6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

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1 -PIN PHOTOTRANSISTOR CNX8A.W,, SL8.W & DESCRIPTION The CNX8A.W,, SL8.W AND, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a -pin dual in-line package. PACKAGE DIMENSIONS FEATURES Input/Output pin distance. mm UL recognized (File # E97).7 (.8).4 (.) APPLICATIONS Power supply regulators Digital logic inputs Microprocessor inputs NC SCHEMATIC SEATING PLANE. (.8). (.9).3 (8.89).33 (8.38).7 (.78).4 (.4).4 (3.9). (.4).4 (.) MIN. (.4).8 (.) 3 NC CNX8A.W SL8.W 4 3 NC 4. (.). (.4). (.4) TYP.4 (.) TYP to PIN. ANODE. CATHODE 3. NO CONNECTION 4. EMITTER. COLLECTOR. NO CONNECTION PIN. ANODE. CATHODE 3. NO CONNECTION 4. EMITTER. COLLECTOR. BASE NOTE All dimensions are in inches (millimeters) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units TOTAL DEVICE Storage Temperature T STG - to + C Operating Temperature T OPR - to + C Lead Solder Temperature T SOL for sec C Junction Temperature T J C Total Device Power T A = C P D mw EMITTER DC/Average Forward Input Current I F ma Reverse Input Voltage V R. V Forward Current - Peak (µs pulse, 3pps) I F (pk) 3. A LED Power T A = C 4 mw P Derate above C D.33 mw/ C DETECTOR Collector-Emitter Voltage V CEO V Collector-Base Voltage (CNX83A) V CBO 7 V Emitter-Collector Voltage V ECO 7 V Continuous Collector Current I C ma Detector Power T A = C mw P Derate above C D. mw/ C 4/3/ 4D

2 -PIN PHOTOTRANSISTOR CNX8A.W,, SL8.W & ELECTRICAL CHARACTERISTICS (T A = C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Device Min Typ** Max Unit EMITTER Input Forward Voltage (I F = ma) V F ALL.. V Reverse Leakage Current (V R =. V) I R ALL. µa DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage (I C =. ma, I F = ) BV CEO ALL V (I C = µa, I F = ) BV CBO 7 V Emitter-Collector Breakdown Voltage (I E = µa, I F = ) BV ECO ALL 7 V (V CE = V, I F = ) ALL.. CNX8A.W (V CE = V, I F = ) Collector-Emitter Dark Current (T A = 7 C) I CEO SL8.W (V CE = V, I F = ) SL8.W (T A = C) Collector-Base Dark Current (V CB = V) I CBO.. µa na Capacitance (V CE = V, f = MHz) C CE ALL 8 pf Note ** Typical values at T A = C Call QT Optoelectronics for more information or the phone number of your nearest distributor. United States France 33 [] Germany 49 [] 89/9.3. United Kingdom 44 [] Asia/Pacific /3/ 4D

3 -PIN PHOTOTRANSISTOR CNX8A.W,, SL8.W & TRANSFER CHARACTERISTICS (T A = C Unless otherwise specified.) DC Characteristic Test Conditions Symbol Device Min Typ** Max Units (I F = ma, V CE =.4 V) ALL 4 (I F = ma, V CE = V) CNX8A.W SL8.W Current Transfer Ratio, (I F = ma, V CE = V) SL8.W 3 Collector-Emitter (T A = C) CTR % (I F = ma, V CE = V) (I F = ma, V CE = V) CNX8A.W SL8.W (I F = ma, V CE = V) SL8.W (T A = C) Saturation Voltage (I F = ma, I C = 4 ma) V CE(sat) ALL.9.4 V Turn-on Time Turn-off Time ISOLATION CHARACTERISTICS (I C = ma, V CC = V, R L =!) ALL 3 (I C = ma, V CC = V, R L = k!) (I F = ma, V CC = V, R L = k!) ALL t on SL8.W (I C = ma, V CC = V, R L =!) ALL 3 (I C = ma, V CC = V, R L = k!) (I F = ma, V CC = V, R L = k!) ALL t off SL8.W Characteristic Test Conditions Symbol Min Typ** Max Units Input-Output Isolation Voltage (I I-O "# µa, min.) V ISO 3 Vac(rms) Isolation Resistance (V I-O = VDC) R ISO! Isolation Capacitance (V I-O = $, f = MHz) C ISO. pf External air gap (clearance) 9. mm External tracking path (creepage) 8. mm Internal plastic gap (clearance). mm Note ** Typical values at T A = C µs µs ORDERING INFORMATION Order Entry Option Identifier Description 3.3W VDE 884 4/3/ 4D

4 -PIN PHOTOTRANSISTOR CNX8A.W,, SL8.W & TYPICAL CHARACTERISTICS VF, FORWARD VOLTAGE (VOLTS) TA = - C PULSE ONLY PULSE OR DC C C.. IF, LED FORWARD CURRENT (ma) IF, LED INPUT CURRENT (ma) IC, OUTPUT COLLECTOR CURRENT (NORMALIZED). NORMALIZED TO: IF = ma Figure. LED Forward Voltage versus Forward Current Figure. Output Current versus Input Current IC, COLLECTOR CURRENT (ma) I F = ma V CE - COLLECTOR-EMITTER VOLTAGE (V) Figure 3. Collector Current versus Collector-Emitter Voltage IC, OUTPUT COLLECTOR CURRENT (NORMALIZED) NORMALIZED TO TA = C TA, AMBIENT TEMPERATURE ( C) Figure 4. Output Current versus Ambient Temperature ICEO, COLLECTOR-EMITTER DARK CURRENT (NORMALIZED) NORMALIZED TO: VCE = V TA = C VCE = 3 V V TA, AMBIENT TEMPERATURE ( C) C, CAPACITANCE (pf) CLED CCE V, VOLTAGE (VOLTS) f = MHz Figure. Dark Current versus Ambient Temperature Figure. Capacitance versus Voltage 4/3/ 4D

5 Recommended Pad Package Layout for Dimensions (Surface Mount) Surface Mount Leadform.7 (.78). (.).4 (.4). (.4).9 (7.49).3 (.7) Note All dimensions are in inches (millimeters)

6 MARKING INFORMATION CNX8A V XX YY K 3 4 Definitions Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE 3 option See order entry table) 4 Two digit year code, e.g., 3 Two digit work week ranging from to 3 Assembly package code Reflow Profile (Black Package, No Suffix) Temperature ( C) 3 C, 3 s C peak Time above 83 C, sec Ramp up = 3C/sec Peak reflow temperature: C (package surface temperature) Time of temperature higher than 83 C for seconds One time soldering reflow is recommended Time (Minute)

7 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E CMOS EnSigna FACT FACT Quiet Series DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC I C i-lo ImpliedDisconnect Across the board. Around the world. The Power Franchise Programmable Active Droop ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power47 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes SILENT SWITCHER SMART START SPM. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Stealth SuperFET SuperSOT -3 SuperSOT - SuperSOT -8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I3

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