FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT
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1 FGL6NBNTD V, 6 A NPT Trench IGBT Features High Speed Switching Low Saturation Voltage: V CE(sat) = 2.5 = 6 A High Input Impedance Built-in Fast Recovery Diode Applications UPS, Welder General Description March 214 Using Fairchild's proprietary trench design and advanced NPT technology, the V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications. G C FGL6NBNTD V, 6 A NPT Trench IGBT G C E TO-264 3L E Absolute Maximum Ratings Symbol Description Ratings Unit V CES Collector to Emitter Voltage V S Gate to Emitter Voltage 25 V Collector = o C 42 A Collector = 25 o C 6 A M (1) Pulsed Collector = 25 o C 2 A I F Diode Continuous Forward = o C 15 A P D Maximum Power = 25 o C 18 W Maximum Power = o C 72 W T J Operating Junction Temperature -55 to +15 o C T stg Storage Temperature Range -55 to +15 o C T L Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds 3 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Ratings Unit R JC (IGBT) Thermal Resistance, Junction to Case.69 o C/W R JC (Diode) Thermal Resistance, Junction to Case 2.8 o C/W R JA Thermal Resistance, Junction to Ambient 25 o C/W 2 Fairchild Semiconductor Corporation 1 FGL6NBNTD Rev. C2
2 Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGL6NBNTD FGL6NBNTD TO-264 Tube N/A N/A 3 Electrical Characteristics of the IGBT = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV CES Collector to Emitter Breakdown Voltage = V, = 1 ma - - V ES Collector Cut-Off Current V CE = V CES, = V ma I GES G-E Leakage Current = S, V CE = V - - ±5 na On Characteristics (th) G-E Threshold Voltage = 6 ma, V CE = V = A, = 15 V V V CE(sat) Collector to Emitter Saturation Voltage = 6 A, = 15 V, V Dynamic Characteristics C ies Input Capacitance pf C oes Output Capacitance V CE = V, = V, f = 1MHz pf C res Reverse Transfer Capacitance pf FGL6NBNTD V, 6 A NPT Trench IGBT Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time V CC = 6 V, = 6 A, R G = 51, = 15 V, ns t d(off) Turn-Off Delay Time Inductive Load, = 25 o C ns t f Fall Time ns Q g Total Gate Charge nc Q ge Gate to Emitter Charge V CE = 6 V, = 6 A, = 15 V, = 25 o C nc Q gc Gate to Collector Charge nc Electrical Characteristics of the Diode = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max Unit V FM Diode Forward Voltage I F = 15 A V I F = 6 A V t rr Diode Reverse Recovery Time I F = 6 A, di/dt = 2 A/us us I R Instantaneous V RRM = V ua 2 Fairchild Semiconductor Corporation 2 FGL6NBNTD Rev. C2
3 Typical Performance Characteristics Figure 1. Typical Output Characteristics Collector Current, V 15V V 9V = 6V Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 3 2 VCE Voltage, =15VCollector-Emitter 8A 6A 3A 8V 7V Figure 2. Typical Saturation Voltage Characteristics Collector Current, = 15V = = Figure 4. Saturation Voltage vs ACollector-Emitter Voltage, VCE 6A 8A = - 4 O C FGL6NBNTD V, 6 A NPT Trench IGBT =A Case Temperature, [ ] 2 =A Gate-Emitter Voltage, Figure 5. Saturation Voltage vs. Figure 6. Saturation Voltage vs. = A 6A 8A = A A 6A 8A = A Gate-Emitter Voltage, Gate-Emitter Voltage, 2 Fairchild Semiconductor Corporation 3 FGL6NBNTD Rev. C2
4 Typical Performance Characteristics TdoffSwitching Time [ns] Figure 7. Capacitance Characteristics Capacitance [pf] = V, f = 1MHz Figure 9. Switching Characteristics vs. Collector Current V CC =6V, Rg=51Ω =± 15V, =25 Cies Coes Cres Figure 8. Switching Loss vs. Gate Resistance V CC =6V, =6A =? 5V =25 o C Gate Resistance, R G [? ] Tdoff Tdon Figure. Gate Charge Characteristics 2 15 V CC =6V, R L = Ω =25 Gate-Emitter Voltage,VGE Tr TfSwitching Time [ns] FGL6NBNTD V, 6 A NPT Trench IGBT Tf Tr Tdon Collector Current, Gate Charge, Q g [nc] Figure 11. SOA Characteristics Figure 12. Forward Characteristics Collector Current, MAX. (Pulsed) MAX. (Continuous) DC Operation 1ms us 5us 1 Single Nonrepetitive Pulse Curve must be darated linearly with increase in temperature.1 1 Forward Current, I F = = Forward Voltage, V FM 2 Fairchild Semiconductor Corporation 4 FGL6NBNTD Rev. C2
5 Typical Performance Characteristics Figure 13. Reverse Recovery Characteristics vs. di/dt Reverse Recovery Time, t rr [us] I rr t rr I F =6A =25? di/dt [A/us] Figure 15. Reverse Current vs. Reverse Voltage Reverse Recovery Current I rr Figure 14. Reverse Recovery Characteristics vs. Forward Current Reverse Recovery Time, t rr [us] Figure 16. Junction Capacitance 25 t rr I rr Forward Current, I F di/dt=-2a/us =25? = Reverse Recovery Current I rr FGL6NBNTD V, 6 A NPT Trench IGBT Reverse Current, I R [ua] = 15 = 25 Capacitance, C j [pf] E Reverse Voltage, V R.1 1 Reverse Voltage, V R Figure 17.Transient Thermal Impedance of IGBT 1 Thermal Response, Z [ /W] THJC P DM t 1 t 2 1 E - 3 s in g le p u ls e R e c ta n g u la r P u ls e D u r a t io n [ s e c ] 2 Fairchild Semiconductor Corporation 5 FGL6NBNTD Rev. C2
6 Mechanical Dimensions FGL6NBNTD V, 6 A NPT Trench IGBT Figure 18. TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: 2 Fairchild Semiconductor Corporation 6 FGL6NBNTD Rev. C2
7 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS FGL6NBNTD V, 6 A NPT Trench IGBT *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 2 Fairchild Semiconductor Corporation FGL6NBNTD Rev. C2 7
8 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FGL6NBNTD FGL6NBNTDTU
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