2N6520 PNP Epitaxial Silicon Transistor

Transcription

1 2N6520 PNP Epitaxial Silicon Transistor Features High oltage Transistor Collector-Emitter oltage: CBO = -350 Collector Dissipation: P C (max)=625mw Complement to 2N6517 Absolute Maximum Ratings* T A = 25 C unless otherwise noted June TO Emitter 2. Base 3. Collector Symbol Parameter alue Unit CBO Collector-Base oltage -350 CEO Collector-Emitter oltage -350 EBO Emitter-Base oltage -5 Collector Current -500 ma I B Base Current -250 ma P C Collector Power Dissipation W Derate above 25 C 5 mw/ C T J Junction Temperature 150 C T STG Storage Temperature -55 to +150 C 2N6520 Rev. B1 1

2 Electrical Characteristics T A =25 C unless otherwise noted Symbol Parameter Test Conditions Min. Max. Units B CBO Collector-Base Breakdown oltage = -μa, I E =0-350 B CEO * Collector-Emitter Breakdown oltage = -1mA, I B =0-350 B EBO Emitter-Base Breakdown oltage I E = -μa, =0-5 BO Collector Cut-off Current CB = -250, I E =0-50 na I EBO Emitter Cut-off Current EB = -4, =0-50 na h FE * DC Current Gain CE = -, = -1mA CE = -, = -ma CE = -, = -30mA CE = -, = -50mA CE = -, = -ma CE (sat) Collector-Emitter Saturation oltage = -ma, I B = -1mA = -20mA, I B = -2mA = -30mA, I B = -3mA = -50mA, I B = -5mA BE (sat) Base-Emitter Saturation oltage = -ma, I B = -1mA = -20mA, I B = -2mA = -30mA, I B = -3mA * Pulse Test: Pulse Width 300μs, Duty Cycle 2% BE (on) Base-Emitter On oltage CE = -, = -ma -2 f T * Current Gain Bandwidth Product CE = -20, = -ma, f=20mhz MHz C ob Output Capacitance CB = -20, I E =0, f=1mhz 6 pf C EB Emitter-Base Capacitance EB = -0.5, =0, f=1mhz pf t ON Turn On Time BE (off)= -2, CC = ns = -50mA, I B1 = -ma t OFF Turn Off Time CC = -, = -50mA I B1 =I B2 = -ma 3.5 ns 2N6520 Rev. B1 2

3 Typical Performance Characteristics hfe, DC CURRENT GAIN 0 CE = IC Figure 1. DC current Gain BE (sat), CE (sat)[m], SATURATION OLTAGE = I B CE (sat) BE (sat) Figure 2. Base-Emitter Saturation oltage Collector-Emitter Saturation oltage 0 t BE (off)=-2.0 CE (off) = - 0 tstg /I B = 5 T J =25 o C CE(off) = - t[ns],time t R t[ns],time tf IC/IB= 5 IB1 = IB2 TJ=25 o C Figure 3. Turn-On Time IC Figure 4. Turn-Off Time /I B = f=1mhz R[m/ o C], THERMAL COEFFICIENTS R θ B for BE R θc for CE (sat) -55 o C to 125 o C -55 o C to 125 o C -55 o C to 25 o C Cib[pF], Cob[pF], CAPACITANCE Cib Cob Figure 5. Temperature Coefficients CB[], COLLECTOR-BASE OLTAGE Figure 6. Capacitance 2N6520 Rev. B1 3

4 Typical Performance Characteristics f T [MHz], CURRENT GAIN-BANDWIDTH PRODUCT CE = -20 Figure 7. Current Gain Bandwidth Product (Continued) 2N6520 Rev. B1 4

5 Physical Dimensions 3.86MAX 0.46 ± TYP [1.27 ±0.20] 1.02 ± ± TYP [1.27 ±0.20] (R2.29) TO-92 (0.25) ± ± Dimensions in Millimeters 2N6520 Rev. B1 5

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