Features. Symbol Parameter FQPF15P12 Unit V DSS Drain-Source Voltage -120 V I D Drain Current - Continuous (T C = 25 C) -15 * A

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1 FQPF15P12 P-Channel QFET MOSFET -120 V, -15 A, 0.2 Ω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. August 2013 Features -15 A, -120 V, R DS(on) = 0.2 Ω =-10 V, I D = -7.5 A Low Gate Charge (Typ. 29 nc) Low Crss (Typ. 110 pf) 100% Avalanche Tested 175 C Maximum Junction Temperature Rating S! G! G D S TO-220F! D Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter FQPF15P12 Unit S Drain-Source Voltage -120 V I D Drain Current - Continuous (T C = 25 C) -15 * A Maximum lead temperature for soldering purposes, T L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics - Continuous (T C = 100 C) * A I DM Drain Current - Pulsed (Note 1) -60 * A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 1157 mj I AR Avalanche Current (Note 1) -15 A E AR Repetitive Avalanche Energy (Note 1) 10 mj dv/dt Peak Diode Recovery dv/dt (Note 3) -5.0 V/ns P D Power Dissipation (T C = 25 C) 41 W - Derate above 25 C 0.27 W/ C T J, T STG Operating and Storage Temperature Range -55 to +175 C 300 C Symbol Parameter FQPF15P12 Unit R θjc Thermal Resistance, Junction-to-Case, Max C/W R θjs Thermal Resistance, Case-to-Sink, Max. -- C/W R θja Thermal Resistance, Junction-to-Ambient, Max C/W

2 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 250 µa V BS Breakdown Voltage Temperature / T J Coefficient I D = -250 µa, Referenced to 25 C V/ C I DSS = -120 V, = 0 V µa Zero Gate Voltage Drain Current = -96 V, T C = 150 C µa I GSSF Gate-Body Leakage Current, Forward = -30 V, = 0 V na I GSSR Gate-Body Leakage Current, Reverse = 30 V, = 0 V na On Characteristics (th) Gate Threshold Voltage =, I D = -250 µa V R DS(on) Static Drain-Source V On-Resistance GS = -10 V, I D = -7.5 A Ω g FS Forward Transconductance = -40 V, I D = -7.5 A S Dynamic Characteristics C iss Input Capacitance = -25 V, = 0 V, pf C oss Output Capacitance f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns = -60 V, I D = -15 A, t r Turn-On Rise Time R G = 25 Ω ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4) ns Q g Total Gate Charge = -96 V, I D = -15 A, nc Q gs Gate-Source Charge = -10 V nc Q gd Gate-Drain Charge (Note 4) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = 0 V, I S = -15 A V t rr Reverse Recovery Time = 0 V, I S = -15 A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 6.0mH, I AS = -15A, = -50V, R G = 25 Ω, Starting T J = 25 C 3. I SD -15A, di/dt 300A/µs, BS, Starting T J = 25 C 4. Essentially independent of operating temperature

3 Typical Characteristics -I D, Drain Current [A] 10 2 Top : V V -8.0 V -7.0 V -6.0 V V -5.0 V Bottom : -4.5 V , Drain-Source Voltage [V] μ s Pulse Test 2. T C = 25 Figure 1. On-Region Characteristics -I D, Drain Current [A] o C 25 o C -55 o C 1. = -40V μ s Pulse Test , Gate-Source Voltage [V] Figure 2. Transfer Characteristics R DS(ON) [Ω ], Drain-Source On-Resistance = -10V = -20V Note : T J = I D, Drain Current [A] -I DR, Reverse Drain Current [A] = 0V μ s Pulse Test V SD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitance [pf] C oss C iss C rss , Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ; 1. = 0 V 2. f = 1 MHz -, Gate-Source Voltage [V] = -30V = -60V = -96V Note : I D = -15A Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4 Typical Characteristics (Continued) -BS, (Normalized) Drain-Source Breakdown Voltage = 0 V 2. I D = -250 μ A T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature R DS(ON), (Normalized) Drain-Source On-Resistance = -10 V 2. I D = -7.5 A T J, Junction Temperature [ o C] Figure 8. On-Resistance Variation vs Temperature 10 2 Operation in This Area is Limited by R DS(on) 20 -I D, Drain Current [A] , Drain-Source Voltage [V] DC 10 ms 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse 1 ms 100 µs -I D, Drain Current [A] T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Z (t), Thermal Response θ JC Z θ JC (t) = /W M ax. 2. Duty Factor, D =t 1 /t T JM - T C = P DM * Z θ JC (t) D= single pulse P DM t 1 t t 1, S q ua re W ave P ul se D urati on [sec] Figure 11. Transient Thermal Response Curve

5 12V 200nF -3mA 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT DUT -10V Q gs Q g Q gd Charge Resistive Switching Test Circuit & Waveforms R L t on t off t d(on) t r t d(off) tf R G 10% -10V DUT 90% Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI 2 2 AS BS BS - I D t p Time R G I D (t) (t) -10V DUT I AS t p BS

6 Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT _ I SD Driver R G Compliment of DUT (N-Channel) L dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 10V I SD ( DUT ) ( DUT ) Body Diode Reverse Current V SD I RM di/dt I FM, Body Diode Forward Current Body Diode Forward Voltage Drop Body Diode Recovery dv/dt

7 Mechanical Dimensions TO-220F TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: Dimensions in Millimeters

8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM Green Bridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR tm PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed Obsolete First Production Full Production Not In Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64

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