FDD8444 N-Channel PowerTrench MOSFET
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1 M E N FDD8444 N-Channel PowerTrench MOSFET 40V, 50A, 5.2mΩ Features Applications Typ r DS(on) = 4mΩ at V GS = V, I D = 50A Automotive Engine Control Typ Q g() = 89nC at V GS = V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Q rr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architecture and VRMs Qualified to AEC Q1 Primary Switch for 12V Systems RoHS Compliant March 2015 L E A D F R E E I MP L E TA TIO N 2006 Fairchild Semiconductor Corporation 1
2 MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage 40 V V GS Gate to Source Voltage ±20 V I D Continuous (V GS = V, with R θja = 52 o C/W) 20 Drain Current Continuous (V GS = V) (Note 1) 145 Pulsed Figure 4 E AS Single Pulse Avalanche Energy (Note 2) 535 mj P D Power Dissipation 153 W Derate above 25 o C 1.02 W/ o C T J, T STG Operating and Storage Temperature -55 to +175 o C Thermal Characteristics R θjc Thermal Resistance, Junction to Case 0.98 o C/W R θja Thermal Resistance, Junction to Ambient TO-252, 1in 2 copper pad area 52 o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8444 FDD8444 TO-252AA 13 16mm 2500 units A Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 250μA, V GS = 0V V I DSS Zero Gate Voltage Drain Current On Characteristics Dynamic Characteristics V DS = 32V V GS = 0V T J = 150 o C I GSS Gate to Source Leakage Current V GS = ±20V - - ± na V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 250μA V r DS(on) Drain to Source On Resistance I D = 50A, V GS = V I D = 50A, V GS = V, T J = 175 o C C iss Input Capacitance pf V DS = 25V, V GS = 0V, C oss Output Capacitance pf f = 1MHz C rss Reverse Transfer Capacitance pf R G Gate Resistance f = 1MHz Ω Q g(tot) Total Gate Charge at V V GS = 0 to V Q g(5) Total Gate Charge at 5V V GS = 0 to 5V nc Q V DD = 20V g(th) Threshold Gate Charge V GS = 0 to 2V nc I D = 50A Q gs Gate to Source Gate Charge nc I g = 1.0mA Q gs2 Gate Charge Threshold to Plateau nc μa mω nc Q gd Gate to Drain Miller Charge nc 2
3 Electrical Characteristics T J = 25 o C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t on Turn-On Time ns t d(on) Turn-On Delay Time ns V DD = 20V, I D = 50A t r Turn-On Rise Time ns V GS = V, R GS = 2Ω t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time ns t off Turn-Off Time ns Drain-Source Diode Characteristics I SD = 50A V SD Source to Drain Diode Voltage V I SD = 25A t rr Reverse Recovery Time ns I F = 50A, di F /dt = A/μs Q rr Reverse Recovery Charge nc Notes: 1: Package current limitation is 50A. 2: Starting T J = 25 o C, L = 0.67mH, I AS = 40A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q1 at: All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 3
4 Typical Characteristics POWER DISSIPATION MULIPLIER T C, CASE TEMPERATURE( o C) Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, Z θjc DUTY CYCLE - DESCENDING ORDER D = ID, DRAIN CURRENT (A) CURRENT LIMITED BY PACKAGE V GS = V T C, CASE TEMPERATURE( o C) Figure 2. Maximum Continuous Drain Current vs Case Temperature P DM t 1 t 2 NOTES: DUTY FACTOR: D = t 1 /t 2 PEAK T J = P DM x Z θjc x R θjc + T C SINGLE PULSE t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance IDM, PEAK CURRENT (A) V GS = V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I T C SINGLE PULSE t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 4
5 Typical Characteristics ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0 1 CURRENT LIMITED BY PACKAGE us us 1ms ms 0.1 T C = 25 o C DC 1 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area OPERATION IN THIS AREA MAY BE LIMITED BY rds(on) SINGLE PULSE T J = MAX RATED PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX V DD = 5V T J = 175 o C T J = 25 o C T J = -55 o C IAS, AVALANCHE CURRENT (A) 500 If R = 0 t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD ) If R 0 t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1] STARTING T J = 150 o C STARTING T J = 25 o C t AV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) V GS = V V GS = 5V PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX V GS = 4.5V V GS = 4V V GS, GATE TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Saturation Characteristics rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) I D = 50A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX T J = 175 o C T J = 25 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX I D = 50A V GS = V T J, JUNCTION TEMPERATURE( o C) Figure. Normalized Drain to Source On Resistance vs Junction Temperature 5
6 Typical Characteristics NORMALIZED GATE THRESHOLD VOLTAGE V GS = V DS I D = 250μA T J, JUNCTION TEMPERATURE( o C) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pf) 00 0 C rss C iss C oss f = 1MHz V GS = 0V V DS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE I D = 250μA T J, JUNCTION TEMPERATURE ( o C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) ID = 50A V DD = 20V V DD = 15V V DD = 25V Q g, GATE CHARGE(nC) Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage 6
7
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AccuPower AttitudeEngine Awinda AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficientMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid MTi MTx MVN mwsaver OptoHiT OPTOLOGIC OPTOPLANAR Power Supply WebDesigner PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS Xsens 仙童 * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. AUTHORIZED USE Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive or other transportation, (2) military/aerospace, (3) any safety critical application including life critical medical equipment where the failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer s use of this product is subject to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be subject to Fairchild s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website,, under Terms of Use Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications may change Advance Information Formative / In Design in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Preliminary First Production Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make No Identification Needed Full Production changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. Obsolete Not In Production The datasheet is for reference information only. Rev. I77 Fairchild Semiconductor Corporation
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