FDD050N03B N-Channel PowerTrench MOSFET 30V, 90A, 5mΩ Features

Transcription

1 FDD050N03B N-Channel PowerTrench MOSFET 30V, 90A, 5mΩ Features R DS(on) = 3.7mΩ ( Typ.)@ V GS = 0V, I D = 25A Fast Switching Speed Low gate charge High Performance Trench Technology for Extremely Low R DS(on) High Power and Current Handling Capability RoHS Compliant G S D D-PAK FDD Series Description March 200 This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC Convertors / Synchronous Rectification G D S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted Symbol Parameter FDD050N03B Units V DSS Drain to Source Voltage 30 V V GSS Gate to Source Voltage ±6 V Thermal Characteristics - Continuous (T C = 25 o C, Silicon Limited) 90* I D Drain Current - Continuous (T C = 00 o C, Silicon Limited) 63* A - Continuous (T C = 25 o C, Package Limited) 50 I DM Drain Current - Pulsed (Note ) 360 A E AS Single Pulsed Avalanche Energy (Note 2) 72 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 2 V/ns P D Power Dissipation (T C = 25 o C) 65 W - Derate above 25 o C 0.43 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +75 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A. Symbol Parameter Ratings Units R θjc Thermal Resistance, Junction to Case 2.3 o C/W R θja Thermal Resistance, Junction to Ambient (Note 6) Fairchild Semiconductor Corporation

2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD050N03B FDD050N03B D-PAK 330mm 6mm 2500 Electrical Characteristics T C = 25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250μA, V GS = 0V, T C = 25 o C V ΔBV DSS Breakdown Voltage Temperature ΔT J Coefficient I D = 250μA, Referenced to 25 o C mv/ o C I DSS Zero Gate Voltage Drain Current V DS = 24V, V GS = 0V - - μa I GSS Gate to Body Leakage Current V GS = ±6V, V DS = 0V - - ±00 na On Characteristics V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250μA V V R GS = 0V, I D = 25A DS(on) Static Drain to Source On Resistance mω V GS = 4.5V, I D = 5A g FS Forward Transconductance V DS = 5V, I D = 50A (Note 4) S Dynamic Characteristics C iss Input Capacitance pf V DS = 5V, V GS = 0V C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf Q g(tot) Total Gate Charge at 0V V DD = 5V, I D = 50A nc Q gs Gate to Source Gate Charge V GS = 0V nc Q gs2 Gate Charge Threshold to Plateau nc Q gd Gate to Drain Miller Charge (Note 4,5) nc Switching Characteristics t d(on) Turn-On Delay Time V DD = 5V, I D = 50A ns t r Turn-On Rise Time V GS = 0V, R GEN = 4.7Ω ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4,5) ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current * A I SM Maximum Pulsed Drain to Source Diode Forward Current A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 50A V t rr Reverse Recovery Time V GS = 0V, I SD = 50A ns Q rr Reverse Recovery Charge di F /dt = 00A/μs (Note 4) nc Notes:. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = mh, I AS = 2A, V DD = 27V, R G = 25Ω, Starting T J = 25 C 3. I SD 50A, di/dt 200A/μs, V DD BV DSS, Starting T J = 25 C 4. Pulse Test: Pulse width 300μs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 6. When mounted on a in 2 pad of 2 oz copper 2

3 Typical Performance Characteristics ID, Drain Current[A] Figure. On-Region Characteristics 000 RDS(ON) [mω], Drain-Source On-Resistance 00 0 V GS = 5.0 V 0.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V 3.0 V. 250μs Pulse Test 2. T C = 25 o C V DS, Drain-Source Voltage[V] Figure 2. Transfer Characteristics V GS, Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature V GS = 4.5V T C = 25 o C V GS = 0V I D, Drain Current [A] IS, Reverse Drain Current [A] ID, Drain Current[A] V DS = 20V μs Pulse Test 75 o C 75 o C 25 o C -55 o C 25 o C. V GS = 0V μs Pulse Test V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C iss C oss C rss. V GS = 0V 2. f = MHz V DS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics V DS = 6V V DS = 5V V DS = 24V I D = 50A Q g, Total Gate Charge [nc] 3

4 Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage ID, Drain Current [A] Figure 7. Breakdown Voltage Variation vs. Temperature V GS = 0V 2. I D = 0mA T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on). T C = 25 o C ms 0ms 00μs 00ms DC 2. T J = 75 o C Single Pulse V DS, Drain-Source Voltage [V] RDS(on), [Normalized] Drain-Source On-Resistance ID, Drain Current [A] Figure 8. On-Resistance Variation vs. Temperature V GS = 0V 2. I D = 25A T J, Junction Temperature [ o C] Figure 0. Maximum Drain Current vs. Case Temperature Limited by Package R θjc = 2.3 o C/W T C, Case Temperature [ o C] Figure. Transient Thermal Response Curve 4 Thermal Response [Z θjc ] Z θjc (t) = 2.9 o C/W Max. 2. Duty Factor, D= t /t Single pulse 2 3. T JM - T C = P DM * Z θjc (t) Rectangular Pulse Duration [sec] P DM t t 2 4

5 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5

6 Peak Diode Recovery dv/dt Test Circuit & Waveforms D U T + I S D V D S _ L D r iv e r R G S a m e T y p e a s D U T V G S d v / d t c o n t r o lle d b y R G I S D c o n t r o lle d b y p u ls e p e r io d V D D V G S ( D riv e r ) G a t e P u ls e W id t h D = G a t e P u ls e P e r io d 0 V I F M, B o d y D io d e F o r w a r d C u r r e n t I S D ( D U T ) d i/ d t I R M B o d y D io d e R e v e r s e C u r r e n t V D S ( D U T ) B o d y D io d e R e c o v e r y d v / d t V S D V D D B o d y D io d e F o r w a r d V o lt a g e D r o p 6

7 Mechanical Dimensions D-PAK Dimensions in Millimeters 7

8 tm tm tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. The Power Franchise AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM OptiHiT OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax XS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed Obsolete First Production Full Production Not In Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. 8 Rev. I47