FGPF70N33BT 330V, 70A PDP IGBT

Transcription

1 FGPF7N33BT 33V, 7A PDP IGBT Features High current capability Low saturation voltage: V CE(sat) I C = 7A High input impedance Fast switching RoHS Compliant Applications PDP System General Description November 28 tm Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. G C E TO-22F Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Description Ratings Units V CES Collector to Emitter Voltage 33 V V GES Gate to Emitter Voltage ± 3 V I Cpulse() * Pulsed Collector 6 A I C pulse(2) * Pulsed Collector 22 A P D Maximum Power 48 W Maximum Power T C = o C 9 W T J, T stg Operating Junction Temperature and Storage Temperrature -55 to +5 o C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 o C Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction to Case o C/W R θja Thermal Resistance, Junction to Ambient -- 4 o C/W Notes: : Repetitive test, Pulse width=usec, Duty=. 2: Half Sine Wave, D<., pluse width < 5usec *I C _pulse limited by max Tj 28 Fairchild Semiconductor Corporation

2 Package Marking and Ordering Information Packaging Max Qty Device Marking Device Package Type Qty per Tube per Box FGPF7N33BT FGPF7N33BTTU TO-22F Tube 5ea -- Electrical Characteristics of the IGBT T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = V, I C = 25µA V B VCES / T J Temperature Coefficient of Breakdown Voltage V GE = V, I C = 25uA V/ o C I CES Collector Cut-Off Current V CE = V CES, V GE = V µa I GES G-E Leakage Current V GE = V GES, V CE = V ±4 na On Characteristics V GE(th) G-E Threshold Voltage I C = 25µA, V CE = V GE V I C = 2A, V GE = 5V V V CE(sat) Collector to Emitter Saturation Voltage I C = 4A, V GE = 5V, V I C = 7A, V GE = 5V, V I C = 7A, V GE = 5V, V Dynamic Characteristics C ies Input Capacitance pf C oes Output Capacitance V CE = 3V, V GE = V, f = MHz pf C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time V CC = 2V, I C = 2A, R G = 5Ω, V GE = 5V, ns t d(off) Turn-Off Delay Time Resistive Load, ns t f Fall Time ns t d(on) Turn-On Delay Time ns t r Rise Time V CC = 2V, I C = 2A, R G = 5Ω, V GE = 5V, ns t d(off) Turn-Off Delay Time Resistive Load, ns t f Fall Time ns Q g Total Gate Charge nc Q ge Gate to Emitter Charge V CE = 2V, I C = 2A, V GE = 5V nc Q gc Gate to Collector Charge nc 2

3 Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, IC [A] V 2V 2V V V Figure 2. Typical Output Characteristics Collector Current, IC [A] V 5V 2V V V Figure 3. Typical Saturation Voltage Characteristics Collector Current, IC [A] V GE = 5V Collector Current, Ic [A] Figure 4. Transfer Characteristics Vce = 2V Tc=25 o C Tc=25 o C Gate-Emitter Voltage, Vge [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] V GE = 5V 7A 4A I C = 2A Collector-EmitterCase Temperature, T C [ o C] Figure 6. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] A 7A 4 I C = 2A Gate-Emitter Voltage, V GE [V] 3

4 Typical Performance Characteristics Figure 7. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] A 4 7A I C = 2A Gate-Emitter Voltage, V GE [V] Figure 8. Capacitance Characteristics Capacitance [pf] C ies C oes C res V GE = V, f = MHz 3 Figure 9. Gate charge Characteristics Gate-Emitter Voltage, VGE [V] V CC = V 2V Gate Charge, Q g [nc] Figure. Turn-on Characteristics vs. Gate Resistance 2 Collector Current, Ic [A] Figure. SOA Characteristics 5 Single Nonrepetitive ms ms. Pulse Curves must be derated linearly with increase in temperature.. 4 DC µs µs Figure 2. Turn-off Characteristics vs. Gate Resistance t r t f Switching Time [ns] t d(on) V CC = 2V, V GE = 5V I C = 2A Gate Resistance, R G [Ω] Switching Time [ns] t d(off) V CC = 2V, V GE = 5V I C = 2A Gate Resistance, R G [Ω] 4

5 Typical Performance Characteristics Figure 3. Turn-on Characteristics vs. Collector Current Switching Time [ns] V GE = 5V, R G = 5Ω t r t d(on) Switching Time [ns] Figure 4. Turn-off Characteristics vs. Collector Current V GE = 5V, R G = 5Ω t f t d(off) Collector Current, I C [A] Collector Current, I C [A] Figure 5. Switching Loss vs. Gate Resistance Figure 6. Switching Loss vs. Collector Current 3 E off E off Switching Loss [mj] E on V CC = 2V, V GE = 5V I C = 2A Gate Resistance, R G [Ω] Switching Loss [mj] E on V GE = 5V, R G = 5Ω Collector Current, I C [A] Figure 7. Turn off Switching SOA Characteristics 4 Collector Current, IC [A] Safe Operating Area V GE = 5V, 6 5

6 Typical Performance Characteristics Thermal Response [Zthjc] Figure 8.Transient Thermal Impedance of IGBT single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C E-3 E-5 E-4 E-3.. Rectangular Pulse Duration [sec] P DM t t 2 6

7 Mechanical Dimensions 5.8 ± ±. TO-22F.6 ±.2 ø3.8 ± ±.2 (7.) (.7) 6.68 ±.2 (.x45 ) 5.87 ± ±.3 MAX.47.8 ±. (3 ).35 ±. # ± TYP [2.54 ±.2] 2.54TYP [2.54 ±.2] 9.4 ± ±.2 Dimensions in Millimeters 7

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