Features I-PAK (TO-251AA) T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units
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1 FDD376/FDU376 2V N-Channel PowerTrench MOSFET General Description Features March 25 FDD376/FDU376 This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON), fast switching speed and extremely low R DS(ON) in a small package. Applications DC/DC converter Motor Drives 5 A, 2 V R DS(ON) = 9 V GS = V R DS(ON) = V GS = 4.5 V R DS(ON) = 6 V GS = 2.5 V Low gate charge (6 nc) Fast Switching High performance trench technology for extremely low R DS(ON) D G D-PAK TO-252 (TO-252) G D S I-PAK (TO-25AA) G S Absolute Maximum Ratings T A=25 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage 2 V V GSS Gate-Source Voltage ± 2 V I D Continuous Drain C=25 C (Note 3) 5 A=25 C (Note a) 4.7 Pulsed (Note a) 6 P D Power C=25 C (Note 3) 44 A=25 C (Note a) A=25 C (Note b).6 T J, T STG Operating and Storage Junction Temperature Range -55 to +75 C Thermal Characteristics R θjc Thermal Resistance, Junction-to-Case (Note ) 3.4 C/W R θja Thermal Resistance, Junction-to-Ambient (Note a) 45 C/W R θja Thermal Resistance, Junction-to-Ambient (Note b) 96 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD376 FDD376 D-PAK (TO-252) 3 6mm 25 units FDU376 FDU376 I-PAK (TO-25) Tube N/A Fairchild Semiconductor Corp. FDD376/FDU376 Rev..3
2 Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) E AS Drain-Source Avalanche Energy Single Pulse, V DD = V, I D=7A 6 mj I AS Drain-Source Avalanche Current 7 A Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = 25 µa 2 V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 25 µa,referenced to 25 C 3 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 6 V, V GS = V µa I GSSF Gate Body Leakage, Forward V GS = 2 V, V DS = V na I GSSR Gate Body Leakage, Reverse V GS = 2 V V DS = V na FDD376/FDU376 On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 25 µa.5.5 V VGS(th) T J Gate Threshold Voltage Temperature Coefficient I D = 25 µa,referenced to 25 C 3.5 mv/ C R DS(on) Static Drain Source V GS = V, I D = 6.2 A mω On Resistance V GS = 4.5 V, I D = 4.7 A 8 V GS = 2.5 V, I D = 2.2 A 6 V GS = 4.5 V, I D = 4.7 A,T J = 25 C I D(on) On State Drain Current V GS = 4.5 V, V DS = 5 V 3 A g FS Forward Transconductance V DS = 5 V, I D = 4.7 A 65 S Dynamic Characteristics C iss Input Capacitance 882 pf V DS = V, V GS = V, C oss Output Capacitance 43 pf f =. MHz Reverse Transfer Capacitance 2 pf C rss Switching Characteristics (Note 2) t d(on) Turn On Delay Time 2 ns t r Turn On Rise Time V DD = V, I D = A, 5 27 ns t d(off) Turn Off Delay Time V GS = 4.5 V, R GEN = 6 Ω ns t f Turn Off Fall Time 6 29 ns Q g Total Gate Charge 6 23 nc Q gs Gate Source Charge V DS = V, V GS = 4.5 V I D = 4.7 A, 3.7 nc Gate Drain Charge 4 nc Q gd Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current 3.2 A V SD Drain Source Diode Forward Voltage V GS = V, I S = 3.2 A (Note 2).7.2 V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) R θja = 4 C/W when mounted on a in 2 pad of 2 oz copper b) R θja = 96 C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 3µs, Duty Cycle < 2.% Scale : on letter size paper 3. Maximum current is calculated as: PD R DS(ON) where P D is maximum power dissipation at T C = 25 C and R DS(on) is at T J(max) and V GS = V. Package current limitation is 2A FDD376/FDU376 Rev..3
3 Typical Characteristics I D, DRAIN CURRENT (A) V GS =4.5V 3.V 3.5V 8 2.5V V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 2.5V 3.V 3.5V 4.V 4.5V FDD376/FDU V DS, DRAIN-SOURCE VOLTAGE (V) I D, DRAIN CURRENT (A) Figure. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 4.7A V GS = 4.5V R DS(ON), ON-RESISTANCE (OHM) T A = 25 o C T A = 25 o C I D = 7.4A T J, JUNCTION TEMPERATURE ( o C) V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withtemperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage I D, DRAIN CURRENT (A) V DS = 5V T A =-55 o C 25 o C 25 o C I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = 25 o C 25 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD376/FDU376 Rev..3
4 Typical Characteristics V GS, GATE-SOURCE VOLTAGE (V) I D = 4.7A V DS = 5V V 8 5V Q g, GATE CHARGE (nc) CAPACITANCE (pf) C OSS C ISS C RSS V DS, DRAIN TO SOURCE VOLTAGE (V) f = MHz V GS = V FDD376/FDU376 Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics I D, DRAIN CURRENT (A). R DS(ON) LIMIT V GS = 4.5V SINGLE PULSE RθJA = 96 o C/W T A = 25 o C... DC s ms ms ms s VDS, DRAIN-SOURCE VOLTAGE (V) µs P(pk), PEAK TRANSIENT POWER (W) t, TIME (sec) SINGLE PULSE R θja = 96 C/W T A = 25 C Figure 9. Maximum Safe Operating Area Figure. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE... D = SINGLE PULSE..... t, TIME (sec) Figure. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design. RθJA(t) = r(t) * RθJA RθJA = 96 C/W P(pk) t t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t / t2 FDD376/FDU376 Rev..3
5
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Features. TA=25 o C unless otherwise noted
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