FEATURES BV DSS. Characteristic Value Units Drain-to-Source Voltage. 115 Continuous Drain Current (T C =100 )

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1 NChannel Small Signal MOSFET 2N7002MTF FEATURES B DSS = 60! Lower R DS(on)! Improved Inductive Ruggedness! Fast Switching Times! Lower Input Capacitance! Extended Safe Operating Area! Improved High Temperature Reliability R DS(on) = 5.0 Ω I D = 200 SOT23 Product Summary 1.Gate 2. Source 3. Drain Part Number B DSS R DS (on) I D 2N Ω 115 Absolute Maximum Ratings Symbol DSS I D I DM GS P D T J, T STG Characteristic alue Units DraintoSource oltage 60 Continuous Drain Current (T C =25 ) 115 Continuous Drain Current (T C =100 ) 73 Drain CurrentPulsed GatetoSource oltage Total Power Dissipation (T C =25 ) Linear Derating Factor Operating Junction and Storage Temperature Range ± to +150 W mw/ Thermal Resistance Symbol R θja Characteristic Typ. Max. Units JunctiontoAmbient 625 /W Rev. C1

2 2N7002MTF NChannel Small Signal MOSFET Electrical Characteristics (T C =25 unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition B DSS DrainSource Breakdown oltage 60 GS = 0, I D = 250µA GS(th) Gate Threshold oltage DS = GS, I D = 250µA I GSS GateSource Leakage, Forward GateSource Leakage, Reverse na GS = 20 GS = 20 I DSS DraintoSource Leakage Current µa GS = 40 GS = 40, T C = 125 I D(ON) OnState DrainSource Current 0.5 A DS = 10, GS = 10 R DS(on) Static DrainSource OnState Resistance Ω GS = 10, I D = 0.5A g fs Forward Transconductance S DS = 15, I D = 0.2A C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance pf DS = 25, GS = 0, f = 1.0MHz t d(on) t r t d(off) t f TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time ns DD = 30, I D = 0.2A R G = 25Ω 23 SourceDrain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition I S I SD Continuous Source Current Pulse Source Current Integral reverse pndiode In the MOSFET SD Diode Forward oltage T A = 25, I S = 115 GS = 0 Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 Pulse Test : Pulse Width = 250μs, Duty Cycle 2% 3 Essentially Independent of Operating Temperature

3 NChannel Small Signal MOSFET 2N7002MTF

4 2N7002MTF NChannel Small Signal MOSFET

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J108/J109/J110/MMBFJ108

J108/J109/J110/MMBFJ108 N-Channel Switch This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 8. J8/J9/J/MMBFJ8 TO-92. Drain 2. Source 3. Gate 3 2 SuperSOT-3