FDP150N10 N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features

Transcription

1 FDP50N N-Channel PowerTrench MOSFET 0V, 57A, 5mΩ Features R DS(on) = 2mΩ ( V GS = V, I D = 49A Fast switching speed Low gate charge High performance trench technology for extremely low R DS(on) High power and current handling capability RoHS compliant General Description July 2008 tm This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC convertors / Synchronous Rectification D G D S TO-220 FDP Series G S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage 0 V V GSS Gate to Source Voltage ±20 V I D Drain Current -Continuous (T C = 25 o C) 57 A -Continuous (T C = 0 o C) 40 A I DM Drain Current - Pulsed (Note ) 228 A E AS Single Pulsed Avalanche Energy (Note 2) 32 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 7.5 V/ns P D Power Dissipation (T C = 25 o C) W - Derate above 25 o C 0.88 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C Thermal Characteristics Symbol Parameter Ratings Units R θjc Thermal Resistance, Junction to Case.3 R θcs Thermal Resistance, Case to Sink Typ. 0.5 o C/W R θja Thermal Resistance, Junction to Ambient Fairchild Semiconductor Corporation

2 Package Marking and Ordering Information T C = 25 o C unless otherwise noted Device Marking Device Package Reel Size Tape Width Quantity FDP50N FDP50N TO Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250µA, V GS = 0V, T C = 25 o C V BV DSS T J On Characteristics Breakdown Voltage Temperature Coefficient Dynamic Characteristics Switching Characteristics I D = 250µA, Referenced to 25 o C V/ o C V DS = 0V, V GS = 0V - - I DSS Zero Gate Voltage Drain Current µa V DS = 0V, V GS = 0V, T C = 50 o C I GSS Gate to Body Leakage Current V GS = ±20V, V DS = 0V - - ±0 na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250µA V R DS(on) Static Drain to Source On Resistance V GS = V, I D = 49A mω g FS Forward Transconductance V DS = 20V, I D = 49A (Note 4) S C iss Input Capacitance pf V DS = 25V, V GS = 0V C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf t d(on) Turn-On Delay Time ns t r Turn-On Rise Time V DD = 50V, I D = 49A ns t d(off) Turn-Off Delay Time V GS = V, R GEN = 25Ω ns t f Turn-Off Fall Time (Note 4, 5) ns Q g(tot) Total Gate Charge at V V DS = 80V, I D = 49A nc Q gs Gate to Source Gate Charge V GS = V nc Q gd Gate to Drain Miller Charge (Note 4, 5) nc Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current A I SM Maximum Pulsed Drain to Source Diode Forward Current A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 49A V t rr Reverse Recovery Time V GS = 0V, I SD = 49A ns Q rr Reverse Recovery Charge di F /dt = 0A/µs (Note 4) nc Notes: : Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.mH, I AS = 49A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3: I SD 49A, di/dt 200A/µs, V DD BV DSS, Starting T J = 25 C 4: Pulse Test: Pulse width 300µs, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics 2

3 Typical Performance Characteristics ID,Drain Current[A] Figure. On-Region Characteristics V GS = 5.0 V.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V. 250µs Pulse Test 2. T C = 25 o C 0. V DS,Drain-Source Voltage[V] Figure 2. Transfer Characteristics V GS,Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature RDS(ON) [mω], Drain-Source On-Resistance V GS = V V GS = 20V *Note: T C = 25 o C I D, Drain Current [A] ID,Drain Current[A] 00 IS, Reverse Drain Current [A] V DS = 20V µs Pulse Test 50 o C 50 o C -55 o C 25 o C 25 o C. V GS = 0V µs Pulse Test V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics C iss C oss C rss *Note:. V GS = 0V 2. f = MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0 0. V DS, Drain-Source Voltage [V] 30 Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] V DS = 25V V DS = 50V V DS = 80V *Note: I D = 49A Q g, Total Gate Charge [nc] 3

4 Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature V GS = 0V 2. I D = 250uA T J, Junction Temperature [ o C] 200 Figure 9. Maximum Safe Operating Area ID, Drain Current [A] ms ms DC Operation in This Area is Limited by R DS(on) 0µs µs 0.. T C = 25 o C 2. T J = 50 o C 3. Single Pulse V DS, Drain-Source Voltage [V] 200 RDS(on), [Normalized] Drain-Source On-Resistance ID, Drain Current [A] Figure 8. On-Resistance Variation vs. Temperature V GS = V 2. I D = 49A T J, Junction Temperature [ o C] Figure. Maximum Drain Current vs. Case Temperature T C, Case Temperature [ o C] Figure. Transient Thermal Response Curve Thermal Response [Z θjc ] Single pulse. Z θjc (t) =.3 o C/W Max. 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) Rectangular Pulse Duration [sec] P DM t t 2 4

5 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5

6 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V GS I SD V DS _ L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = Gate Pulse Period V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 6

7 Mechanical Dimensions TO-220 Dimensions in Millimeters 7

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