FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT
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1 FGA25N2ANTD 2 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: V CE(sat), typ = 2. = 25 A and Low Switching Loss: E off, typ =.96 = 25 A and Extremely Enhanced Avalanche Capability Applications Induction Heating, Microwave Oven Description November 23 Using Fairchild's proprietary trench design and advanced NPT technology, the 2V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven. G C FGA25N2ANTD 2 V, 25 A NPT Trench IGBT G C E TO-3P E Absolute Maximum Ratings Symbol Description Ratings Unit V CES Collector-Emitter Voltage 2 V S Gate-Emitter Voltage 2 V Collector 5 A Collector = C 25 A M () Pulsed Collector Current 9 A I F Diode Continuous Forward = C 25 A Diode Continuous Forward 5 A I FM Diode Maximum Forward Current 5 A P D Maximum Power 32 W Maximum Power = C 25 W T J Operating Junction Temperature -55 to +5 C T stg Storage Temperature Range -55 to +5 C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 C Notes: () Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit R JC (IGBT) Thermal Resistance, Junction-to-Case --.4 C/W R JC (DIODE) Thermal Resistance, Junction-to-Case C/W R JA Thermal Resistance, Junction-to-Ambient -- 4 C/W 26 Fairchild Semiconductor Corporation FGA25N2ANTD Rev. C
2 Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGA25N2ANTDTU FGA25N2ANTD TO-3P Tube N/A N/A 3 Electrical Characteristics of the IGBT = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics ES Collector Cut-Off Current V CE = V CES, = V ma I GES G-E Leakage Current = S, V CE = V ± 25 na On Characteristics (th) G-E Threshold Voltage = 25 ma, V CE = V V CE(sat) Collector to Emitter = 25 A, = 5 V V Saturation Voltage = 25 A, = 5 V, V = 5 A, = 5 V V Dynamic Characteristics C ies Input Capacitance V CE = 3 V, = V, pf C oes Output Capacitance f = MHz pf C res Reverse Transfer Capacitance pf FGA25N2ANTD 2 V, 25 A NPT Trench IGBT Switching Characteristics t d(on) Turn-On Delay Time V CC = 6 V, = 25 A, ns t r Rise Time R G =, = 5 V, Inductive Load, ns t d(off) Turn-Off Delay Time ns t f Fall Time ns E on Turn-On Switching Loss mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj t d(on) Turn-On Delay Time V CC = 6 V, = 25 A, ns t r Rise Time R G =, = 5 V, Inductive Load, ns t d(off) Turn-Off Delay Time ns t f Fall Time ns E on Turn-On Switching Loss mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj Q g Total Gate Charge V CE = 6 V, = 25 A, nc Q ge Gate-Emitter Charge = 5 V nc Q gc Gate-Collector Charge nc 26 Fairchild Semiconductor Corporation 2 FGA25N2ANTD Rev. C
3 Electrical Characteristics of DIODE = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit V FM Diode Forward Voltage I F = 25 A V t rr Diode Reverse Recovery Time I F = 25 A ns di F /dt = 2 A/ s I rr Diode Peak Reverse Recovery Current A Q rr Diode Reverse Recovery Charge nc FGA25N2ANTD 2 V, 25 A NPT Trench IGBT 26 Fairchild Semiconductor Corporation 3 FGA25N2ANTD Rev. C
4 Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, Figure 2. Typical Saturation Voltage Characteristics Figure 3. Saturation Voltage vs. Case Figure 4. Saturation Voltage vs. Temperature at Variant Current Level 3. = 5V 2V 7V 5V 2V V 9V 8V 7V = 6V Collector Current, = 5V = -4 C FGA25N2ANTD 2 V, 25 A NPT Trench IGBT A = 25A = 2.5A 4A 25A Case Temperature, [ C] Gate-Emitter Voltage, Figure 5. Saturation Voltage vs. Figure 6. Saturation Voltage vs = 2.5A 4A 25A = 2.5A 4A 25A Gate-Emitter Voltage, Gate-Emitter Voltage, 26 Fairchild Semiconductor Corporation 4 FGA25N2ANTD Rev. C
5 Typical Performance Characteristics (Continued) Figure 7. Capacitance Characteristics Capacitance [pf] Figure 9. Turn-Off Characteristics vs. Gate Resistance Switching Time [ns] Crss Ciss Coss = V, f = MHz V CC = 6V, = 5V = 25A Gate Resistance, R G [ ] td(off) tf Figure 8. Turn-On Characteristics vs. Gate Resistance Switching Time [ns] tr td(on) V CC = 6V, = 5V = 25A Gate Resistance, R G [ ] Figure. Switching Loss vs. Gate Resistance Switching Loss [mj] V CC = 6V, = 5V = 25A Eon Eoff Gate Resistance, R G [ ] FGA25N2ANTD 2 V, 25 A NPT Trench IGBT Figure. Turn-On Characteristics vs. Collector Current Figure 2. Turn-Off Characteristics vs. Collector Current = 5V, R G = Switching Time [ns] tr td(on) Switching Time [ns] = 5V, R G = td(off) tf Collector Current, Collector Current, 26 Fairchild Semiconductor Corporation 5 FGA25N2ANTD Rev. C
6 ]hjc[ztseponresmalher..e-e-5e-4e-3..rectangularpuseduration[sectypical Performance Characteristics (Continued) Figure 3. Switching Loss vs. Collector Current Switching Loss [mj] = 5V, R G = Collector Current, Figure 5. SOA Characteristics Collector Current, Ic. Ic MAX (Pulsed) Ic MAX (Continuous) Single Nonrepetitive Pulse DC Operation ms Eon Eoff s 5 s Curves must be derated linearly with increase in temperature.. Figure 4. Gate Charge Characteristics Gate-Emitter Voltage, R L = Figure 6. Turn-Off SOA Collector Current, Vcc = 2V Gate Charge, Q g [nc] 4V 6V Safe Operating Area = 5V, FGA25N2ANTD 2 V, 25 A NPT Trench IGBT Figure 7. Transient Thermal Impedance of IGBT.5.2. Collector - Emitter Voltage, V CE single pulsetlpdm t t2 Duty factor D = t / t2 Peak Tj = Pdm Zthjc + ] 26 Fairchild Semiconductor Corporation 6 FGA25N2ANTD Rev. C
7 Typical Performance Characteristics (Continued) Figure 8. Forward Characteristics Figure 9. Reverse Recovery Current Forward Current, I F 5 T J T J Forward Voltage, V F Forward Current, I F Figure 2. Stored Charge Figure 2. Reverse Recovery Time Stored Recovery Charge, Q rr [nc] di F /dt = 2A/ s di F /dt = A/ s Reverse Recovery Currnet, I rr Reverse Recovery Time, t rr [ns] di F /dt = 2A/ s di F /dt = A/ s di F /dt = A/ s di F /dt = 2A/ s FGA25N2ANTD 2 V, 25 A NPT Trench IGBT Forward Current, I F Forward Current, I F 26 Fairchild Semiconductor Corporation 7 FGA25N2ANTD Rev. C
8 Mechanical Dimensions FGA25N2ANTD 2 V, 25 A NPT Trench IGBT Figure 22. TO-3P 3L - 3LD, T3, PLASTIC, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: 26 Fairchild Semiconductor Corporation 8 FGA25N2ANTD Rev. C
9 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS FGA25N2ANTD 2 V, 25 A NPT Trench IGBT *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 26 Fairchild Semiconductor Corporation 9 FGA25N2ANTD Rev. C
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