FGD V, PDP IGBT

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1 FGD V, PDP IGBT Features High Current Capability Low Saturation Voltage: V CE (sat) =.59 I C = 5 A High Input Impedance Fast Switching RoHS Compliant Application PDP System General Description March 2 Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. FGD V, PDP IGBT C G E D-PAK Absolute Maximum Ratings Symbol Description Ratings Units V CES Collector to Emitter Voltage 36 V V GES Gate to Emitter Voltage ± 3 V I C pulse()* Pulsed Collector 22 A P D Maximum Power 25 W Maximum Power T C = o C 5 W T J Operating Junction Temperature -55 to +5 o C T stg Storage Temperature Range -55 to +5 o C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 o C Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction to Case -. o C/W R θja Thermal Resistance, Junction to Ambient o C/W Notes: () Half Sine Wave, D <., pluse width < µsec * Ic_pluse limited by max Tj 2 Fairchild Semiconductor Corporation

2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGD4536 FGD4536TM TO252 38mm 6mm - Electrical Characteristics of the IGBT T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = V, I C = 25µA V BV CES T J Temperature Coefficient of Breakdown Voltage V GE = V, I C = 25µA V/ o C I CES Collector Cut-Off Current V CE = V CES, V GE = V - - µa I GES G-E Leakage Current V GE = V GES, V CE = V - - ±4 na FGD V, PDP IGBT On Characteristics V GE(th) G-E Threshold Voltage I C = 25µA, V CE = V GE V I C = 2A, V GE = 5V V V CE(sat) Collector to Emitter Saturation Voltage I C = 3A, V GE = 5V V I C = 5A, V GE = 5V, I C = 5A, V GE = 5V, V V Dynamic Characteristics C ies Input Capacitance pf C oes Output Capacitance V CE = 3V, V GE = V, f = MHz pf C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time V CC = 2V, I C = 2A, R G = 5Ω, V GE = 5V, ns t d(off) Turn-Off Delay Time Resistive Load, ns t f Fall Time ns t d(on) Turn-On Delay Time ns t r Rise Time V CC = 2V, I C = 2A, R G = 5Ω, V GE = 5V, ns t d(off) Turn-Off Delay Time Resistive Load, ns t f Fall Time ns Q g Total Gate Charge nc V CE = 2V, I C = 2A, Q ge Gate to Emitter Charge V GE = 5V nc Q gc Gate to Collector Charge nc 2

3 Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, IC [A] 2V 2V T 2 C = 25 o C 5V V 5 V GE = 8V 5 Figure 2. Typical Output Characteristics Collector Current, IC [A] 2 2V T C = 25 o 5V C 2V 5 V V GE = 8V 5 FGD V, PDP IGBT Figure 3. Typical Saturation Voltage Characteristics Figure 4. Transfer Characteristics Collector Current, IC [A] 2 V GE = 5V 5 5 Collector Current, I C [A] 2 V CE = V Gate-Emitter Voltage,V GE [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] A 3A I C = 2A. V GE = 5V Collector-EmitterCase Temperature, T C [ o C] Figure 6. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] I C = 2A 5A 3A Gate-Emitter Voltage, V GE [V] 3

4 Typical Performance Characteristics Figure 7. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] I C = 2A 5A 3A Gate-Emitter Voltage, V GE [V] Figure 8. Capacitance Characteristics Capacitance [pf] V GE = V, f = MHz C ies C oes C res. 3 FGD V, PDP IGBT Figure 9. Gate charge Characteristics 5 Figure. SOA Characteristics 5 Gate-Emitter Voltage, VGE [V] V CC = V 2V Gate Charge, Q g [nc] Collector Current, Ic [A]. Single Nonrepetitive Pulse Curves must be derated linearly with increase in temperature µs µs ms DC.. Figure. Turn-on Characteristics vs. Figure 2. Turn-off Characteristics vs. Gate Resistance Gate Resistance t f Switching Time [ns] t r t d(on) V CC = 2V, V GE = 5V I C = 2A Gate Resistance, R G [Ω] Switching Time [ns] t d(off) V CC = 2V, V GE = 5V I C = 2A Gate Resistance, R G [Ω] 4

5 Typical Performance Characteristics Figure 3. Turn-on Characteristics vs. Collector Current Switching Time [ns] t r t d(on) V GE = 5V, R G = 5Ω Collector Current, I C [A] Figure 4. Turn-off Characteristics vs. Collector Current Switching Time [ns] 4 V GE = 5V, R G = 5Ω Collector Current, I C [A] t f t d(off) FGD V, PDP IGBT Figure 5. Switching Loss vs. Gate Resistance Switching Loss [uj] 5 V CC = 2V, V GE = 5V I C = 2A T C = 25 o C E off E on Gate Resistance, R G [Ω] Figure 6. Switching Loss vs. Collector Current Switching Loss [uj] E off E on V GE = 5V, R G = 5Ω T C = 25 o C Collector Current, I C [A] Figure 7. Turn off Switching SOA Characteristics 5 Collector Current, IC [A] Safe Operating Area V GE = 5V,

6 Typical Performance Characteristics Thermal Response [Zthjc] 2. Figure 8.Transient Thermal Impedance of IGBT single pulse P DM t t 2 Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C FGD V, PDP IGBT Rectangular Pulse Duration [sec] 6

7 Mechanical Dimensions D-PAK FGD V, PDP IGBT Dimensions in Millimeters 7

8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM OptiHiT OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. The Power Franchise The Right Technology for Your Success TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * µserdes UHC Ultra FRFET UniFET VCX VisualMax XS FGD V, PDP IGBT DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed Obsolete First Production Full Production Not In Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. 8 Rev. I5

9 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FGD4536TM

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