FDPF16N50UT N-Channel UniFET TM Ultra FRFET TM MOSFET

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1 FDPF16N50UT N-Channel UniFET TM Ultra FRFET TM MOSFET 500 V, 15 A, 480 mω Features R DS(on) = 370 mω ( = 10 V, = 7.5 A Low Gate Charge (Typ. 32 nc) Low C rss (Typ. 20 pf) 100% Avalanche Tested Improved dv/dt Capability RoHS Compliant Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply G DS TO-220F Description November 2013 UniFET TM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFET TM MOSFET has much superior body diode reverse recovery performance. Its t rr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. G D S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted. Symbol Parameter FDPF16N50UT Unit S Drain to Source Voltage 500 V S Gate to Source Voltage ±30 V Drain Current Thermal Characteristics - Continuous (T C = 25 o C) 15* - Continuous (T C = 100 o C) 9* M Drain Current - Pulsed (Note 1) 60* A E AS Single Pulsed Avalanche Energy (Note 2) 610 mj I AR Avalanche Current (Note 1) 15 A E AR Repetitive Avalanche Energy (Note 1) 20 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns P D Power Dissipation (T C = 25 o C) 38.5 W - Derate above 25 o C 0.3 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +150 o C T L Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 o C *Drain current limited by maximum junction temperature Symbol Parameter FDPF16N50UT Unit R JC Thermal Resistance, Junction to Case, Max. 3.3 R JA Thermal Resistance, Junction to Ambient, Max A o C/W 1

2 Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDPF16N50UT FDPF16N50UT TO-220F Tube N/A N/A 50 units Electrical Characteristics T C = 25 C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BS Drain to Source Breakdown Voltage = 250 A, = 0V, T J = 25 o C V BS Breakdown Voltage Temperature / T J Coefficient = 250 A, Referenced to 25 o C V/ o C = 500V, = 0V SS Zero Gate Voltage Drain Current A = 400V, T C = 125 o C I GSS Gate to Body Leakage Current = ±30V, = 0V - - ±100 na On Characteristics (th) Gate Threshold Voltage =, = 250 A V R DS(on) Static Drain to Source On Resistance = 10V, = 7.5A g FS Forward Transconductance = 40V, = 7.5A S Dynamic Characteristics C iss Input Capacitance pf = 25V, = 0V C oss Output Capacitance pf f = 1MHz C rss Reverse Transfer Capacitance pf Q g(tot) Total Gate Charge at 10V nc Q gs Gate to Source Gate Charge = 400V, = 15A nc Q gd Gate to Drain Miller Charge = 10V nc Switching Characteristics t d(on) Turn-On Delay Time ns t r Turn-On Rise Time V DD = 250V, = 15A ns t d(off) Turn-Off Delay Time R G = ns t f Turn-Off Fall Time (Note 4) ns (Note 4) Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current A I SM Maximum Pulsed Drain to Source Diode Forward Current A V SD Drain to Source Diode Forward Voltage = 0V, I SD = 15A V t rr Reverse Recovery Time = 0V, I SD = 15A ns Q rr Reverse Recovery Charge di F /dt = 100A/ s C NOTES: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 5.5 mh, I AS = 15 A, V DD = 50 V, R G = 25 Ω, starting T J = 25 C. 3. I SD 16 A, di/dt 200 A/μs, V DD BS, starting T J = 25 C. 4. Essentially independent of operating temperature typical characteristics. 2

3 Typical Performance Characteristics R DS(ON) [ ], Drain-Source On-Resistance Figure 1. On-Region Characteristics V 10 2 GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 10 1 Bottom : 5.5 V , Drain-Source Voltage [V] s Pulse Test 2. T C = 25 o C Figure 2. Transfer Characteristics o C 1. = 40V s Pulse Test , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature = 10V = 20V * Note : T J = 25 o C R, Reverse Drain Current [A] o C 150 o C 25 o C 1. = 0V s Pulse Test V SD, Source-Drain voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics C iss C oss C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd, Drain-Source Voltage [V] * Note : 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics = 100V = 250V 8 = 400V * Note : = 15A Q G, Total Gate Charge [nc] 3

4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BS, (Normalized) Drain-Source Breakdown Voltage = 0 V 2. = 250 A T J, Junction Temperature [ o C] Figure 9. Maximum Drain Current vs. Case Temperature Figure 8. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on) DC 10 ms 100 ms , Drain-Source Voltage [V] 1 ms 100 s 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 10 s T C, Case Temperature [ o C] Figure 10. Transient Thermal Response Curve Z JC (t), Thermal Response [ o C/W] D= single pulse P DM t 1 t 2 1. Z JC (t) = 3.3 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z JC (t) t 1, Square Wave Pulse Duration [sec] 4

5 I G = const. V 10 R G Figure 11. Gate Charge Test Circuit & Waveform R L DUT 90% V DD 10% t d(on) t r t d(off) tf tt onon t off Figure 12. Resistive Switching Test Circuit & Waveforms Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms 5

6 ( Driver ) R G DUT + I SD _ L Driver Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period Gate Pulse Width D = Gate Pulse Period V DD 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms 6

7 Mechanical Dimensions Figure 15. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: 7

8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. tm PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. 8 Rev. I66

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