Symbol Parameter Ratings Units V DSS Drain to Source Voltage 40 V V GS Gate to Source Voltage ±20 V Drain Current - Continuous (V
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1 FDB943_F85 N-Channel Power Trench MOSFET 4V, A,.2mΩ Features Typ r DS(on) = mω at V GS = V, I D = 8A Typ Q g(tot) = 64nC at V GS = V, I D = 8A UIS Capability RoHS Compliant Qualified to AEC Q Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/alternator Distributed Power Architectures and VRM Primary Switch for 2V Systems G S TO-263AB FDB SERIES D G Aug 22 D S FDB943_F85 N-Channel Power Trench MOSFET MOSFET Maximum Ratings T J = 25 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage 4 V V GS Gate to Source Voltage ±2 V Drain Current - Continuous (V I GS =) (Note ) T C = 25 C D Pulsed Drain Current T C = 25 C See Figure4 A E AS Single Pulse Avalanche Energy (Note 2) 968 mj Power Dissipation 333 W P D Derate above 25 o C 2.22 W/ o C T J, T STG Operating and Storage Temperature -55 to + 75 o C R θjc Thermal Resistance Junction to Case.45 o C/W R θja Maximum Thermal Resistance Junction to Ambient (Note 3) 43 o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB943 FDB943_F85 TO-263AB 33mm 24mm 8 units Notes:. Current is limited by bondwire configuration. Please see Fairchild AN for details on test method. 2: Starting T J = 25 C, L =.47mH, I AS = 64A, V DD = 4V during inductor charging and V DD = V during time in avalanche. 3: R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θja is determined by the user's board design. The maximum rating presented here is based on mounting on a in 2 pad of 2oz copper. 22 Fairchild Semiconductor Corporation FDB943_F85_F85 Rev. C
2 Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 25μA, V GS = V V V I DSS Drain to Source Leakage Current DS = 4V, T J = 25 o C - - μa V GS = V T J = 75 o C(Note 4) - - ma I GSS Gate to Source Leakage Current V GS = ±2V - - ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 25uA V r DS(on) Drain to Source On Resistance Dynamic Characteristics I D = 8A, V GS = V T J = 25 o C -..2 mω T J = 75 o C(Note 4) mω C iss Input Capacitance pf V DS = 25V, V GS = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf R g Gate Resistance f = MHz Ω Q g(tot) Total Gate Charge at V V GS = to V V DD = 2V nc Q g(th) Threshold Gate Charge V GS = to 2V I D = 8A nc Q gs Gate to Source Gate Charge nc Q gd Gate to Drain Miller Charge nc FDB943_F85 N-Channel Power Trench MOSFET Switching Characteristics t on Turn-On Time ns t d(on) Turn-On Delay Time ns t r Rise Time V DD = 2V, I D = 8A, ns t d(off) Turn-Off Delay Time V GS = V, R GS =.5Ω ns t f Fall Time ns t off Turn-Off Time ns Drain-Source Diode Characteristics V SD Source to Drain Diode Voltage I SD = 35A, V GS = V V ISD = 5A, V GS = V V T rr Reverse Recovery Time ns I F = 8A, di SD /dt = A/μs Q rr Reverse Recovery Charge nc Notes: 4: The maximum value is specified by design at TJ = 75 C. Product is not tested to this condition in production. FDB943_F85 Rev. C 2
3 Typical Characteristics POWER DISSIPATION MULTIPLIER T C, CASE TEMPERATURE( o C) Figure. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPED ANCE, ZθJC. DUTY CYCLE - DESCENDING ORDER D = SINGLE PULSE Figure 3. Figure 2. Maximum Continuous Drain Current vs Case Temperature ID, DRAIN CURRENT (A) t, RECTANGULAR PULSE DURATION(s) CURRENT LIMITED BY PACKAGE T C, CASE TEMPERATURE( o C) NOTE: Refer to Fairchild Application Notes AN9757 P DM t t 2 NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θja x R θja + T C Normalized Maximum Transient Thermal Impedance V GS = V CURRENT LIMITED BY SILICON FDB943_F85 N-Channel Power Trench MOSFET V GS = V IDM, PEAK CURRENT (A) T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I T C SINGLE PULSE t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability FDB943_F85 Rev. C 3
4 Typical Characteristics ID, DRAIN CURRENT (A) TC = 25 o C. Figure 5. I D, DRAIN CURRENT (A) OPERATION IN THIS AREA MAY BE LIMITED BY rds(on) SINGLE PULSE TJ = MAX RATED us ms ms DC Forward Bias Safe Operating Area PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V DD = 5V T J = 75 o C T J = 25 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) I AS, AVALANCHE CURRENT (A) If R = t AV = (L)(I AS )/(.3*RATED BV DSS - V DD ) If R t AV = (L/R)ln[(I AS *R)/(.3*RATED BV DSS - V DD ) +] STARTING T J = 5 o C STARTING T J = 25 o C E-3.. t AV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN754 and AN755 Figure 6. Unclamped Inductive Switching Capability I S, REVERSE DRAIN CURRENT (A) 2 V GS = V T J = 75 o C T J = 25 o C V SD, BODY DIODE FORWARD VOLTAGE (V) FDB943_F85 N-Channel Power Trench MOSFET Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics I D, DRAIN CURRENT (A) 2 5 V GS 5V Top V 6V 5.5V 5 V Bottom 5V 5 8μs PULSE WIDTH Tj=25 o C I D, DRAIN CURRENT (A) 2 5 5V V GS 5V 5.5V Top V 6V 5.5V 5V Bottom 5 8μs PULSE WIDTH Tj=75 o C Figure 9. Saturation Characteristics Figure. Saturation Characteristics FDB943_F85 Rev. C 4
5 Typical Characteristics r DS(on), DRAIN TO SOURCE ON-RESISTANCE (Ω) NORMALIZED GATE THRESHOLD VOLTAGE I D = 8A T J = 25 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure. PULSE DURATION = 8μs DUTY CYCLE =.5% MAX T J = 75 o C Rdson vs Gate Voltage V GS = V DS I D = 25μA T J, JUNCTION TEMPERATURE( o C) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE PULSE DURATION = 8μs DUTY CYCLE =.5% MAX I D = 8A V GS = V T J, JUNCTION TEMPERATURE( o C) Figure 2. Normalized Rdson vs Junction Temperature I D = ma T J, JUNCTION TEMPERATURE ( o C) FDB943_F85 N-Channel Power Trench MOSFET Figure 3. Normalized Gate Threshold Voltage vs Temperature Figure 4. Normalized Drain to Source Breakdown Voltage vs Junction Temperature CAPACITANCE (pf) f = MHz V GS = V C rss C iss C oss. V GS, GATE TO SOURCE VOLTAGE(V) ID = 8A V DD = 2V V DD = 6V V DD = 24V Q g, GATE CHARGE(nC) Figure 5. Capacitance vs Drain to Source Voltage Figure 6. Gate Charge vs Gate to Source Voltage FDB943_F85 Rev. C 5
6 tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. The Power Franchise 2Cool AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green Bridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM mwsaver OptoHiT OPTOLOGIC OPTOPLANAR tm PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS FDB943_F85 N-Channel Power Trench MOSFET DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed Obsolete First Production Full Production Not In Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I6 FDB943_F85 Rev. C 6
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