Features. TA=25 o C unless otherwise noted

Transcription

1 P-Channel.V Specified PowerTrench MOSFET November General Description This P-Channel.V specified MOSFET uses Fairchild s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications Battery management Load switch Battery protection Features.6 A, V. R DS(ON) = V GS =. V R DS(ON) = V GS =. V Fast switching speed High performance trench technology for extremely low R DS(ON) SuperSOT TM - provides low R DS(ON) and % higher power handling capability than SOT in the same footprint D D S TM SuperSOT - G G S Absolute Maximum Ratings TA= o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage V V GSS Gate-Source Voltage ±8 V I D Drain Current Continuous.6 A P D Pulsed Maximum Power Dissipation (Note a). (Note b).6 T J, T STG Operating and Storage Junction Temperature Range to + C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 7 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 8 7 8mm units W Fairchild Semiconductor Corporation Rev F(W)

2 Electrical Characteristics = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = µa V BVDSS T J Breakdown Voltage Temperature Coefficient I D = µa, Referenced to C 6 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 6 V, V GS = V µa I GSSF Gate Body Leakage, Forward V GS = 8 V, V DS = V na I GSSR Gate Body Leakage, Reverse V GS = 8 V, V DS = V na On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = µa..8. V VGS(th) T J Gate Threshold Voltage Temperature Coefficient I D = µa, Referenced to C.7 mv/ C R DS(on) Static Drain Source V GS =. V, I D =.6 A 88 mω On Resistance V GS =. V, I D =. A 7 V GS =. V, I D =.6 A, T J= C 6 6 I D(on) On State Drain Current V GS =. V, V DS = V A g FS Forward Transconductance V DS = V, I D =.6 A 6 S Dynamic Characteristics C iss Input Capacitance V DS = V, V GS = V, pf C oss Output Capacitance f =. MHz 7 pf C rss Reverse Transfer Capacitance pf Switching Characteristics (Note ) t d(on) Turn On Delay Time V DD = V, I D = A, ns t r Turn On Rise Time V GS =. V, R GEN = 6 Ω ns t d(off) Turn Off Delay Time 6 9 ns t f Turn Off Fall Time 6. ns Q g Total Gate Charge V DS = V, I D =.6 A,. 6. nc Q gs Gate Source Charge V GS =. V. nc Q gd Gate Drain Charge.7 nc Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current. A V SD Notes: Drain Source Diode Forward Voltage V GS = V, I S =. (Note ).7. V. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) C/W when mounted on a. in pad of oz. copper. b) 7 C/W when mounted on a minimum pad. Scale : on letter size paper. Pulse Test: Pulse Width µs, Duty Cycle.% Rev F(W)

3 Typical Characteristics V GS = -.V -.V -.V -.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = -.V -.V -.V -.V -.V.. -V DS, DRAIN-SOURCE VOLTAGE (V).8 Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = -.6A V GS = -.V T J, JUNCTION TEMPERATURE ( o C) R DS(ON), ON-RESISTANCE (OHM). I D = -.8 A = o C.. = o C.6 -V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. V DS = - V = - o C o C V GS = V o C... = o C o C - o C V GS, GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev F(W)

4 Typical Characteristics -V GS, GATE-SOURCE VOLTAGE (V) I D = -.6A V DS = -V -V -V 6 C ISS COSS f = MHz VGS = V Q g, GATE CHARGE (nc) C RSS 6 8 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics... R DS(ON) LIMIT V GS =-.V R θja = 7 o C/W = o C DC s s ms ms. -V DS, DRAIN-SOURCE VOLTAGE (V) ms P(pk), PEAK TRANSIENT POWER (W)... t, TIME (sec) R θja = 7 C/W = C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D = t, TIME (sec) Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design. RθJA(t) = r(t) x RθJA R θja = 7 C/W P(pk) t t TJ - TA = P * R θja(t) Duty Cycle, D = t / t Rev F(W)

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