FGH60N60SFD 600V, 60A Field Stop IGBT

Transcription

1 FGH6N6SFD 6V, 6A Field Stop IGBT Features High current capability Low saturation voltage: V CE(sat) I C = 6A High input impedance Fast switching RoHS compliant Applications Induction Heating, UPS, SMPS, PFC General Description August 28 tm Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. E C G C G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Units V CES Collector to Emitter Voltage 6 V V GES Gate to Emitter Voltage ± 2 V I C Collector 2 A Collector T C = o C 6 A I CM () Pulsed Collector 8 A P D Maximum Power 378 W Maximum Power T C = o C 5 W T J Operating Junction Temperature -55 to +5 o C T stg Storage Temperature Range -55 to +5 o C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 o C Notes: : Repetitive test, Pulse width limited by max. juntion temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction to Case -.33 o C/W R θjc (Diode) Thermal Resistance, Junction to Case -. o C/W R θja Thermal Resistance, Junction to Ambient - 4 o C/W 28 Fairchild Semiconductor Corporation

2 Package Marking and Ordering Information Packaging Max Qty Device Marking Device Package Type Qty per Tube per Box FGH6N6SFD FGH6N6SFDTU TO-247 Tube 3ea - Electrical Characteristics of the IGBT T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = V, I C = 25µA V BV CES T J Temperature Coefficient of Breakdown Voltage V GE = V, I C = 25µA V/ o C I CES Collector Cut-Off Current V CE = V CES, V GE = V µa I GES G-E Leakage Current V GE = V GES, V CE = V - - ±4 na On Characteristics V GE(th) G-E Threshold Voltage I C = 25µA, V CE = V GE V V CE(sat) Collector to Emitter Saturation Voltage I C = 6A, V GE = 5V V I C = 6A, V GE = 5V, V Dynamic Characteristics C ies Input Capacitance pf C oes Output Capacitance V CE = 3V, V GE = V, f = MHz pf C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 4V, I C = 6A, ns t f Fall Time R G = 5Ω, V GE = 5V, ns E on Turn-On Switching Loss Inductive Load, mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 4V, I C = 6A, ns t f Fall Time R G = 5Ω, V GE = 5V, ns E on Turn-On Switching Loss Inductive Load, mj E off Turn-Off Switching Loss -. - mj E ts Total Switching Loss mj Q g Total Gate Charge nc Q ge Gate to Emitter Charge V CE = 4V, I C = 6A, V GE = 5V nc Q gc Gate to Collector Charge nc 2

3 Electrical Characteristics of the Diode T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max Units V FM Diode Forward Voltage I F = 3A V t rr Diode Reverse Recovery Time ns I ES = 3A, di ES /dt = 2A/µs Q rr Diode Reverse Recovery Charge nc

4 Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, IC [A] V 2V 5V V V GE = 8V Figure 2. Typical Output Characteristics Collector Current, IC [A] V 2V 5V V V GE = 8V Figure 3. Typical Saturation Voltage Characteristics Collector Current, IC [A] V GE = 5V Collector Current, I C [A] Figure 4. Transfer Characteristics V CE = 2V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] V GE = 5V 2A 6A I C = 3A Collector-EmitterCase Temperature, T C [ o C] Gate-Emitter Voltage,V GE [V] Figure 6. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] A I C = 3A 2A T C = -4 o C Gate-Emitter Voltage, V GE [V] 4

5 Typical Performance Characteristics Figure 7. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] A 4 6A I C = 3A Gate-Emitter Voltage, V GE [V] Figure 8. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] A I C = 3A 2A Gate-Emitter Voltage, V GE [V] Figure 9. Capacitance Characteristics Capacitance [pf] C ies C oes C res V GE = V, f = MHz Figure. Gate charge Characteristics Gate-Emitter Voltage, VGE [V] V V CC = V 2V Figure. SOA Characteristics Gate Charge, Q g [nc] Figure 2. Turn off Switching SOA Characteristics 3 Collector Current, Ic [A] Single Nonrepetitive µs ms ms Pulse T. C = 25 o C Curves must be derated linearly with increase in temperature. DC µs Collector Current, IC [A] Safe Operating Area V GE = 5V, 5

6 Typical Performance Characteristics Figure 3. Turn-on Characteristics vs. Gate Resistance Switching Time [ns] 3 t r t d(on) V CC = 4V, V GE = 5V I C = 6A Gate Resistance, R G [Ω] Switching Time [ns] Figure 4. Turn-off Characteristics vs. Gate Resistance 6 V CC = 4V, V GE = 5V I C = 6A t d(off) Gate Resistance, R G [Ω] t f Figure 5. Turn-on Characteristics vs. Collector Current Switching Time [ns] 5 V GE = 5V, R G = 5Ω t r t d(on) Switching Time [ns] Figure 6. Turn-off Characteristics vs. Collector Current V GE = 5V, R G = 5Ω T C = 25 o C t d(off) t f Collector Current, I C [A] Figure 7. Switching Loss vs Gate Resistance Switching Loss [mj] 2 V CC = 4V, V GE = 5V I C = 6A E on E off Collector Current, I C [A] Figure 8. Switching Loss vs Collector Current Switching Loss [mj] 3 V GE = 5V, R G = 5Ω T C = 25 o C E on E off Gate Resistance, R G [Ω] Collector Current, I C [A] 6

7 Typical Performance Characteristics Figure 9. Forward Characteristics Forward Current, IF [A] 2 T J = 25 o C T J = 25 o C T J = 75 o C Forward Voltage, V F [V] Reverse Current, I R [µa] Figure 2. Reverse Current 5. T C = 75 o C Reverse Voltage, V R [V] Figure 2. Stored Charge 5 Figure 22. Reverse Recovery Time 6 Reverse Current, I R [µa]. T C = 75 o C Reverse Recovery Time, trr [ns] 5 4 2A/µs di/dt = A/µs Reverse Voltage, V R [V] Forward Current, I F [A] Figure 23. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] single pulse t 2 Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C E-3 E-5 E-4 E-3.. Rectangular Pulse Duration [sec] P DM t 7

8 Mechanical Dimensions TO-247AB (FKS PKG CODE ) Dimensions in Millimeters 8

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