FDFMA2P857. Integrated P-Channel PowerTrench MOSFET and Schottky Diode. FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode
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1 FDFMAP87 Integrated P-Channel PowerTrench MOSFET and Schottky Diode 0V,.0A, 0mΩ Features MOSFET: Max r DS(on) = 0mΩ at V GS =.V, I D =.0A Max r DS(on) = 60mΩ at V GS =.V, I D =.A Max r DS(on) = 0mΩ at V GS =.8V, I D =.0A Schottky: V F < A Low profile mm maximum - in the new package MicroFET x mm RoHS Compliant MicroFET x MOSFET Maximum Ratings T A = C unless otherwise noted Thermal Characteristics Pin A NC D C G S General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET x package offers exceptional thermal performance for it s physical size and is well suited to linear mode applications. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 0 V V GSS Gate to Source Voltage ±8 V Drain Current -Continuous (Note a) I D -Pulsed 6 Power Dissipation (Note a). P D Power Dissipation (Note b) 0.7 T J, T STG Operating and Storage Junction Temperature Range to +0 C V RRM Schottky Repetitive Peak Reverse Voltage 0 V I O Schottky Average Forward Current A A NC D July 0 6 C G S A W FDFMAP87 Integrated P-Channel PowerTrench MOSFET and Schottky Diode R θja Thermal Resistance, Junction to Ambient (Note a) 86 R θja Thermal Resistance, Junction to Ambient (Note b) 7 R θja Thermal Resistance, Junction to Ambient (Note c) 86 R θja Thermal Resistance, Junction to Ambient (Note d) 0 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity.87 FDFMAP87 MicroFET x 7 8mm 000 units 008 Fairchild Semiconductor Corporation FDFMAP87 Rev.B
2 Electrical Characteristics T J = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 0μA, V GS = 0V 0 V ΔBV DSS Breakdown Voltage Temperature I ΔT J Coefficient D = 0μA, referenced to C mv/ C I DSS Zero Gate Voltage Drain Current V DS = 6V, V GS = 0V μa I GSS Gate to Source Leakage Current V GS = ±8V, V DS = 0V ±00 na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 0μA V ΔV GS(th) ΔT J r DS(on) Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance I D = 0μA, referenced to C mv/ C V GS =.V, I D =.0A 90 0 V GS =.V, I D =.A 0 60 V GS =.8V, I D =.0A 7 0 V GS =.V, I D =.0A, T J = C 8 60 g FS Forward Transconductance V DS = V, I D =.0A 7 S Dynamic Characteristics C iss Input Capacitance pf V DS = 0V, V GS = 0V, C oss Output Capacitance 80 pf f =.0MHz C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time 9 8 ns V DD = 0V, I D = A t r Rise Time 9 ns V GS =.V, R GEN = 6Ω t d(off) Turn-Off Delay Time 7 ns t f Fall Time 6 ns Q g(tot) Total Gate Charge V DS = 0V I D =.0A 6 nc Q gs Gate to Source Gate Charge V GS =.V 0.8 nc Q gd Gate to Drain Miller Charge 0.9 nc Drain-Source Diode Characteristics I S Maximum Continuous Drain-Source Diode Forward Current. A V SD Source to Drain Diode Forward Voltage V GS = 0V, I S =.A (Note ) 0.8. V t rr Reverse Recovery Time 7 ns I F =.0A, di/dt = 00A/μs Q rr Reverse Recovery Charge 6 nc mω FDFMAP87 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Schottky Diode Characteristics I R Reverse Leakage I R Reverse Leakage V F Forward Voltage V F Forward Voltage FDFMAP87 Rev.B V R = 0V V R = 0V I F = 00mA I F = A T J = C 0.. μa T J = 8 C ma T J = C ma T J = C. 8.0 μa T J = 8 C ma T J = C ma T J = C V T J = 8 C V T J = C V T J = C V T J = 8 C V T J = C V
3 Electrical Characteristics T A = C unless otherwise noted Notes: : R θja is determined with the device mounted on a in oz. copper pad on a. x. in. board of FR- material. R θjc is guaranteed by design while R θja is determined by the user's board design. (a) MOSFET R θja = 86 o C/W when mounted on a in pad of oz copper,. x. x 0.06 thick PCB. (b) MOSFET R θja = 7 o C/W when mounted on a minimum pad of oz copper. (c) Schottky R θja = 86 o C/W when mounted on a in pad of oz copper,. x. x 0.06 thick PCB. (d) Schottky R θja = 0 o C/W when mounted on a minimum pad of oz copper. a)86 o C/W when mounted on a in pad of oz copper. : Pulse Test: Pulse Width < 00μs, Duty cycle <.0%. b)7 o C/W when mounted on a minimum pad of oz copper. c)86 o C/W when mounted on a in pad of oz copper. d)0 o C/W when mounted on a minimum pad of oz copper. FDFMAP87 Integrated P-Channel PowerTrench MOSFET and Schottky Diode FDFMAP87 Rev.B
4 Typical Characteristics T A = C unless otherwise noted R DS(ON), NORMALIZED -ID, DRAIN CURRENT (A) DRAIN TO SOURCE ON-RESISTANCE -I D, DRAIN CURRENT (A) 6 VGS =-.V -.V Figure. -V -.V -V -.8V -.V -VDS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE On-Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) Figure. Normalized On- Resistance vs Junction Temperature 6 I D =-A V GS = -.V V DS = -V T A = o C - o C o C V GS, GATE TO SOURCE VOLTAGE (V) rds(on), DRAIN TO -IS, REVERSE DRAIN CURRENT (A) SOURCE ON-RESISTANCE (OHM) Figure. V GS =-.V -.8V T A = o C -.0V -.V -.0V -ID, DRAIN CURRENT(A) T A = o C -.V -.V I D =-.A V GS, GATE TO SOURCE VOLTAGE (V) V GS = 0V On-Resistance vs Gate to Source Voltage T A = o C - o C o C V SD, BODY DIODE FORWARD VOLTAGE (V) FDFMAP87 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Figure. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDFMAP87 Rev.B
5 Typical Characteristics T A = C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) ID, DRAIN CURRENT (A) IF, FORWARD CURRENT(A) I D = -A V DS = -V -0V -V 0 0 Q g, GATE CHARGE(nC) CAPACITANCE (pf) Ciss f = MHz V GS = 0V 00 Coss 00 C rss V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics RDS(ON) LIMITED V GS = -.V SINGLE PULSE R θja = 7 o C/W T A = o C Figure 9. Forward Bias Safe Operating Area 00us ms 0ms 00ms s 0s DC VDS, DRAIN to SOURCE VOLTAGE (V) T J = o C o C 8 o C V F, FORWARD VOLTAGE(mV) P(PK), PEAK TRANSIENT POWER (W) IR, REVERSE LEAKAGE CURRENT (ma) SINGLE PULSE R θja = 7 o C/W t, PULSE WIDTH (s) Figure 0. Single Pulse Maximum Power Dissipation T J = o C T J = 8 o C T J = o C V R, REVERSE VOLTAGE (V) FDFMAP87 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Figure. Schottky Diode Forward Current Figure. Schottky Diode Reverse Current FDFMAP87 Rev.B
6 Typical Characteristics T A = C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θja 0. DUTY CYCLE-DESCENDING ORDER D = SINGLE PULSE R θja = 7 o C/W t, RECTANGULAR PULSE DURATION (s) Figure. Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A FDFMAP87 Integrated P-Channel PowerTrench MOSFET and Schottky Diode FDFMAP87 Rev.B 6
7 Dimensional Outline and Pad Layout FDFMAP87 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: FDFMAP87 Rev.B 7
8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT - SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS 仙童 Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. tm FDFMAP87 Integrated P-Channel PowerTrench MOSFET and Schottky Diode PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed Obsolete FDFMAP87 Rev.B First Production Full Production Not In Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. 8 Rev. I68
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