2N7002DW N-Channel Enhancement Mode Field Effect Transistor. Symbol Parameter Value Units. Symbol Parameter Value Units

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1 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant SC70-6 (SOT363) Absolute Maximum Ratings * T a = 25 C unless otherwise noted Symbol Parameter Value Units V DSS Drain-Source Voltage 60 V V DGR Drain-Gate Voltage R GS MΩ 60 V S Gate-Source Voltage Continuous Pulsed Drain Current Continuous 100 C Pulsed 1 Marking : 2N T J, T STG Junction and Storage Temperature Range -55 to +150 C 1 ±20 ± October 2007 V ma * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics P D Symbol Parameter Value Units Total Device Dissipation Derating above TA = 25 C * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x inch, Minimun land pad size, mw mw/ C R θja Thermal Resistance, Junction to Ambient * 625 C/W 2N7002DW Rev. A 1

2 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Condition MIN TYP MAX Units Off Characteristics (Note1) BV DSS Drain-Source Breakdown Voltage = 0V, =10uA V SS Zero Gate Voltage Drain Current V DS = 60V, = 0V V DS = 60V, = C = 125 C On Characteristics (Note1) Dynamic Characteristics Switching Characteristics Note1 : Short duration test pulse used to minimize self-heating effect I GSS Gate-Body Leakage = ±20V, V DS = 0V ±10 na (th) Gate Threshold Voltage V DS =, = 250uA 1.76 V R DS(ON) Satic Drain-Source On-Resistance = 5V, = 0.05A, = 10V, = = 125 C (ON) On-State Drain Current = 10V, V DS = 7.5V A g FS Forward Transconductance V DS = 10V, = 0.2A ms C iss Input Capacitance pf C oss Output Capacitance V DS = 25V, = 0V, f = MHz pf C rss Reverse Transfer Capacitance pf t D(ON) Turn-On Delay Time V DD = 30V, = 0.2A, V GEN = 10V t D(OFF) Turn-Off Delay Time R L = 150Ω, R GEN = 25Ω ua Ω ns 2N7002DW Rev. A 2

3 Typical Performance Characteristics Figure 1. On-Region Characteristics. DRAIN-SOURCE CURRENT(A) = 10V 0.2 2V V DS. DRAIN-SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature R DS (on) (Ω) DRANI-SOURCE ON-RESISTANCE 3.0 = 10V = 500 ma V 4V 3V T J. JUNCTION TEMPERATURE( o C) Figure 2. On-Resistance Variation with Gate Voltage and Drain Current R (Ω) DS (on), DRANI-SOURCE ON-RESISTANCE 3.0 = 3V DRAIN-SOURCE CURRENT(A) Figure 4. On-Resistance Variation with Gate-Source Voltage R DS (on), (Ω) DRANI-SOURCE ON-RESISTANCE 3.0 = 50 ma 4V = 500 ma 4.5V 7V 8V 5V 9V 6V 10V GATE-SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature. DRAIN-SOURCE CURRENT(A) V DS = 10V T J = -25 o C 25 o C 75 o C 125 o C 150 o C Vth, Gate-Source Threshold Voltage (V) = 0.25 ma = 1 ma = V DS GATE-SOURCE VOLTAGE (V) T J. JUNCTION TEMPERATURE( o C) 2N7002DW Rev. A 3

4 Typical Performance Characteristics Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature I S Reverse Drain Current, [ma] = 0 V 25 o C 150 o C -55 o C V SD, Body Diode Forward Voltage [V] Figure 8. Power Derating P C [mw], POWER DISSIPATION T a [ o C], AMBIENT TEMPERATURE 2N7002DW Rev. A 4

5 Package Dimensions SC70-6 ( SOT-363 ) 2N7002DW Rev. A 5

6 TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CROSSVOLT CTL Current Transfer Logic EcoSPARK Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FPS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO i-lo IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak Motion-SPM OPTOLOGIC OPTOPLANAR PDP-SPM Power220 Power247 POWEREDGE Power-SPM PowerTrench Programmable Active Droop QFET QS QT Optoelectronics Quiet Series RapidConfigure SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire µserdes UHC UniFET VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 2N7002DW N-Channel Enhancement Mode Field Effect Transistor As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative or In Design First Production Full Production Not In Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30 2N7002DW Rev. A 6

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