FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11mΩ General Description

Transcription

1 FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, mω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. Application Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture G D S I-PAK (TO-5AA) Features Max r DS(on) =.mω at V GS = V, I D = 35A November 9 Max r DS(on) = 4.mΩ at V GS = 4.5V, I D = 35A Low gate charge: Q g() = 8nC(Typ), V GS = V Low gate resistance Avalanche rated and % tested RoHS Compliant G D S Short Lead I-PAK G D S MOSFET Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage 5 V V GS Gate to Source Voltage ± V I D -Continuous (Die Limited) 54 A Drain Current -Continuous (Package Limited) 35 -Pulsed (Note ) 3 E AS Single Pulse Avalanche Energy (Note ) 7 mj P D Power Dissipation 5 W T J, T STG Operating and Storage Temperature -55 to 75 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case TO-5,TO-5 3. C/W R θja Thermal Resistance, Junction to Ambient TO-5,TO-5 C/W R θja Thermal Resistance, Junction to Ambient TO-5,in copper pad area 5 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD878 FDD878 TO-5AA 3 mm 5 units FDU878 FDU878 TO-5AA N/A(Tube) N/A 75 units FDU878 FDU878_F7 TO-5AA N/A(Tube) N/A 75 units 9 Fairchild Semiconductor Corporation FDD878/FDU878 Rev. A

2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 5μA, V GS = V 5 V ΔB VDSS ΔT J I DSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current I D = 5μA, referenced to 5 C V DS = V, V GS = V 4.3 mv/ C T J = 5 C 5 I GSS Gate to Source Leakage Current V GS = ±V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 5μA..7.5 V ΔV GS(th) ΔT J r DS(on) Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Dynamic Characteristics I D = 5μA, referenced to 5 C μa -6.5 mv/ C V GS = V, I D = 35A 8.5. V GS = 4.5V, I D = 35A. 4. V GS = V, I D = 35A T J = 75 C. 8. C iss Input Capacitance 9 pf V DS = 3V, V GS = V, C oss Output Capacitance 3 3 pf f = MHz C rss Reverse Transfer Capacitance 6 4 pf R g Gate Resistance f = MHz.4 Ω Switching Characteristics t d(on) Turn-On Delay Time 7 4 ns t V DD = 3V, I D = 35A r Rise Time 9 8 ns V GS = V, R GS = 9Ω t d(off) Turn-Off Delay Time 36 ns t f Fall Time 4 5 ns Q g Total Gate Charge V GS = V to V 8 5 nc Q V DD = 3V g Total Gate Charge V GS = V to 5V nc I D = 35A Q gs Gate to Source Gate Charge 3. nc I g =.ma Q gd Gate to Drain Miller Charge 4. nc mω Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = V, I S = 35A.96.5 V GS = V, I S = 5A.86. t rr Reverse Recovery Time I F = 35A, di/dt = A/μs 5 38 ns Q rr Reverse Recovery Charge I F = 35A, di/dt = A/μs 7 6 nc Notes: : Pulse time < 3us,Duty cycle = %. : Starting, L =.mh, I AS = A,V DD = 3V, V GS = V. V FDD878/FDU878 Rev. A

3 Typical Characteristics T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = V V GS = 4.5V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = 3.5V V GS = 3V 3 4 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. On Region Characteristics I D = 35A V GS = V T J, JUNCTION TEMPERATURE ( o C) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rds(on), ON-RESISTANCE (mω) V GS = 3V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = 3.5V V GS = 4.5V V GS = V I D, DRAIN CURRENT(A) Figure. Normalized On-Resistance vs Drain Current and Gate Voltage 4 3 I D = 5A PULSE DURATION = 8μs DUTY CYCLE =.5%MAX T J = 75 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) PULSE DURATION = 8μs DUTY CYCLE =.5%MAX T J = 75 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 75 o C T J = -55 o C E V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDD878/FDU878 Rev. A 3

4 Typical Characteristics T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) Figure 7. 5 V DD = 3V V DD = 8V V DD = 8V Q g, GATE CHARGE(nC) CAPACITANCE (pf) 3 f = MHz V GS = V. V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage T J = 5 o C... t AV, TIME IN AVALANCHE(ms) ID, DRAIN CURRENT (A) C oss C rss R θjc = 3. o C/W V GS = V V GS = 4.5V C iss T C, CASE TEMPERATURE( o C) 3 Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Case Temperature ID, DRAIN CURRENT (A) 5 LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on) SINGLE PULSE T J = MAX RATED T C = 5 o C. V DS, DRAIN TO SOURCE VOLTAGE (V) us us ms ms DC 5 ), PEAK TRANSIENT POWER (W) P(PK 7 V GS = V SINGLE PULSE T C = 5 o C FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: 75 T I = I C t, PULSE WIDTH (s) Figure. Forward Bias Safe Operating Area Figure. Single Pulse Maximum Power Dissipation FDD878/FDU878 Rev. A 4

5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc.. DUTY CYCLE-DESCENDING ORDER D = SINGLE PULSE E t, RECTANGULAR PULSE DURATION(s) Figure 3. Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C FDD878/FDU878 Rev. A 5

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