40V, 80A, 3.5mΩ. FDP8443_F085 N-Channel PowerTrench MOSFET. Applications. Features. March Automotive Engine Control

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1 FDP8443_F85 N-Channel PowerTrench MOSFET 4V, 8A, 3.5mΩ Features Applications Typ r DS(on) =.7mΩ at V GS = V, I D = 8A Automotive Engine Control Typ Q g() = 4nC at V GS = V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Q rr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / Alternator Qualified to AEC Q Distributed Power Architecture and VRMs RoHS Compliant Primary Switch for V Systems March 9 9 Fairchild Semiconductor Corporation

2 MOSFET Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage 4 V V GS Gate to Source Voltage ± V I D Continuous (T amb = 5 o C, V GS = V, with R θja = 6 o C/W) Drain Current Continuous (T C < 44 o C, V GS = V) 8 Pulsed See Figure 4 E AS Single Pulse Avalanche Energy (Note ) 53 mj Power Dissipation 88 W P D Derate above 5 o C.5 W/ o C T J, T STG Operating and Storage Temperature -55 to +75 o C Thermal Characteristics R θjc Thermal Resistance Junction to Case.8 o C/W R θja Thermal Resistance Junction to Ambient (Note ) 6 o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP8443 FDP8443_F85 TO-AB Tube N/A 5 units Electrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units A Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 5μA, V GS = V V I DSS Zero Gate Voltage Drain Current On Characteristics Dynamic Characteristics V DS = 3V, - - V GS = V T C = 5 o C I GSS Gate to Source Leakage Current V GS = ±V - - ± na V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 5μA.8 4 V r DS(on) Drain to Source On Resistance I D = 8A, V GS = V I D = 8A, V GS = V, T J = 75 o C C iss Input Capacitance pf V DS = 5V, V GS = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf R G Gate Resistance V GS =.5V, f = MHz Ω Q g(tot) Total Gate Charge at V V GS = to V Q g(th) Threshold Gate Charge V GS = to V V DD = V nc Q gs Gate to Source Gate Charge I D = 35A nc Q gs Gate Charge Threshold to Plateau I g = ma nc μa mω nc Q gd Gate to Drain Miller Charge nc

3 Electrical Characteristics T C = 5 o C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics (V GS = V) t on Turn-On Time ns t d(on) Turn-On Delay Time ns V DD = V, I D = 35A t r Rise Time ns V GS = V, R GS = Ω t d(off) Turn-Off Delay Time ns t f Fall Time ns t off Turn-Off Time ns Drain-Source Diode Characteristics I SD = 35A V SD Source to Drain Diode Voltage V I SD = 5A -.8. t rr Reverse Recovery Time ns I SD = 35A, di SD /dt = A/μs Q rr Reverse Recovery Charge nc Notes: : Starting T J = 5 o C, L =.6mH, I AS = 64A. : Pulse width = s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q at: All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9 and QS9 quality systems certification. 3

4 Typical Characteristics POWER DISSIPATION MULTIPLIER T C, CASE TEMPERATURE( o C) Figure. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, Z θjc.. DUTY CYCLE - DESCENDING ORDER D = SINGLE PULSE T C, CASE TEMPERATURE( o C) Figure. Maximum Continuous Drain Current vs Case Temperature E t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance CURRENT LIMITED BY PACKAGE P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C V GS = V IDM, PEAK CURRENT (A) 5 V GS = V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION T C = 5 o C FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 75 - T C 5 SINGLE PULSE t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 4

5 Typical Characteristics LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY rds(on) SINGLE PULSE TJ = MAX RATED TC = 5 o C us. V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V DD = 5V T J = -55 o C T J = 75 o C T J = 5 o C Figure 7. Transfer Characteristics us ms ms DC V GS, GATE TO SOURCE VOLTAGE (V) IAS, AVALANCHE CURRENT (A) 5 If R = t AV = (L)(I AS )/(.3*RATED BV DSS - V DD ) If R t AV = (L/R)ln[(I AS *R)/(.3*RATED BV DSS - V DD ) +] STARTING T J = 5 o C STARTING T J = 5 o C.. t AV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN754 and AN755 Figure 6. Unclamped Inductive Switching Capability V GS = V V GS = 5V PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V GS = 4.5V V GS = 4V Figure 8. Saturation Characteristics V DS, DRAIN TO SOURCE VOLTAGE (V) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) I D = 8A PULSE DURATION = 8μs DUTY CYCLE =.5% MAX T J = 5 o C T J = 75 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 8μs DUTY CYCLE =.5% MAX.8 I D = 8A V GS = V T J, JUNCTION TEMPERATURE( o C) Figure. Normalized Drain to Source On Resistance vs Junction Temperature 5

6 Typical Characteristics NORMALIZED GATE THRESHOLD VOLTAGE V GS = V DS I D = 5μA T J, JUNCTION TEMPERATURE( o C) Figure. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pf) f = MHz V GS = V C rss C oss C iss. V DS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE I D = ma T J, JUNCTION TEMPERATURE ( o C) Figure. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) ID = 35A V DD = V V DD = 5V Q g, GATE CHARGE(nC) V DD = 5V Figure 3. Capacitance vs Drain to Source Voltage Figure 4. Gate Charge vs Gate to Source Voltage 6

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