FDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features

Transcription

1 FDD4685 V P-Channel PowerTrench MOSFET V, 32A, 27mΩ Features Max r DS(on) = 27mΩ at V GS = 0V, I D = 8.4A Max r DS(on) = 35mΩ at V GS = 4.5V, I D = 7A High performance trench technology for extremely low r DS(on) RoHS Compliant General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to deliver low r DS(on) and good switching characteristic offering superior performance in application. Application Inverter Power Supplies S March 205 G D G S D-PAK TO-252 (TO-252) D MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage V V GS Gate to Source Voltage ±20 V I D Thermal Characteristics Drain Current -Continuous(Package Limited) T C = 25 C 32 -Continuous(Silicon Limited) T C = 25 C (Note ) -Continuous T A = 25 C (Note a) 8.4 -Pulsed 00 E AS Drain-Source Avalanche Energy (Note 3) 2 mj Power Dissipation T P C = 25 C 69 D Power Dissipation (Note a) 3 T J, T STG Operating and Storage Junction Temperature Range 55 to +50 C A W R θjc Thermal Resistance, Junction to Case.8 R θja Thermal Resistance, Junction to Ambient (Note a) Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDD4685 FDD4685 D-PAK(TO-252) 3 6mm 2500 units 2006 Fairchild Semiconductor Corporation

2 Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250µA, V GS = 0V V BV DSS Breakdown Voltage Temperature I T J Coefficient D = 250µA, referenced to 25 C 33 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 32V, V GS = 0V µa I GSS Gate to Source Leakage Current V GS = ±20V, V GS = 0V ±00 na On Characteristics (Note 2) V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 250µA.6 3 V V GS(th) T J r DS(on) Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance I D = 250µA, referenced to 25 C 4.9 mv/ C V GS = 0V, I D = 8.4A V GS = 4.5V, I D = 7A V GS = 0V, I D = 8.4A, T J =25 C g FS Forward Transconductance V DS = 5V, I D = 8.4A 23 S Dynamic Characteristics C iss Input Capacitance pf V DS = 20V, V GS = 0V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance 205 pf R g Gate Resistance f = MHz 4 Ω mω Switching Characteristics t d(on) Turn-On Delay Time 8 6 ns V DD = 20V, I D = 8.4A t r Rise Time 5 27 ns V GS = 0V, R GEN = 6Ω t d(off) Turn-Off Delay Time ns t f Fall Time 4 26 ns Q g(tot) Total Gate Charge V DD = 20V, I D = 8.4A 9 27 nc Q gs Gate to Source Gate Charge V GS = 5V 5.6 nc Q gd Gate to Drain Miller Charge 6. nc Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = 0V, I S = 8.4A (Note 2) V t rr Reverse Recovery Time ns I F = 8.4A, di/dt = 00A/µs Q rr Reverse Recovery Charge 3 47 nc Notes: : R θja is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θja is determined by the user s board design. a. C/W when mounted on a in 2 pad of 2 oz copper b. 96 C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting T J = 25 C, L = 3mH, I AS = 9A, V DD = V, V GS = 0V. 2

3 Typical Characteristics T J = 25 C unless otherwise noted -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX V GS = -3V V DS, DRAIN TO SOURCE VOLTAGE (V) Figure I D =-8.4A V GS = -6V V GS = -4.5V V GS = -4V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE I D, DRAIN CURRENT(A) On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized On Resistance vs Junction Temperature rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) Figure 4. V GS = -3V V GS = -4V V GS = -4.5V I D = -8.4A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX V GS = -6V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX T J = 25 o C T J = 25 o C V GS, GATE TO SOURCE VOLTAGE (V) On-Resistance vs Gate to Source Voltage -I D, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX T J = 50 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics T J = 25 o C -IS, REVERSE DRAIN CURRENT (A) 0 V GS = 0V T J = 50 o C T J = -55 o C T J = 25 o C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3

4 Typical Characteristics T J = 25 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -IAS, AVALANCHE CURRENT(A) Q g, GATE CHARGE(nC) Figure V DD = -0V V DD = -30V V DD = -20V V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage T J = 25 o C T J = 25 o C t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) -I D, DRAIN CURRENT (A) f = MHz V GS = 0V Limited by Package C iss C oss C rss V GS = -4.5V R θjc =.8 o C/W T C, CASE TEMPERATURE ( o C) 50 Figure 9. Unclamped Inductive Switching Capability Figure 0. Maximum Continuous Drain Current vs Case Temperature -ID, DRAIN CURRENT (A) ms OPERATION IN THIS SINGLE PULSE AREA MAY BE TJ = MAX RATED DC LIMITED BY r DS(on) T C = 25 O C VDS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area 00us 0ms P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE I = I t, PULSE WIDTH (s) FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: 50 T c Figure 2. Single Pulse Maximum Power Dissipation T c = 25 o C 4

5 Typical Characteristics T J = 25 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc DUTY CYCLE-DESCENDING ORDER D = SINGLE PULSE E t, RECTANGULAR PULSE DURATION (s) Figure 3. Transient Thermal Response Curve P DM t t 2 NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θjc x R θjc + T C 5

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