FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET
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1 FDYCZ Complementary N & P-Channel PowerTrench MOSFET Features : N-Channel Max r DS(on).7 at V GS =.V, I D = ma Max r DS(on). at V GS =.V, I D = ma Max r DS(on). at V GS =.V, I D = ma : P-Channel Max r DS(on). at V GS = -.V, I D = -ma Max r DS(on). at V GS = -.V, I D = -ma Max r DS(on).7 at V GS = -.V, I D = -ma ESD protection diode (note ) RoHS Compliant General Description This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to optimize the r V GS =.V and specify the r V GS =.V. Applicatio Level shifting MOSFET Maximum Ratings T C = C unless otherwise noted Thermal Characteristics Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers Symbol Parameter Units V DS Drain to Source Voltage - V V GS Gate to Source Voltage ± ± V Drain Current -Continuous (Note a) - I D -Pulsed - ma Power Dissipation (Steady State) (Note a) P D (Note b) mw T J, T STG Operating and Storage Jaunting Temperature Range - to C S G D November 9 D G S FDYCZ Complementary N & P-Channel PowerTrench MOSFET R JA Thermal Resistance, Junction to Ambient (Note a) R JA Thermal Resistance, Junction to Ambient (Note b) Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity E FDYCZ SC9-7 mm units 9 Fairchild Semiconductor Corporation FDYCZ Rev. B
2 Electrical Characteristics T J = C unless otherwise noted Symbol Parameter Test Conditio Type Min Typ Max Units Off Characteristics B VDSS B VDSS T J I DSS I GSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current On Characteristics (note ) V GS(th) V GS(th) T J r DS(on) g FS Gate-Body Leakage Dynamic Characteristics Switching Characteristics I D = A, V GS = V I D = - A, V GS = V I D = A, referenced to C I D = - A, referenced to C V DS = V, V DS =V V DS = -V, V DS =V V GS = ±V, V DS = V V GS = ±.V, V DS = V V GS = ±V, V DS = V Gate to Source Threshold Voltage V GS = V DS, I D = A V GS = V DS, I D = - A Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Traconductance I D = A, referenced to C I D = - A, referenced to C V GS =.V, I D = ma V GS =.V, I D = ma V GS =.V, I D = ma, V GS =.V, I D = ma,t J = C V GS = -.V, I D = --ma V GS = -.V, I D = -ma V GS = -.V, I D = -ma V GS = -.V, I D = -ma, T J = C V DS = V, I D = ma V DS = -V, I D = -ma C iss Input Capacitance V DS = V, V GS = V, f = MHz C oss C rss Output Capacitance Reverse Trafer Capacitance V DS = -V, V GS = V, f = MHz t d(on) t r t d(off) Turn-On Delay Time Rise Time Turn-Off Delay Time V DD = V, I D = A, V GS =.V, R g = V DD = -V, I D = -.A, V GS = -.V, R g = t f Fall Time Q g Q gs Total Gate Charge Gate to Source Gate Charge V DS = V, I D = ma, V GS =.V Q gd Gate to Drain Miller Charge V DS = -V, I D = -ma, V GS = -.V V - ± ± ± mv/ C A A V mv/ C S pf pf pf nc nc nc FDYCZ Complementary N & P-Channel PowerTrench MOSFET 9 Fairchild Semiconductor Corporation FDYCZ Rev. B
3 Electrical Characteristics T J = C unless otherwise noted Drain-Source Diode Characteristics V SD t rr Q rr Symbol Parameter Test Conditio Type Min Typ Max Units Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge V GS = V, I S = ma (Note ) V GS = V, I S = -ma (Note ) I F = ma, di/dt = A/ s I F = -ma, di/dt = A/ s Notes: : R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pi. R JC is guaranteed by design while R JA is determined by the user's board design. Scale : on letter size paper a) C/W when mounted on a in pad of oz copper : Pulse Test : Pulse Width < us, Duty Cycle <.% : The diode connected between the gate and source serves only as protection agait ESD. No gate overvoltage rating is implied b) C/W when mounted on a minimum pad of oz copper V nc FDYCZ Complementary N & P-Channel PowerTrench MOSFET 9 Fairchild Semiconductor Corporation FDYCZ Rev. B
4 Typical Characteristics (N-Channel) ID, DRAIN CURRENT (A) Figure. On-Region Characteristics Figure. Normalized on-resistance vs. Drain Current and Gate Voltage Figure. Normalized on-resistance vs. Temperature V DS = V T A = - o C o C o C... V GS, GATE TO SOURCE VOLTAGE (V) Figure. Trafer Characteristics R DS(ON), ON-RESISTANCE (OHM) IS, REVERSE DRAIN CURRENT (A) T A = o C T A = o C Figure. On-Resistance vs. Gate-to-Source Voltage.... V GS = V V GS, GATE TO SOURCE VOLTAGE (V) T A = o C o C - o C I D = ma V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Source to Drain Diode Forward Voltage vs. Source Current and Temperature FDYCZ Complementary N & P-Channel PowerTrench MOSFET 9 Fairchild Semiconductor Corporation FDYCZ Rev. B
5 Typical Characteristics (N-Channel) ID, DRAIN CURRENT (A).... Figure 7. Gate Charge Characteristics. V GS =.V ms s R JA = o C/W s T A = o C DC.. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE R DS(ON) LIMIT Figure 9. Maximum Safe Operating Area. D= V DS, DRAIN-SOURCE VOLTAGE (V) ms ms P(pk), PEAK TRANSIENT POWER (W) 9 7 Figure. Capacitance vs. Drain to source voltage.... t, TIME (sec) R JA = C/W T A = C Figure. Single Pulse Maximum Power Dissipation..... t, TIME (sec) R JA (t) = r(t) * R JA R JA = C/W P(pk) t t T J - T A = P * R JA (t) Duty Cycle, D = t / t FDYCZ Complementary N & P-Channel PowerTrench MOSFET Figure. Traient Thermal Respoe Curve Thermal characterization performed using the conditio described in Note b. Traient thermal respoe will change depending on the circuit board design. 9 Fairchild Semiconductor Corporation FDYCZ Rev. B
6 Typical Characteristics (P-Channel) -ID, DRAIN CURRENT (A).... RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) V GS = -.V -.V.. -V DS, DRAIN TO SOURCE VOLTAGE (V).... Figure. -.V -.V -.V -.V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE On-Region Characteristics Figure T J, JUNCTION TEMPERATURE ( o C) Figure..... I D = -.A V GS = -.V V DS = -V Normalized on-resistance vs. Temperature T A = o C - o C o C... -V GS, GATE TO SOURCE VOLTAGE (V) -IS, REVERSE DRAIN CURRENT (A) RDS(ON), ON-RESISTANCE (OHM) V GS =-.V -.V -.V -.V -.V -.V -.V.... -I D, DRAIN CURRENT (A) Normalized on-resistance vs. Drain Current and Gate Voltage T A = o C T A = o C -V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance vs. Gate-to-Source Voltage V GS = V T A = o C o C - o C I D = -.7A V SD, BODY DIODE FORWARD VOLTAGE (V) FDYCZ Complementary N & P-Channel PowerTrench MOSFET Figure. Trafer Characteristics Figure 7. Source to Drain Diode Forward Voltage vs. Source Current and Temperature 9 Fairchild Semiconductor Corporation FDYCZ Rev. B
7 Typical Characteristics (P-Channel) -VGS, GATE-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) I D = -.A... Q g, GATE CHARGE (nc) Figure. V DS = -V -V -V Gate Charge Characteristics Figure V DS, DRAIN-SOURCE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE. R DS(ON) LIMIT V GS = -.V R JA = o C/W T A = o C ms ms ms s s DC s CAPACITANCE (pf) 7 C rss C oss -V DS, DRAIN TO SOURCE VOLTAGE (V) C iss f = MHz V GS = V Capacitance vs. Drain to source voltage.... t, TIME (sec) Figure. Maximum Safe Operating Area Figure. Single Pulse Maximum Power Dissipation. D = P(pk), PEAK TRANSIENT POWER (W) R JA = /W T A =..... t, TIME (sec) P(pk) R JA (t) = r(t) * R JA R JA = /W t t T J - T A = P * R JA (t) Duty Cycle, D = t / t FDYCZ Complementary N & P-Channel PowerTrench MOSFET Figure. Traient Thermal Respoe Curve Thermal characterization performed using the conditio described in Note b. Traient thermal respoe will change depending on the circuit board design. 9 Fairchild Semiconductor Corporation FDYCZ Rev. B 7
8 Dimeional Outline and Pad Layout. BSC. BSC (.) C.7. TOP VIEW A.... B.... BSC. C B A SEE DETAIL A..... LAND PATTERN RECOMMENDATION DETAIL A SCALE :..... FDYCZ Complementary N & P-Channel PowerTrench MOSFET BOTTOM VIEW NOTES: A) THIS PACKAGE CONFORMS TO EIAJ SC9 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DRAWING CONFORMS TO ASME Y.M-99 D) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. MADArevA 9 Fairchild Semiconductor Corporation FDYCZ Rev. B
9 tm tm tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Trafer Logic EcoSPARK EfficentMax EZSWITCH * * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * *Trademarks of System General Corporation, used under licee by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with itructio for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw /W /kw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT - SuperSOT - SuperSOT - SupreMOS SyncFET Sync-Lock * Datasheet Identification Product Status Definition Advance Information Formative / In Design The Power Franchise TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT *. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. UHC Ultra FRFET UniFET VCX VisualMax XS ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Datasheet contai the design specificatio for product development. Specificatio may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contai preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contai final specificatio. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete 9 Fairchild Semiconductor Corporation FDYCZ Rev. B Not In Production Datasheet contai specificatio on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. 9 Rev. I
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