FDP V, 80A, 2.7mΩ. N-Channel PowerTrench MOSFET. FDP8441 N-Channel PowerTrench MOSFET. Applications. Features.

Size: px

Start display at page:

Download "FDP V, 80A, 2.7mΩ. N-Channel PowerTrench MOSFET. FDP8441 N-Channel PowerTrench MOSFET. Applications. Features."

Oscar Lamb
5 years ago
Views:

1 M E N FDP844 N-Channel PowerTrench MOSFET 4V, 8A, 2.7mΩ Features Typ r DS(on) = 2.mΩ at V GS = V, I D = 8A Typ Q g() = 25nC at V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter / Alternator Distributed Power Architectures and VRMs September 26 tm RoHS Compliant Primary Switch for 2V Systems L E A D F R E E I MP L E TA TIO N 26 Fairchild Semiconductor Corporation

2 MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage 4 V V GS Gate to Source Voltage ±2 V I D Continuous (T amb = 25 o C, V GS = V, with R θja = 62 o C/W) 23 Drain Current Continuous (T C < 6 o C, V GS = V) 8 Pulsed See Figure 4 E AS Single Pulse Avalanche Energy (Note ) 947 mj Power dissipation 3 W P D Derate above 25 o C 2 W/ o C T J, T STG Operating and Storage Temperature -55 to 75 o C Thermal Characteristics R θjc Thermal Resistance Junction to Case.5 o C/W R θja Thermal Resistance Junction to Ambient (Note 2) 62 o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP844 FDP844 TO-22AB Tube N/A 5 units A Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 25µA, V GS = V V I DSS Zero Gate Voltage Drain Current V DS = 32V V GS = V - - T J = 5 C I GSS Gate to Source Leakage Current V GS = ±2V - - ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V DS = V GS, I D = 25µA V rds( on) Drain to Source On Resistance Dynamic Characteristics I D = 8A, V GS = V I D = 8A, V GS = V, T J = 75 C C iss Input Capacitance pf V DS = 25V, V GS = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf R G Gate Resistance V GS =.5V, f = MHz -. - Ω Q g(tot) Total Gate Charge at V V GS = to V Q g(th) Threshold Gate Charge V GS = to 2V V DD = 2V nc Q gs Gate to Source Gate Charge I D = 35A nc Q gs2 Gate Charge Threshold to Plateau I g = ma nc µa mω nc Q gd Gate to Drain Miller Charge nc 2

3 Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t (on) Turn-On Time ns t d(on) Turn-On Delay Time ns t r Turn-On Rise Time V DD = 2V, I D = 35A ns t d(off) Turn-Off Delay Time V GS = V, R GS =.5Ω ns t f Turn-Off Fall Time ns t off Turn-Off Time ns Drain-Source Diode Characteristics V SD Source to Drain Diode Voltage I SD = 35A V I SD = 5A -.8. V t rr Reverse Recovery Time I F = 35A, di/dt = A/µs ns Q rr Reverse Recovery Charge I F = 35A, di/dt = A/µs nc Notes: : Starting T J = 25 o C, L =.46mH, I AS = 64A. 2: Pulse width = s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q at: All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9 and QS9 quality systems certification. 3

4 Typical Characteristics POWER DISSIPATION MULIPLIER T C, CASE TEMPERATURE( o C) Figure. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, Z θjc 2.. DUTY CYCLE - DESCENDING ORDER D = Figure 2. CURRENT LIMITED BY PACKAGE T C, CASE TEMPERATURE( o C) V GS = V Maximum Continuous Drain Current vs Case Temperature NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θjc x R θjc + T C SINGLE PULSE E t, RECTANGULAR PULSE DURATION(s) P DM t t 2 Figure 3. Normalized Maximum Transient Thermal Impedance IDM, PEAK CURRENT (A) V GS = V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 75 - T C 25 5 SINGLE PULSE t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 4

5 Typical Characteristics 4 Figure 5. us us LIMITED BY PACKAGE ms OPERATION IN THIS SINGLE PULSE ms AREA MAY BE T J = MAX RATED LIMITED BY rds(on) T C = 25 o C DC. V DS, DRAIN TO SOURCE VOLTAGE (V) Forward Bias Safe Operating Area PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V DD = 5V T J = 75 o C T J = 25 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) IAS, AVALANCHE CURRENT (A) 5 If R = t AV = (L)(I AS )/(.3*RATED BV DSS - V DD ) If R t AV = (L/R)ln[(I AS *R)/(.3*RATED BV DSS - V DD ) +] STARTING T J = 5 o C STARTING T J = 25 o C.. 5 t AV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN754 and AN755 Figure 6. Unclamped Inductive Switching Capability V GS = V V GS = 5V V GS = 4.5V PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V GS = 4V V GS = 3.5V V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) T J = 25 o C PULSE DURATION = 8µs DUTY CYCLE =.5% MAX T J = 75 o C V GS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 8µs DUTY CYCLE =.5% MAX I D = 8A V GS = V T J, JUNCTION TEMPERATURE( o C) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure. Normalized Drain to Source On Resistance vs Junction Temperature 5

6 Typical Characteristics NORMALIZED GATE THRESHOLD VOLTAGE T J, JUNCTION TEMPERATURE( o C) Figure. CAPACITANCE (pf) 4 V GS = V DS I D = 25µA Normalized Gate Threshold Voltage vs Junction Temperature C rss C iss C oss f = MHz V GS = V. V DS, DRAIN TO SOURCE VOLTAGE (V) 5 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE I D = 25µA T J, JUNCTION TEMPERATURE ( o C) Figure 2. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) I D = 8A V DD = 2V V DD = 5V Q g, GATE CHARGE(nC) V DD = 25V Figure 3. Capacitance vs Drain to Source Voltage Figure 4. Gate Charge vs Gate to Source Voltage 6

7 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless Build it Now CoolFET CROSSVOLT DOME EcoSPARK E 2 CMOS EnSigna FACT FAST FASTr FPS FRFET FACT Quiet Series GlobalOptoisolator GTO HiSeC I 2 C i-lo ImpliedDisconnect IntelliMAX ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro Across the board. Around the world. The Power Franchise Programmable Active Droop OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TCM TinyBoost TinyBuck TinyPWM TinyPower TinyLogic TINYOPTO TruTranslation UHC UniFET UltraFET VCX Wire DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In This datasheet contains the design specifications for Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I2 7

FDP V, 80A, 3.1mΩ. N-Channel PowerTrench MOSFET. FDP8442 N-Channel PowerTrench MOSFET. Features. Applications. June 2007

FDP V, 80A, 3.1mΩ. N-Channel PowerTrench MOSFET. FDP8442 N-Channel PowerTrench MOSFET. Features. Applications. June 2007 M E N FDP8442 N-Channel PowerTrench MOSFET 4V, 8A, 3.mΩ Features Applications June 27 Typ r DS(on) = 2.3mΩ at V GS = V, I D = 8A Automotive Engine Control Typ Q g() = 8nC at V GS = V Powertrain Management