FGA180N33ATD 330 V PDP Trench IGBT
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- Mervyn Fields
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1 FGA8N33ATD 33 V PDP Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.68 I C = 8 A High Input Impedance RoHS Complaint Applications PDP TV General Description October 23 Using novel trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP TV applications where low conduction and switching losses are essential. C G G D S TO-3P E Absolute Maximum Ratings Symbol Description Ratings Unit V CES Collector to Emitter Voltage 33 V V GES Gate to Emitter Voltage ± 3 V I C Collector 8 A I CM () Pulsed Collector 45 A P D Maximum Power 39 W Maximum Power T C = o C 56 W T J Operating Junction Temperature -55 to +5 o C T stg Storage Temperature Range -55 to +5 o C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 o C Notes: : Repetitive test, pulse width = usec, Duty =. * I C_ pulse limited by max Tj Thermal Characteristics Symbol Parameter Typ. Max. Unit R θjc (IGBT) Thermal Resistance, Junction to Case -.32 o C/W R θjc (Diode) Thermal Resistance, Junction to Case -.82 o C/W R θja Thermal Resistance, Junction to Ambient - 4 o C/W 2 Fairchild Semiconductor Corporation
2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGA8N33ATD FGA8N33ATDTU TO-3P - - 3ea Electrical Characteristics of the IGBT T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = V, I C = 4μA V I CES Collector Cut-Off Current V CE = V CES, V GE = V μa I GES G-E Leakage Current V GE = V GES, V CE = V - - ±4 na On Characteristics V GE(th) G-E Threshold Voltage I C = 25uA, V CE = V GE V I C = 4A, V GE = 5V -..4 V V CE(sat) Collector to Emitter Saturation Voltage I C = 8A, V GE = 5V, V I C = 8A, V GE = 5V V Dynamic Characteristics C ies Input Capacitance pf C oes Output Capacitance V CE = 3V, V GE = V, f = MHz pf C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time V CC = 2V, I C = 4A, R G = 5Ω, V GE = 5V, ns t d(off) Turn-Off Delay Time Resistive Load, ns t f Fall Time ns t d(on) Turn-On Delay Time ns t r Rise Time V CC = 2V, I C = 4A, R G = 5Ω, V GE = 5V, ns t d(off) Turn-Off Delay Time Resistive Load, ns t f Fall Time ns Q g Total Gate Charge nc Q ge Gate to Emitter Charge V CE = 2V, I C = 4A, V GE = 5V nc Q gc Gate to Collector Charge nc 2 Fairchild Semiconductor Corporation 2
3 Electrical Characteristics of the Diode T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max Unit V FM Diode Forward Voltage I F = 2A t rr I rr Q rr Diode Reverse Recovery Time Diode Peak Reverse Recovery Cyrrent Diode Reverse Recovery Charge I F =2A, di F /dt = 2A/μs V ns A nc 2 Fairchild Semiconductor Corporation 3
4 Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, IC [A] V 2V 2V V Figure 3. Typical Saturation Voltage Characteristics Collector Current, IC [A] V GE = 5V 9V 8V 7V V GE = 6V Figure 2. Typical Output Characteristics Collector Current, IC [A] V 2V 2V Figure 4. Transfer Characteristics Collector Current, I C [A] V CE = 2V 9V V 8V 7V V GE = 6V Gate-Emitter Voltage,V GE [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] V GE = 5V 8A 9A 4A I C = 2A Case Temperature, T C [ o C] Figure 6. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] A I C = 2A 8A 9A Gate-Emitter Voltage, V GE [V] 2 Fairchild Semiconductor Corporation 4
5 Typical Performance Characteristics Figure 7. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] Figure 9. Gate charge Characteristics Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, V GE [V] A I C = 2A 8A 9A V CC = V 2V Gate Charge, Q g [nc] Figure 8. Capacitance Characteristics Capacitance [pf] C ies C oes C res Figure. SOA Characteristics Collector Current, Ic [A] I C MAX (Pulse) I C MAX (Continuous) *Notes:. ms ms DC Operation V GE = V, f = MHz μs μs 2. T J = 5 o C 3. Single Pulse. 3 Figure. Turn-on Characteristics vs. Gate Resistance Switching Time [ns] 5 t r t d(on) V CC = 2V, V GE = 5V I C = 4A Gate Resistance, R G [Ω] Figure 2. Turn-off Characteristics vs. Gate Resistance Switching Time [ns] 5 V CC = 2V, V GE = 5V I C = 4A t d(off) Gate Resistance, R G [Ω] t f 2 Fairchild Semiconductor Corporation 5
6 Typical Performance Characteristics Figure 3. Turn-on Characteristics vs. Collector Current Switching Time [ns] 2 V GE = 5V, R G = 5Ω Collector Current, I C [A] t r t d(on) Switching Time [ns] Figure 4. Turn-off Characteristics vs. Collector Current V GE = 5V, R G = 5Ω t d(off) Collector Current, I C [A] t f Figure 5. Turn off Switching SOA Characteristics 5 Figure 6. Forward Characteristics Collector Current, IC [A] Safe Operating Area V GE = 5V, 4 Forward Current, IF [A] T J = 25 o C TJ = 25oC Forward Voltage, V F [V] 2 Fairchild Semiconductor Corporation 6
7 Typical Performance Characteristics Figure 7. Reverse Recovery Current Reverse Recovery Currnet, Irr [A] 4 2A/μs 3 2 di F /dt = A/μs Forward Current, I F [A] Figure 9.Reverse Recovery Time 4 Figure 8. Stored Charge Stored Recovery Charge, Qrr [nc] A/μs di F /dt = A/μs Forward Current, I F [A] Reverse Recovery Time, trr [ns] 3 2 di F /dt = A/μs 2A/μs Forward Current, I F [A] Figure 2.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C E-3 E-5 E-4 E-3.. Rectangular Pulse Duration [sec] P DM t t 2 2 Fairchild Semiconductor Corporation 7
8 Mechanical Dimensions Figure 2. TO-3P 3L - 3LD, T3, PLASTIC, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: Dimensions in Millimeters 2 Fairchild Semiconductor Corporation 8
9 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 2 Fairchild Semiconductor Corporation 9
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