Features. 13 A, 30 V. R DS(ON) = 11.3 V GS = 10 V R DS(ON) = 14.4 V GS = 4.5 V. RoHS Compliant. Symbol Parameter Ratings Units
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1 3V N-Channel Fast Switching PowerTrench MOSFET February 27 tm General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R DS(ON) and fast switching speed. Applications DC/DC converter Power management Load switch Features 3 A, 3 V. R DS(ON) =.3 V GS = V R DS(ON) = 4.4 V GS = 4.5 V Low gate charge ( nc typical) High performance trench technology for extremely low R DS(ON) High power and current handling capability. RoHS Compliant SO-8 D D D D D Pin SO-8 S S S G Absolute Maximum Ratings TA=25 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage 3 V V GSS Gate-Source Voltage ± 2 V I D Drain Current Continuous (Note a) 3 A P D Pulsed 5 Power Dissipation for Single Operation (Note a) 3. (Note b).2 E AS Single Pulse Avalanche Energy (Note 3) 8 mj T J, T STG Operating and Storage Junction Temperature Range 55 to +75 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 5 C/W R θja Thermal Resistance, Junction-to-Ambient (Note b) 25 R θjc Thermal Resistance, Junction-to-Case (Note ) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 3 2mm 25 units W 27 Fairchild Semiconductor Corporation Rev D (W)
2 Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = 25 µa 3 V BVDSS Breakdown Voltage Temperature I T J Coefficient D = 25 µa, Referenced to 25 C 27 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 24 V, V GS = V µa I GSS Gate Body Leakage V GS = ± 2 V, V DS = V ± na On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 25 µa.8 3 V VGS(th) T J R DS(on) Gate Threshold Voltage Temperature Coefficient Static Drain Source On Resistance I D = 25 µa, Referenced to 25 C V GS = V, I D = 3 A V GS = 4.5 V, I D = 2 A V GS= V, I D = 3 A, T J=25 C 5 mv/ C I D(on) On State Drain Current V GS = V, V DS = 5 V 5 A g FS Forward Transconductance V DS = V, I D = 3 A 48 S Dynamic Characteristics C iss Input Capacitance V DS = 5 V, V GS = V, 25 pf C oss Output Capacitance f =. MHz 323 pf C rss Reverse Transfer Capacitance mω 2 pf R G Gate Resistance V GS = 5 mv, f =. MHz.9 Ω Switching Characteristics (Note 2) t d(on) Turn On Delay Time V DD = 5 V, I D = A, 9 8 ns t r Turn On Rise Time V GS = V, R GEN = 6 Ω 4 8 ns t d(off) Turn Off Delay Time ns t f Turn Off Fall Time 6 2 ns Q g Total Gate Charge V DS = 5 V, I D = 3 A, 4 nc Q gs Gate Source Charge V GS = 5 V 3.5 nc Q gd Gate Drain Charge 3 nc Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current 2. A Drain Source Diode Forward V SD V Voltage GS = V, I S = 2. A (Note 2).74.2 V t rr Diode Reverse Recovery Time I F = 3 A, d if/d t = A/µs 25 ns Q rr Diode Reverse Recovery Charge 4 nc Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 5 C/W when mounted on a in 2 pad of 2 oz copper b) 25 C/W when mounted on a minimum pad. Scale : on letter size paper 2. Test: Pulse Width < 3µs, Duty Cycle < 2.% 3. Starting TJ = 25 C, L = 3mH, IAS = A,VDD = 3V, VGS = V Rev D (W)
3 Typical Characteristics I D, DRAIN CURRENT (A) V GS = V 6.V 4.V 4.5V 3.5.V 3.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 3.5V 4.V 4.5V 5.V 6.V V V DS, DRAIN-SOURCE VOLTAGE (V) I D, DRAIN CURRENT (A) Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 3A V GS = V T J, JUNCTION TEMPERATURE ( o C) R DS(ON), ON-RESISTANCE (OHM).28 I D = 3A T A = 25 o C.2.8 T A = 25 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. I D, DRAIN CURRENT (A) V DS = 5V T A = -55 o C VGS, GATE TO SOURCE VOLTAGE (V) 25 o C 25 o C I S, REVERSE DRAIN CURRENT (A) V GS = V T A = 25 o C 25 o C. -55 o C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev D (W)
4 Typical Characteristics V GS, GATE-SOURCE VOLTAGE (V) I D = 3A V DS = V 2V 5V CAPACITANCE (pf) C ISS C OSS C RSS f = MHz V GS = V Q g, GATE CHARGE (nc) V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. I D, DRAIN CURRENT (A). R DS(ON) LIMIT V GS = V SINGLE PULSE R θja = 25 o C/W T A = 25 o C ms ms ms s s DC I AS, AVALANCHE CURRENT (A) T J=25 T J=25... V DS, DRAIN-SOURCE VOLTAGE (V).. t AV, TIME IN AVALANCHE (ms) Figure 9. Maximum Safe Operating Area. Figure. Unclamped Inductive Switching Capability Figure P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE RθJA = 25 C/W TA = 25 C... t, TIME (sec). Single Pulse Maximum Power Dissipation. Rev D (W)
5 Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D = SINGLE PULSE..... t, TIME (sec) R θja (t) = r(t) * R θja R θja = 25 /W P(pk) t t 2 T J - T A = P * R θja (t) Duty Cycle, D = t / t 2 Figure 2. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. Rev D (W)
6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless Build it Now CoolFET CROSSVOLT DOME EcoSPARK E 2 CMOS EnSigna FACT FAST FASTr FPS FRFET FACT Quiet Series GlobalOptoisolator GTO HiSeC I 2 C i-lo ImpliedDisconnect IntelliMAX ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro Across the board. Around the world. The Power Franchise Programmable Active Droop OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TCM TinyBoost TinyBuck TinyPWM TinyPower TinyLogic TINYOPTO TruTranslation UHC UniFET VCX Wire DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 Rev D (W)
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200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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FDP047N N-Channel PowerTrench MOSFET 0V, 164A, 4.7mΩ Description R DS(on) = 3.9mΩ ( Typ.) @ V GS = V, I D = 75A Fast switching speed Low gate charge High performance trench technology for extremely low
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600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
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FDZ24P June 07 Monolithic Common Drain P-Channel 2.V Specified Power Trench BGA MOSFET -V, -6.A, 28mΩ Features Max r DS(on) = 28mΩ at V GS = -4.V, I D = -6.A Max r DS(on) = 4mΩ at V GS = -2.V, I D = -A
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900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
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More informationQFET TM FQP13N50C/FQPF13N50C
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationDescription. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 60 V V GSS Gate to Source Voltage ±20 V
FDP80N06 N-Channel MOSFET 60V, 80A, 0mΩ Features R DS(on) = 8.5mΩ ( Typ.)@ V GS = 0V, I D = 40A Low gate charge(typ. 57nC) Low C rss (Typ. 45pF) Fast switching Improved dv/dt capability RoHS compliant
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RFP12N1L Data Sheet April 25 12A, 1V,.2 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic
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More information= 25 o C unless other wise noted Symbol Parameter NDS9945 Units V DSS. Drain-Source Voltage 60 V V GSS. Gate-Source Voltage ±20 V I D
May 998 N9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high
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500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationDistributed by: www.jameco.com -8-8-4242 The content and copyrights of the attached material are the property of its owner. Connection Diagram 448 448SE SOT-2 2 5H MARKING MMBD448 5H MMBD448CA MMBD448CC
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600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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500V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
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