Features. Symbol Description FGA25N120AN Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T

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1 FGA25N2AN General Description Employing NPT technology, Fairchild s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features IGBT High speed switching Low saturation voltage : V CE(sat) = 2.5 High input impedance FGA25N2AN Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G G C E TO-3P E Absolute Maximum Ratings = 25 C unless otherwise noted Symbol Description FGA25N2AN Units V CES Collector-Emitter Voltage 2 V S Gate-Emitter Voltage ± 2 V Collector T = 25 C 4 A C Collector = C 25 A M () Pulsed Collector Current 75 A P D Maximum Power = 25 C 3 W Maximum Power = C 25 W T J Operating Junction Temperature -55 to +5 C T stg Storage Temperature Range -55 to +5 C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 C Notes : () Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc Thermal Resistance, Junction-to-Case --.4 C/W R θja Thermal Resistance, Junction-to-Ambient -- 4 C/W 24 Fairchild Semiconductor Corporation FGA25N2AN Rev. A

2 Electrical Characteristics of the IGBT = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector-Emitter Breakdown Voltage = V, = 3mA V B VCES / Temperature Coefficient of Breakdown T J Voltage = V, = 3mA V/ C ES Collector Cut-Off Current V CE = V CES, = V ma I GES G-E Leakage Current = S, V CE = V ± na FGA25N2AN On Characteristics (th) G-E Threshold Voltage = 25mA, V CE = V, = 5V V Collector to Emitter I V C, = 5V, CE(sat) V Saturation Voltage = 25 C = 4A, = 5V V Dynamic Characteristics C ies Input Capacitance V CE = 3V, = V, pf C oes Output Capacitance f = MHz pf C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 6 V,, ns t f Fall Time R G = Ω, = 5V, ns E on Turn-On Switching Loss Inductive Load, = 25 C mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 6 V,, ns t f Fall Time R G = Ω, = 5V, ns E on Turn-On Switching Loss Inductive Load, = 25 C mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj Q g Total Gate Charge nc V CE = 6 V,, Q ge Gate-Emitter Charge nc = 5V Q gc Gate-Collector Charge nc L e Internal Emitter Inductance Measured 5mm from PKG nh 24 Fairchild Semiconductor Corporation FGA25N2AN Rev. A

3 Collector Current, V 7V 5V 2V = V Collector Current, = 5V FGA25N2AN Fig. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics = 5V 4A Load Current Vcc = 6V load Current : peak of square wave Duty cycle : 5% Tc = Powe Dissipation = 6W. Case Temperature, [ ] Frequency [khz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency A 25A = 2.5A A 25A = 2.5A Gate-Emitter Voltage, Gate-Emitter Voltage, Fig 5. Saturation Voltage vs. Fig 6. Saturation Voltage vs. 24 Fairchild Semiconductor Corporation FGA25N2AN Rev. A

4 Capacitance [pf] Ciss Coss Crss = V, f = MHz tr td(on) V CC = 6V, = ± 5V FGA25N2AN Gate Resistance, R G [Ω] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance V CC = 6V, = ± 5V td(off) tf Switching Loss [mj] V CC = 6V, = ± 5V Eon Eoff Gate Resistance, R G [Ω] Gate Resistance, R G [Ω] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig. Switching Loss vs. Gate Resistance = ± 5V, R G = Ω tr td(on) = ± 5V, R G = Ω td(off) tf Collector Current, Collector Current, Fig. Turn-On Characteristics vs. Collector Current 24 Fairchild Semiconductor Corporation Fig 2. Turn-Off Characteristics vs. Collector Current FGA25N2AN Rev. A

5 Switching Loss [mj] = ± 5V, R G = Ω Eon Eoff Gate-Emitter Voltage, R L = 24Ω Vcc = 2V 4V 6V FGA25N2AN Collector Current, Gate Charge, Q g [nc] Fig 3. Switching Loss vs. Collector Current Fig 4. Gate Charge Characteristics Collector Current, Ic. Ic MAX (Pulsed) Ic MAX (Continuous) Single Nonrepetitive Pulse Tc = 25 o C Curves must be derated linearly with increase in temperature DC Operation ms µs 5µs.. Collector - Emitter Voltage, V CE Collector Current, Safe Operating Area = 5V, Fig 5. SOA Characteristics Fig 6. Turn-Off SOA Thermal Response [Zthjc] Pdm..2 t t. t2 t2 single pulse Duty factor D = t t // t2 t2 Peak Tj Tj = Pdm Zthjc + E-3 E-5 E-4 E-3.. Rectangular Pulse Duration [sec] Fig 7. Transient Thermal Impedance of IGBT 24 Fairchild Semiconductor Corporation FGA25N2AN Rev. A

6 Package Dimension 5.6 ± ±.2 ø3.2 ±. 9.6 ±.2 TO-3P (FS PKG CODE) 3.8 ± ± FGA25N2AN 3.9 ± ± ± ± ±.2 2. ±.2 3. ±.2. ± ± ±.3.4 ± TYP [5.45 ±.3] 5.45TYP [5.45 ±.3] Dimensions in Millimeters 24 Fairchild Semiconductor Corporation FGA25N2AN Rev. A

7 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E 2 CMOS EnSigna FACT DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FACT Quiet Series FAST FASTr FRFET GlobalOptoisolator GTO HiSeC I 2 C ImpliedDisconnect ISOPLANAR Across the board. Around the world. The Power Franchise Programmable Active Droop LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER SMART START SPM Stealth SuperFET 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET VCX Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 24 Fairchild Semiconductor Corporation Rev. I6

Features. Symbol Description FGA25N120AND Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T

Features. Symbol Description FGA25N120AND Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T FGA25N2AND General Description Employing NPT technology, Fairchild s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction