Applications. Symbol Parameter Q1 Q2 Units V DS Drain to Source Voltage V V GS Gate to Source Voltage (Note 4) ±20 ±12 V

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1 FDMC78S Dual N-Channel PowerTrench MOSFET : 3 V, A, 9. mω : 3 V, 6 A, 6.4 mω Features : N-Channel Max r DS(on) = 9. mω at V GS = V, I D = A Max r DS(on) =. mω at V GS = 4.5 V, I D = A : N-Channel Max r DS(on) = 6.4 mω at V GS = V, I D = 6 A Max r DS(on) = 7.5 mω at V GS = 4.5 V, I D = 3.5 A Termination is Lead-free and RoHS Compliant Pin G S S S D General Description July 3 This device includes two 3V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance. Applications Computing Communications General Purpose Point of Load Notebook System D G S S S Power 33 MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Units V DS Drain to Source Voltage 3 3 V V GS Gate to Source Voltage (Note 4) ± ± V I D -Continuous T A = 5 C a 6 b Drain Current -Continuous (Package limited) T C = 5 C 6 -Pulsed 6 8 E AS Single Pulse Avalanche Energy (Note 3) mj P D Power Dissipation for Single Operation T A = 5 C.9 a.9 b W Power Dissipation for Single Operation T A = 5 C.8 c.8 d T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics A R θja Thermal Resistance, Junction to Ambient 65 a 65 b C/W R θja Thermal Resistance, Junction to Ambient 55 c 55 d Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC78S FDMC78S Power 33 3 mm 3 units Fairchild Semiconductor Corporation

2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BV DSS ΔBV DSS ΔT J On Characteristics Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient I D = 5 μa, V GS = V I D = ma, V GS = V I D = 5 μa, referenced to 5 C I D = ma, referenced to 5 C I DSS Zero Gate Voltage Drain Current V DS = 4 V, V GS = V I GSS V GS(th) ΔV GS(th) ΔT J r DS(on) g FS Gate to Source Leakage Current, Forward Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance V GS = V, V DS = V V GS = V, V DS = V I D = 5 μa, V GS = V I D = ma, V GS = V I D = 5 μa, referenced to 5 C I D = ma, referenced to 5 C V GS = V, I D = A V GS = 4.5 V, I D = A V GS = V, I D = A, T J = 5 C V GS = V, I D = 6 A V GS = 4.5 V, I D = 3.5 A V GS = V, I D = 6 A, T J = 5 C V DS = 5 V, I D = A V DS = 5 V, I D = 6 A V mv/ C μa na V mv/ C mω S Dynamic Characteristics C iss Input Capacitance : V DS = 5 V, V GS = V, f = MHZ C oss C rss R g Output Capacitance Reverse Transfer Capacitance Gate Resistance : V DS = 5 V, V GS = V, f = MHZ pf pf pf Ω Switching Characteristics t d(on) t r t d(off) t f Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time : V DD = 5 V, I D = A, R GEN = 6 Ω : V DD = 5 V, I D = 6 A, R GEN = 6 Ω Q g Total Gate Charge V GS = V to V V DD = 5 V, Q g Total Gate Charge V GS = V to 5 V I D = A Q gs Q gd Gate to Source Gate Charge Gate to Drain Miller Charge V DD = 5 V, I D = 6 A ns ns ns ns nc nc nc nc Fairchild Semiconductor Corporation

3 Electrical Characteristics T J = 5 C unless otherwise noted Drain-Source Diode Characteristics V SD t rr Q rr Symbol Parameter Test Conditions Type Min Typ Max Units Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge V GS = V, I S = A (Note ) V GS = V, I S = A (Note ) V GS = V, I S = A (Note ) V GS = V, I S = 6 A (Note ) I F = A, di/dt = A/μs I F = 6 A, di/dt = 3 A/μs Notes:.R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design. SS SF DS DF G a. 65 C/W when mounted on a in pad of oz copper SS SF DS DF G b. 65 C/W when mounted on a in pad of oz copper V ns nc c. 55 C/W when mounted on a minimum pad of oz copper d. 55 C/W when mounted on a minimum pad of oz copper SS SF DS DF G SS SF DS DF G. Pulse Test: Pulse Width < 3 μs, Duty cycle <.%. 3. : E AS of mj is based on starting T J = 5 o C, L =.3 mh, I AS = A, V DD = 7 V, V GS = V. % tested at L = 3 mh, I AS = 5. A. : E AS of mj is based on starting T J = 5 o C, L =.3 mh, I AS = A, V DD = 7 V, V GS = V. % tested at L = 3 mh, I AS = 5.4 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied Fairchild Semiconductor Corporation 3

4 Typical Characteristics ( N-Channel) T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX Figure. V GS = V V GS = 4.5 V I D = A V GS = V V GS = 4 V V GS = 3.5 V V GS = 3 V V DS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE On Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) V GS = 3 V V GS = 3.5 V V GS = 4.5 V I D, DRAIN CURRENT (A) I D = A PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX T J = 5 o C T J = 5 o C V GS = 4 V V GS = V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V DS = 5 V T J = 5 o C T J = 5 o C T J = -55 o C IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 5 o C T J = 5 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current Fairchild Semiconductor Corporation 4

5 Typical Characteristics ( N-Channel) T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) IAS, AVALANCHE CURRENT (A) I D = A 5 5 Q g, GATE CHARGE (nc) 4 Figure 7. V DD = V V DD = 5 V V DD = V. 3 V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage T J = 5 o C T J = 5 o C T J = o C.. t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) ID, DRAIN CURRENT (A) f = MHz V GS = V THIS AREA IS LIMITED BY r DS(on) C iss C oss C rss ms ms SINGLE PULSE ms. T J = MAX RATED s R θja = 55 o C/W DERIVED FROM s T A = 5 o C TEST DATA DC... V DS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure. Forward Bias Safe Operating Area P (PK), PEAK TRANSIENT POWER (W) t, PULSE WIDTH (sec) Figure. Single Pulse Maximum Power Dissipation SINGLE PULSE R θja = 55 o C/W T A = 5 o C Fairchild Semiconductor Corporation 5

6 Typical Characteristics ( N-Channel) T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θja.. DUTY CYCLE-DESCENDING ORDER D = SINGLE PULSE R θja = 55 o C/W (Note b) t, RECTANGULAR PULSE DURATION (sec) Figure. Junction-to-Ambient Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C Fairchild Semiconductor Corporation 6

7 Typical Characteristics ( N-Channel) T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = 4.5 V V GS = 4 V V GS = 3.5 V V GS = V V GS = 3 V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 4. On- Region Characteristics I D = 6 A V GS = V T J, JUNCTION TEMPERATURE ( o C) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = 3 V V GS = 4 V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V GS = 4.5 V V GS = 3.5 V V GS = V I D, DRAIN CURRENT (A) Figure 5. Normalized on-resistance vs Drain Current and Gate Voltage rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX I D = 6 A T J = 5 o C T J = 5 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 6. Normalized On-Resistance vs Junction Temperature Figure 7. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V DS = 5 V T J = 5 o C T J = 5 o C T J = -55 o C 3 4 V GS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 5 o C T J = -55 o C T J = 5 o C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 8. Transfer Characteristics Figure 9. Source to Drain Diode Forward Voltage vs Source Current Fairchild Semiconductor Corporation 7

8 Typical Characteristics ( N-Channel) T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) IAS, AVALANCHE CURRENT (A) I D = 6 A V DD = V V DD = 5 V V DD = V Q g, GATE CHARGE (nc) 4 Figure. Gate Charge Characteristics T J = 5 o C T J = 5 o C T J = o C... t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) ID, DRAIN CURRENT (A) 3 f = MHz V GS = V. 3 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. Capacitance vs Drain to Source Voltage C iss C oss C rss ms THIS AREA IS LIMITED BY r DS(on) ms SINGLE PULSE ms. T J = MAX RATED s R θja = 55 o C/W DERIVED FROM s TEST DATA T A = 5 o C DC... V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Unclamped Inductive Switching Capability Figure 3. Forward Bias Safe Operating Area P (PK), PEAK TRANSIENT POWER (W) SINGLE PULSE R θja = 55 o C/W T A = 5 o C t, PULSE WIDTH (sec) Figure 4. Single Pulse Maximum Power Dissipation Fairchild Semiconductor Corporation 8

9 Typical Characteristics ( N-Channel) T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θja.. DUTY CYCLE-DESCENDING ORDER D = SINGLE PULSE R θja = 55 o C/W (Note b) t, RECTANGULAR PULSE DURATION (sec) Figure 6. Junction-to-Ambient Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C Fairchild Semiconductor Corporation 9

10 Typical Characteristics (continued) SyncFET TM Schottky body diode Characteristics Fairchild s SyncFET TM process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 7 shows the reverses recovery characteristic of the FDMC78S. CURRENT (A) TIME (ns) Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. I DSS, REVERSE LEAKAGE CURRENT (A) - T J = 5 o C T J = o C T J = 5 o C V DS, REVERSE VOLTAGE (V) Figure 7. FDMC78S SyncFET TM body diode reverse recovery characteristic Figure 8. SyncFET TM body diode reverses leakage versus drain-source voltage Fairchild Semiconductor Corporation

11 Dimensional Outline and Pad Layout Fairchild Semiconductor Corporation

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