V Stealth Diode General Description The ISL9R36G2 and ISL9R36P2 are Stealth diodes optimized for low loss performance in high frequency hard switched applications. The Stealth