FDMA1023PZ Dual P-Channel PowerTrench MOSFET
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1 FDMA0PZ Dual P-Channel PowerTrench MOSFET 0V,.7A, 7m Features Max r DS(on) = 7m at V GS =.V, I D =.7A Max r DS(on) = 9m at V GS =.V, I D =.A Max r DS(on) = 0m at V GS =.8V, I D =.0A Max r DS(on) = 9m at V GS =.V, I D =.0A Low profile mm maximum - in the new package MicroFET x mm HBM ESD protection level > kv typical (Note ) RoHS Compliant Free from halogenated compounds and antimony oxides Pin General Description July 0 This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET X package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. FDMA0PZ Dual P-Channel PowerTrench MOSFET S G D D D S 6 D G G MicroFET X D G S D S MOSFET Maximum Ratings T A = C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage 0 V V GS Gate to Source Voltage ±8 V Drain Current -Continuous (Note a).7 I D -Pulsed 6 P D Power Dissipation (Note a) (Note b) T J, T STG Operating and Storage Junction Temperature Range to +0 C Thermal Characteristics. 0.7 A W R JA Thermal Resistance for Single Operation, Junction to Ambient (Note a) 86 R JA Thermal Resistance for Single Operation, Junction to Ambient (Note b) 7 R JA Thermal Resistance for Dual Operation, Junction to Ambient (Note c) 69 R JA Thermal Resistance for Dual Operation, Junction to Ambient (Note d) Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity 0 FDMA0PZ MicroFET X 7 8mm 000 units 009 Fairchild Semiconductor Corporation FDMA0PZ Rev.C
2 Electrical Characteristics T J = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 0 A, V GS = 0V 0 V BV DSS Breakdown Voltage Temperature I T J Coefficient D = 0 A, referenced to C mv/ C I DSS Zero Gate Voltage Drain Current V DS = 6V, V GS = 0V A I GSS Gate to Source Leakage Current V GS = ±8V, V DS = 0V ±0 A On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 0 A V V GS(th) T J r DS(on) Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On-Resistance I D = 0 A, referenced to C. mv/ C V GS =.V, I D =.7A 60 7 V GS =.V, I D =.A 7 9 V GS =.8V, I D =.0A 00 0 V GS =.V, I D =.0A 0 9 V GS =.V, I D =.7A,T J = C 8 9 g FS Forward Transconductance V DS = V, I D =.7A S Dynamic Characteristics C iss Input Capacitance 90 6 pf V DS = 0V, V GS = 0V, C oss Output Capacitance 00 pf f = MHz C rss Reverse Transfer Capacitance 90 pf m FDMA0PZ Dual P-Channel PowerTrench MOSFET Switching Characteristics t d(on) Turn-On Delay Time 9 8 ns V DD = 0V, I D = A t r Rise Time ns V GS =.V, R GEN = 6 t d(off) Turn-Off Delay Time 6 0 ns t f Fall Time 7 60 ns Q g(tot) Total Gate Charge V DD = 0V, I D =.7A 8.6 nc Q gs Gate to Source Gate Charge V GS =.V 0.7 nc Q gd Gate to Drain Miller Charge.0 nc Drain-Source Diode Characteristics I S Maximum Continuous Source-Drain Diode Forward Current. A V SD Source to Drain Diode Forward Voltage V GS = 0V, I S =.A (Note ) 0.8. V t rr Reverse Recovery Time 8 ns I F =.7A, di/dt = 00A/ s Q rr Reverse Recovery Charge nc FDMA0PZ Rev.C
3 Notes: : R JA is determined with the device mounted on a in oz. copper pad on a. x. in. board of FR- material. R JC is guaranteed by design while R JA is determined by the user's board design. (a) R JA = 86 C/W when mounted on a in pad of oz copper,." x." x 0.06" thick PCB. For single operation. (b) R JA = 7 C/W when mounted on a minimum pad of oz copper. For single operation. (c) R JA = 69 o C/W when mounted on a in pad of oz copper,. x. x 0.06 thick PCB, For dual operation. (d) R JA = o C/W when mounted on a minimum pad of oz copper. For dual operation. a) 86 o C/W when mounted on a in pad of oz copper. : Pulse Test : Pulse Width < 00us, Duty Cycle <.0% b) 7 o C/W when mounted on a minimum pad of oz copper. c) 69 o C/W when mounted on a in pad of oz copper. : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. d) o C/W when mounted on a minimum pad of oz copper. FDMA0PZ Dual P-Channel PowerTrench MOSFET FDMA0PZ Rev.C
4 Typical Characteristics T J = C unless otherwise noted -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure V GS = -.8V V GS = -.V V GS = -.0V V GS = -.V V GS = -.0V V GS = -.V PULSE DURATION = 00 s DUTY CYCLE =.0%MAX -VDS, DRAIN TO SOURCE VOLTAGE (V) I D = -.7A V GS = -.V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE.0 PULSE DURATION = 00 s V GS = -.V DUTY CYCLE =.0%MAX ID, DRAIN CURRENT(A) On Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) Figure. Normalized On-Resistance vs Junction Temperature rds(on), DRAIN TO SOURCE ON-RESISTANCE (m ) V GS = -.V I D = -.8A Figure. V GS = -.0V T J = o C V GS = -.8V V GS = -.0V V GS = -.V PULSE DURATION = 00 s DUTY CYCLE =.0%MAX T J = o C V GS, GATE TO SOURCE VOLTAGE (V) On-Resistance vs Gate to Source Voltage FDMA0PZ Dual P-Channel PowerTrench MOSFET -I D, DRAIN CURRENT (A) 6 PULSE DURATION = 00 s DUTY CYCLE =.0%MAX V DD = -V T J = o C T J = - o C V GS, GATE TO SOURCE VOLTAGE (V) Figure. Transfer Characteristics T J = o C -IS, REVERSE DRAIN CURRENT (A) E- V GS = 0V T J = o C T J = o C T J = - o C E V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMA0PZ Rev.C
5 Typical Characteristics T J = C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -ID, DRAIN CURRENT (A) I D = -.7A Q g, GATE CHARGE(nC) Figure r DS(on) LIMIT V GS =-.V SINGLE PULSE R JA =7 o C/W T A = o C V DD = -V V DD = -V V DD = -0V 000 Gate Charge Characteristics Figure VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area 00us ms 0ms 00ms s 0s DC 60 CAPACITANCE (pf) P(PK), PEAK TRANSIENT POWER (W) 00 f = MHz V GS = 0V C iss C oss C rss V DS, DRAIN TO SOURCE VOLTAGE (V) 00 0 V GS = -0V Capacitance Characteristics SINGLE PULSE R JA = 7 o C/W T A = o C I = I SINGLE PULSE t, PULSE WIDTH (s) FOR TEMPERATURES ABOVE o C DERATE PEAK CURRENT AS FOLLOWS: 0 T A Figure 0. Single Pulse Maximum Power Dissipation T A = o C 0 FDMA0PZ Dual P-Channel PowerTrench MOSFET NORMALIZED THERMAL IMPEDANCE, Z JA DUTY CYCLE-DESCENDING ORDER D = SINGLE PULSE t, RECTANGULAR PULSE DURATION (s) Figure. Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z JA x R JA + T A FDMA0PZ Rev.C
6 Dimensional Outline and Pad Layout FDMA0PZ Dual P-Channel PowerTrench MOSFET Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: FDMA0PZ Rev.C 6
7 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR tm PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT - SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS 仙童 FDMA0PZ Dual P-Channel PowerTrench MOSFET *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed Obsolete FDMA0PZ Rev.C First Production Full Production Not In Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 7
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