Features. Q1: N-Channel 7.0A, 30V. R DS(on) Q2: P-Channel. -5A, -30V R DS(on) = 25 C unless otherwise noted. Symbol Parameter Q1 Q2 Units

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1 Dual N & P-Channel PowerTrench MOSFET April 2 tm General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features : N-Channel 7.A, 3V : P-Channel R DS(on) V GS = V R DS(on) V GS = 4.5V -5A, -3V R DS(on) V GS = -V Fast switching speed R DS(on) V GS = -4.5V High power and handling capability in a widely used surface mount package SO- D DD2 D2 DD D Pin SO- G2 G S S GS2 S S Absolute Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Units V DSS Drain-Source Voltage 3 3 V V GSS Gate-Source Voltage ±2 ±2 V I D Drain Current - Continuous (Note a) Pulsed 2-2 A P D Power Dissipation for Dual Operation 2 2 Power Dissipation for Single Operation (Note a).. (Note c).9.9 E AS Single Pulse Avalanche Energy (Note 3) 54 3 mj T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 7 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 4 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 3 2mm 25 units W 2 Fairchild Semiconductor Corporation Rev F3(W)

2 Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown V GS = V, I D = 25 µa 3 V Voltage V GS = V, I D = -25 µa -3 BVDSS T J Breakdown Voltage Temperature Coefficient I D = 25 µa, Referenced to 25 C I D = -25 µa, Referenced to 25 C mv/ C I DSS Zero Gate Voltage Drain V DS = 24 V, V GS = V µa Current V DS = -24 V, V GS = V - I GSSF Gate-Body Leakage, Forward V GS = 2 V, V DS = V All na I GSSR Gate-Body Leakage, Reverse V GS = -2 V, V DS = V All - na On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 25 µa V DS = V GS, I D = -25 µa VGS(th) Gate Threshold Voltage I D = 25 µa, Referenced to 25 C T J Temperature Coefficient I D = -25 µa, Referenced to 25 C R DS(on) Static Drain-Source On-Resistance V GS = V, I D = 7 A V GS = V, I D = 7 A, T J = 25 C V GS = 4.5 V, I D = A V GS = - V, I D = -5 A V GS = - V, I D = -5 A, T J = 25 C V GS = -4.5 V, I D = -4 A I D(on) On-State Drain Current V GS = V, V DS = 5 V V GS = - V, V DS = -5 V g FS Forward Transconductance V DS = 5 V, I D = 7 A V DS = -5 V, I D =-5 A Dynamic Characteristics C iss Input Capacitance V DS = 5 V, V GS = V, f =. MHz C oss Output Capacitance C rss Reverse Transfer Capacitance V DS = -5 V, V GS = V, f =. MHz R G Gate Resistance V GS = 5 mv, f =. MHz V mv/ C mω A S pf pf pf Ω Rev F3 (W)

3 Electrical Characteristics (continued) T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note 2) t d(on) Turn-On Delay Time V DD = 5 V, I D = A, t r Turn-On Rise Time V GS = V, R GEN = Ω t d(off) Turn-Off Delay Time V DD = -5 V, I D = - A, t f Turn-Off Fall Time V GS = -V, R GEN = Ω Q g Total Gate Charge V DS = 5 V, I D = 7 A, V GS = V Q gs Gate-Source Charge Q gd Gate-Drain Charge V DS = -5 V, I D = -5 A,V GS = - V Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current I SM Maximum Plused Drain-Source Diode Forward Current (Note 2) V SD Drain-Source Diode Forward V GS = V, I S =.3 A (Note 2) Voltage V GS = V, I S = -.3 A (Note 2) t rr Diode Reverse Recovery Time I F = 7 A, d if/d t = A/µs Q rr Diode Reverse Recovery Charge I F = -5 A, d if/d t = A/µs ns ns ns ns nc nc nc A A V ns nc Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 7 /W when mounted on a.5 in 2 pad of 2 oz copper b) 25 /W when mounted on a.2 in 2 pad of 2 oz copper c) 35 /W when mounted on a minimum pad. Scale : on letter size paper 2. Pulse Test: Pulse Width < 3µs, Duty Cycle < 2.% 3. Starting TJ = 25 C, L = 3mH, IAS = A, VDD = 3V, VGS = V (). Starting TJ = 25 C, L = 3mH, IAS = 3A, VDD = 3V, VGS = V (). Rev F3 (W)

4 Typical Characteristics: (N-Channel) 2 V GS =.V 4.V 3.5V 2.2 I D, DRAIN CURRENT (A) 2 4.V 4.5V 3.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE..4 V GS = 3.5V V 5..V.V V DS, DRAIN-SOURCE VOLTAGE (V) Figure. On-Region Characteristics I D, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 7A V GS =.V R DS(ON), ON-RESISTANCE (OHM) T A = 25 o C T A = 25 o C I D = 3.5A T J, JUNCTION TEMPERATURE ( o C) Figure 3. On-Resistance Variation with Temperature V GS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. I D, DRAIN CURRENT (A) V DS = 5V T A = 25 o C -55 o C 25 o C I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = 25 o C 25 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev F3 (W)

5 Typical Characteristics: (N-Channel) V GS, GATE-SOURCE VOLTAGE (V) 4 2 I D = 7A V DS = V 5V 2V Q g, GATE CHARGE (nc) CAPACITANCE (pf) 4 2 C rss C oss C iss f = MHz V GS = V V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics. I D, DRAIN CURRENT (A).. R DS(ON) LIMIT V GS = V SINGLE PULSE R θja = 35 o C/W T A = 25 o C DC ms ms ms s s µs. V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. I AS, AVALANCHE CURRENT (A) Tj=25.. t AV, TIME IN AVALANCHE (ms) Tj=25 Figure. Unclamped Inductive Switching Capability Figure P(pk), PEAK TRANSIENT POWER (W) t, TIME (sec) SINGLE PULSE R θja = 35 C/W TA = 25 C Figure. Single Pulse Maximum Power Dissipation. Rev F3 (W)

6 Typical Characteristics: (P-Channel) -I D, DRAIN CURRENT (A) 3 2 V GS = -V -.V -5.V -4.5V -4.V -3.5V -3.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS =-4.V -4.5V -5.V -.V -7.V -.V -V V DS, DRAIN TO SOURCE VOLTAGE (V) I D, DRAIN CURRENT (A) Figure 2. On-Region Characteristics. Figure 3. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = -5A V GS = -V R DS(ON), ON-RESISTANCE (OHM) T A = 25 o C T A = 25 o C I D = -2.5A T J, JUNCTION TEMPERATURE ( o C) 2 4 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Temperature. Figure 5. On-Resistance Variation with Gate-to-Source Voltage. 5 -I D, DRAIN CURRENT (A) V DS = -5V T A = -55 o C 25 o C 25 o C -I S, REVERSE DRAIN CURRENT (A)... V GS =V T A = 25 o C 25 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure. Transfer Characteristics V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev F3 (W)

7 Typical Characteristics: (P-Channel) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D = SINGLE PULSE..... t, TIME (sec) R θja(t) = r(t) * R θa R θja = 35 C/W P(pk) tt t 2 t2 TJ - TA = P * R θja(t) Duty Cycle, D = t / t2 Figure 23. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. Rev F3 (W)

8 tm tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP-SPM Power-SPM PowerTrench Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world mw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT - SuperSOT - SuperMOS The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire µserdes UHC Ultra FRFET UniFET VCX VisualMax * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative or In Design First Production Full Production Not In Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Rev F3 (W)