FDB8860 N-Channel Logic Level PowerTrench MOSFET. 30V, 80A, 2.6mΩ. Features. Applications. December R DS(ON) = 1.9mΩ (Typ), V GS = 5V, I D = 80A

Transcription

1 FDB886 N-Channel Logic Level PowerTrench MOSFET 3V, 8A, 2.6mΩ Features R DS(ON) =.9mΩ (Typ), V GS = 5V, I D = 8A Q g(5) = 89nC (Typ), V GS = 5V Low Miller Charge Low Q RR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant Applications DC-DC Converters December 2 FDB886 Rev A2

2 MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage 3 V V GS Gate to Source Voltage ±2 V Drain Current Continuous (V GS = V, T C < 63 o C) 8 A I D Continuous (V GS = 5V, T C < 62 o C) 8 A Continuous (V GS = V, T C = 25 o C, with R θja = 43 o C/W) 3 A Pulsed Figure 4 A E AS Single Pulse Avalanche Energy (Note ) 947 mj Power Dissipation 254 W P D Derate above 25 o C.7 W/ o C T J, T STG Operating and Storage Temperature -55 to +75 o C Thermal Characteristics R θjc Thermal Resistance Junction to Case.59 o C/W R θja Thermal Resistance Junction to Ambient (Note 2) 62 o C/W R θja Thermal Resistance Junction to Ambient TO-263,in 2 copper pad area 43 o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB886 FDB886 TO-263AB 33mm 24mm 8units Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = ma, V GS = V V V I DSS Zero Gate Voltage Drain Current DS = 24V - - μa V GS = V T J = 5 C I GSS Gate to Source Leakage Current V GS = ±2V - - ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V DS = V GS, I D = 25μA.7 3 V R DS(ON) Drain to Source On Resistance Dynamic Characteristics I D = 8A, V GS = V I D = 8A, V GS = 5V I D = 8A, V GS = 4.5V I D = 8A, V GS = V, T J = 75 C C ISS Input Capacitance pf V DS = 5V, V GS = V, C OSS Output Capacitance pf f = MHz C RSS Reverse Transfer Capacitance pf R G Gate Resistance f = MHz Ω Q g(tot) Total Gate Charge at V V GS = V to V nc Q g(5) Total Gate Charge at 5V V GS = V to 5V nc V DD = 5V Q g(th) Threshold Gate Charge V GS = V to V nc I D = 8A Q gs Gate to Source Gate Charge nc I g =.ma Q gs2 Gate Charge Threshold to Plateau nc Q gd Gate to Drain Miller Charge nc mω 2

3 Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t (on) Turn-On Time ns t d(on) Turn-On Delay Time ns t r Turn-On Rise Time V DD = 5V, I D = 8A ns t d(off) Turn-Off Delay Time V GS = 5V, R GS = Ω ns t f Turn-Off Fall Time ns t off Turn-Off Time ns Drain-Source Diode Characteristics V SD Source to Drain Diode Voltage I SD = 8A V I SD = 4A - -. V t rr Reverse Recovery Time I SD = 8A, di SD /dt = A/μs ns Q rr Reverse Recovery Charge I SD = 8A, di SD /dt = A/μs nc Notes: : Starting T J = 25 o C, L =.47mH, I AS = 64A, V DD = 3V, V GS = V. 2: Pulse width = s 3

4 Typical Characteristics T J = 25 C unless otherwise noted POWER DISSIPATION MULIPLIER T C, CASE TEMPERATURE( o C) Figure. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE ZθJA 2. DUTY CYCLE-DESCENDING ORDER D = SINGLE PULSE ID, DRAIN CURRENT (A) V GS = 5V V GS = V CURRENT LIMITED BY PACKAGE T C, CASE TEMPERATURE ( o C) Figure 2. Maximum Continuous Drain Current vs Case Temperature P DM t t 2 NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θjc x R θjc + T C t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance I (PK), PEAK CURRENT (A) 3 SINGLE PULSE T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 75 - T C t, PULSE WIDTH (s) Figure 4. Peak Current Capability 4

5 Typical Characteristics T J = 25 C unless otherwise noted ID, DRAIN CURRENT(A) us us ms ms ms DC Figure 5. Forward Bias Safe Operating Area ID, DRAIN CURRENT (A) OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) SINGLE PULSE T J = MAX RATED T C = 25 o C. V DS, DRAIN TO SOURCE VOLTAGE(V) CURRENT LIMITED BY PACKAGE PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V DD = 5V T J = 75 o C T J = 25 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) 6 IAS, AVALANCHE CURRENT (A) 5 If R = t AV = (L)(I AS )/(.3*RATED BV DSS - V DD ) If R t AV = (L/R)ln[(I AS *R)/(.3*RATED BV DSS - V DD ) +] STARTING T J = 5 o C STARTING T J = 25 o C. t AV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN754 and AN755 Figure 6. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) V GS = 4V V GS = 5V V GS = V V GS = 3V 2 PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (mω) I D = 4A PULSE DURATION = 8μs DUTY CYCLE=.5% MAX T J = 75 o C T J = 25 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 8μs DUTY CYCLE =.5% MAX ID = 8A VGS = V T J, JUNCTION TEMPERATURE( O C) Figure. Normalized Drain to Source On Resistance vs Junction Temperature 5

6 Typical Characteristics T J = 25 C unless otherwise noted NORMALIZED GATE THRESHOLD VOLTAGE Figure. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pf) T J, JUNCTION TEMPERATURE( oc) 2 f = MHz V GS = V C iss C oss C rss V GS = V DS I D = 25μA 5. V DS, DRAIN TO SOURCE VOLTAGE (V) 3 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE I D = ma T J, JUNCTION TEMPERATURE( o C) Figure 2. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) V DD = 5V Q g, GATE CHARGE (nc) I D = 8A I D = A Figure 3. Capacitance vs Drain to Source Voltage Figure 4. Gate Charge vs Gate to Source Voltage 6

7 tm tm tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM OptiHiT OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * Datasheet Identification Product Status Definition Advance Information Formative / In Design The Power Franchise The Right Technology for Your Success TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * μserdes 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. UHC Ultra FRFET UniFET VCX VisualMax XS ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I5 7