BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor
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- Pauline Doyle
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1 December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.these products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Absolute Maximum Ratings = 25 C unless otherwise noted Symbol Parameter Value Units S Drain-Source Voltage 50 V S Gate-Source Voltage ±20 V Drain Current - Continuous (Note1) - Pulsed D G SOT-323 Marking : 138 S Features R DS(ON) = = 10V, = 0.22A R DS(ON) = = 4.5V, = 0.22A High density cell design for extremely low R DS(ON) Rugged and Reliable Compact industry standard SOT-323 surface mount package T J, T STG Operating and Storage Junction Temperature Range -55 to +150 C T L Maximum Lead Temperature for Soldering 300 C Purposes, 1/16 from Case for 10 Seconds A A Thermal Characteristics Symbol Parameter Value Units P D Maximum Power Dissipation (Note1) Derate Above 25 C Package Marking and Ordering Information mw mw/ C R θja Thermal Resistance, Junction to Ambient (Note1) 367 C/W Device Marking Device Reel Size Tape width Quantity 138 BSS138W 7 8mm 3000 units BSS138W Rev. A0 1
2 Electrical Characteristics = 25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BS Drain-Source Breakdown Voltage = 0V, = 250μA 50 V ΔBS ΔT J Breakdown Voltage Temperature Coefficient = 250μA, Referenced to 25 C 71 mv/ C SS Zero Gate Voltage Drain Current = 50V, = 0V = 50V, = 0V, T J = 125 C = 30V, = 0V μa μa na I GSS Gate-Body Leakage = ±20V, = 0V ±100 na On Characteristics (Note2) (th) Gate Threshold Voltage =, = 1mA V Δ(th) ΔT J R DS(ON) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Notes: C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width 300μs, Duty Cycle % = 1mA, Referenced to 25 C -3.9 mv/ C = 10V, = 0.22A = 4.5V, = 0.22A = 10V, = 0.22A, T J =125 C (ON) On-State Drain Current = 10V, = 5V 0.2 A g FS Forward Transconductance = 10V, = 0.22A 0.12 S Dynamic Characteristics C iss Input Capacitance 38 pf C oss Output Capacitance = 25V, = 0V, f = MHz 5.9 pf C rss Reverse Transfer Capacitance 3.5 pf R G Gate Resistance = 15mV, f = MHz 11 Ω Switching Characteristics (Note2) t d(on) Turn-On Delay Time ns t r Turn-On Rise Time V DD = 30V, = 0.29A, ns t d(off) Turn-Off Delay Time = 10V, R GEN = 6Ω ns t f Turn-Off Fall Time ns Q g Total Gate Change 1.1 nc = 25V, = 0.22A, Q gs Gate-Source Change 0.12 nc = 10V Q gd Gate-Drain Change 0.22 nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current 0.22 A V SD Drain-Source Diode Forward Voltage = 0V, I S = 0.44A (Note2) 1.4 V Ω Ω Ω BSS138W Rev. A0 2
3 Typical Performance Characteristics. Drain-Source Current (A) R DS (on) (Ω) Normalized Drain-Source On-Resistance Figure 1. On-Region Characteristics. 3.5V 4.5V 2V Drain-Source Voltage (V) 2.5 Figure 3. On-Resistance Variation with Temperature. = 10V = 220 ma 2.5V Figure 5. Drain-Source On Voltage with Temperature. 6V = 10V T J. Junction Temperature ( o C) 3V R (Ω) DS (on), Drain-Source On-Resistance R DS (on) (Ω) Drain-Source On-Resistance Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. = 2.5V 3V 3.5V Drain-Source Current(A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. = 25 o C Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4V = 125 o C 6V 4.5V 10V = 110 ma Gate to Source Voltage(V). Drain-Source On Voltage (V) = 10V = 125( o C) = 25( o C) = -55( o C) I S. Reverse Drain Current [ma] = 0 V =25 o C =150 o C =-55 o C Drain Current (A) V SD. Body Diode Forward Voltage [V] BSS138W Rev. A0 3
4 Typical Performance Characteristics (Continued). Gate-Source Voltage (V), Drain Current [A] Figure 7. Gate Charge Characteristics. = 220mA = 8V = 30V = 25V Qg. Gate Charge (nc) Figure 9. Maximum Safe Operating Area R DS(on) Limit =10V Single Pulse Rthja=367 o C/W T a = 25 o C 100μs 1ms 10ms 100ms 1s DC , Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve. C ISS, C OSS, C RSS. Capacitance (pf) P(pk), Peak Transient Power (W) Figure 8. Capacitance Characteristics. C ISS C OSS C RSS f = 1MHZ = 0V Voltage Bias (V) Figure 10. Single Pulse Maximum Power Dissipation. 0 1E t1, Time(sec) Single Pulse Rthja=367 o C/W =25 r(t), Normalized Transient Thermal Resistance % 30% 10% 5% 2% D=1% Single Pulse E-4 1E t1, time(sec) Rthja(t)=r(t)*Rthja Rthja=367 o C/W BSS138W Rev. A0 4
5 Physical Dimensions 0± ± ±0.10 0±0.10 SOT ± ± ± ± Min Dimensions in Millimeters BSS138W Rev. A0 5
6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficientMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM OptoHiT OPTOLOGIC OPTOPLANAR PDP SPM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * The Power Franchise TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOSSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I50 Fairchild Semiconductor Corporation
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