Application. Inverter. H-Bridge. S2 Dual DPAK 4L

Transcription

1 FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: V, A, 24mΩ P-Channel: -V, -A, 54mΩ Features : N-Channel Max r DS(on) = 24mΩ at V GS = V, I D = 9.A Max r DS(on) = mω at V GS = 4.5V, I D = 7.A : P-Channel Max r DS(on) = 54mΩ at V GS = -V, I D = -6.5A Max r DS(on) = 7mΩ at V GS = -4.5V, I D = -5.6A Fast switching speed RoHS Compliant D/D2 General Description February 4 These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench- process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application Inverter H-Bridge D D2 G2 S2 G S G S G2 S2 Dual DPAK 4L N-Channel P-Channel MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Units V DS Drain to Source Voltage - V V GS Gate to Source Voltage ± ± V I D Thermal Characteristics Drain Current - Continuous (Package Limited) - - Continuous (Silicon Limited) T C = 25 C Continuous T A = 25 C Pulsed 55 - Power Dissipation for Single Operation T C = 25 C (Note ) 35 P D T A = 25 C (Note a) 3. W T A = 25 C (Note b).3 E AS Single Pulse Avalanche Energy (Note 3) mj T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C A R θjc Thermal Resistance, Junction to Case, Single Operation for (Note ) 4. R θjc Thermal Resistance, Junction to Case, Single Operation for (Note ) 3.5 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8424H FDD8424H TO-252-4L 3 2mm 25 units 3 Fairchild Semiconductor Corporation

2 Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BV DSS ΔBV DSS ΔT J I DSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current I D = 25μA, V GS = V I D = -25μA, V GS = V I D = 25μA, referenced to 25 C I D = -25μA, referenced to 25 C V DS = 32V, V GS = V V DS = -32V, V GS = V I GSS Gate to Source Leakage Current V GS = ±V, V DS = V On Characteristics V GS(th) ΔV GS(th) ΔT J r DS(on) g FS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance Dynamic Characteristics V GS = V DS, I D = 25μA V GS = V DS, I D = -25μA I D = 25μA, referenced to 25 C I D = -25μA, referenced to 25 C V GS = V, I D = 9.A V GS = 4.5V, I D = 7.A V GS = V, I D = 9.A, T J = 25 C V GS = -V, I D = -6.5A V GS = -4.5V, I D = -5.6A V GS = -V, I D = -6.5A, T J = 25 C V DS = 5V, I D = 9.A V DS = -5V, I D = -6.5A C iss Input Capacitance V DS = V, V GS = V, f = MHZ C oss C rss Output Capacitance Reverse Transfer Capacitance R g Gate Resistance f = MHz V DS = -V, V GS = V, f = MHZ ± ± V mv/ C μa na na V mv/ C mω S pf pf pf Ω Switching Characteristics t d(on) Turn-On Delay Time V DD = V, I D = 9.A, t r Rise Time V GS = V, R GEN = 6Ω t d(off) t f Turn-Off Delay Time Fall Time V DD = -V, I D = -6.5A, V GS = -V, R GEN = 6Ω Q g(tot) Q gs Total Gate Charge Gate to Source Charge V GS = V, V DD = V, I D = 9.A Q gd Gate to Drain Miller Charge V GS = -V, V DD = -V, I D = -6.5A ns ns ns ns nc nc nc 3 Fairchild Semiconductor Corporation 2

3 Electrical Characteristics T J = 25 C unless otherwise noted Drain-Source Diode Characteristics I S Notes: Symbol Parameter Test Conditions Type Min Typ Max Units. R θja is determined with the device mounted on a in 2 pad 2 oz copper pad on a.5 x.5 in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design. Maximum Continuous Drain to Source Diode Forward Current I SM Maximum Pulsed Drain to Source Diode Forward Current (Note 2) V SD t rr Q rr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge V GS = V, I S = 9.A (Note 2) V GS = V, I S = -6.5A (Note 2) I F = 9.A, di/dt = A/s I F = -6.5A, di/dt = A/s a. C/W when mounted on a in 2 pad of 2 oz copper Scale : on letter size paper b. 96 C/W when mounted on a minimum pad of 2 oz copper A A V ns nc a. C/W when mounted on a in 2 pad of 2 oz copper b. 96 C/W when mounted on a minimum pad of 2 oz copper Scale : on letter size paper 2. Pulse Test: Pulse Width < μs, Duty cycle < 2.%. 3. Starting T J = 25 C, N-ch: L =.3mH, I AS = 4A, V DD = V, V GS = V; P-ch: L =.3mH, I AS = -5A, V DD = -V, V GS = -V. 3 Fairchild Semiconductor Corporation 3

4 Typical Characteristics ( N-Channel)T J = 25 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 5 V GS = V V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. I D = 9A V GS = V V GS = 4.V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = 4.5V V GS = 3.5V V GS = 3.V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE I D, DRAIN CURRENT(A) On- Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) V GS = 3.V V GS = 3.5V I D = 9A PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = 4.5V V GS = 4.V V GS = V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On -Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) 6 5 PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V DS = 5V T J = 5 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics IS, REVERSE DRAIN CURRENT (A) 6.. V GS = V T J = 5 o C T J = -55 o C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 Fairchild Semiconductor Corporation 4

5 Typical Characteristics ( N-Channel)T J = 25 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) I D = 9A Q g, GATE CHARGE(nC) Figure 7. V DD = 5V V DD = 25V V DD = V. V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage... t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) I D, DRAIN CURRENT (A) 25 5 f = MHz V GS = V Limited by Package C iss C oss C rss V GS = V V GS = 4.5V 5 R θjc = 4. o C/W T C, CASE TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Case Temperature ID, DRAIN CURRENT (A) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE T J = MAX RATED R θjc = 4. o C/W T C = 25 o C. V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area us us ms ms DC 8 ), PEAK TRANSIENT POWER (W) P(PK V GS = V FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: 5 T C I = I T C = 25 o C SINGLE PULSE R θjc = 4. o C/W t, PULSE WIDTH (s) Figure 2. Single Pulse Maximum Power Dissipation 3 Fairchild Semiconductor Corporation 5

6 Typical Characteristics ( N-Channel)T J = 25 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc 2. DUTY CYCLE-DESCENDING ORDER D = t t 2 NOTES:. SINGLE PULSE DUTY FACTOR: D = t /t 2 R θjc = 4. o C/W PEAK T J = P DM x Z θjc x R θjc + T C t, RECTANGULAR PULSE DURATION (s) Figure 3. Transient Thermal Response Curve P DM 3 Fairchild Semiconductor Corporation 6

7 Typical Characteristics ( P-Channel) -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = -V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = -4.5V V GS = -4V V GS = -3.5V V GS = -3V V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 4. On- Region Characteristics I D = -6.5A V GS = -V T J, JUNCTION TEMPERATURE ( o C) T J = 25 C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rds(on), DRAIN TO V GS = -3V V GS = -3.5V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = -4V V GS = -V V GS = -4.5V.5 -I D, DRAIN CURRENT(A) Figure 5. Normalized on-resistance vs Drain Current and Gate Voltage SOURCE ON-RESISTANCE (mω) 6 8 I D = -6.5A PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS, GATE TO SOURCE VOLTAGE (V) Figure 6. Normalized On-Resistance vs Junction Temperature Figure 7. On-Resistance vs Gate to Source Voltage -I D, DRAIN CURRENT (A) PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V DS = -5V T J = 5 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) -IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 5 o C T J = -55 o C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 8. Transfer Characteristics Figure 9. Source to Drain Diode Forward Voltage vs Source Current 3 Fairchild Semiconductor Corporation 7

8 Typical Characteristics ( P-Channel)T J = 25 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -IAS, AVALANCHE CURRENT(A) I D = -6.5A V DD = -5V V DD = -25V V DD = -V Q g, GATE CHARGE(nC) Figure. Gate Charge Characteristics... t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) -I D, DRAIN CURRENT (A) f = MHz V GS = V C iss C oss C rss. -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 2. Capacitance vs Drain to Source Voltage R θjc = 3.5 o C/W V GS = -V V GS = -4.5V T C, CASE TEMPERATURE ( o C) -ID, DRAIN CURRENT (A) Figure 22. Unclamped Inductive Switching Capability THIS AREA IS LIMITED BY r ds(on) SINGLE PULSE T J = MAX RATED R θjc = 3.5 o C/W DC T C = 25 o C. -V DS, DRAIN to SOURCE VOLTAGE (V) Figure 24. Forward Bias Safe Operating Area us us ms ms 8 ), PEAK TRANSIENT POWER (W) P(PK Figure 23. Maximum Continuous Drain Current vs Case Temperature V GS = -V SINGLE PULSE FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: 5 T C I = I R θjc = 3.5 o C/W t, PULSE WIDTH (s) Figure 25. Single Pulse Maximum Power Dissipation T C = 25 o C 3 Fairchild Semiconductor Corporation 8

9 Typical Characteristics ( P-Channel)T J = 25 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc 2. DUTY CYCLE-DESCENDING ORDER D = t t 2 NOTES: DUTY FACTOR: D = t /t 2. SINGLE PULSE PEAK T J = P DM x Z θjc x R θjc + T C R θjc = 3.5 o C/W t, RECTANGULAR PULSE DURATION (s) Figure 26. Transient Thermal Response Curve P DM 3 Fairchild Semiconductor Corporation 9

10 Dimensional Outline and Pad Layout 3 Fairchild Semiconductor Corporation

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