TIS73/TIS74 TIS73/TIS74

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1 TIS73/ TIS73/ N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 4. Absolute Maximum Ratings * T A =2 C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 1 degrees C. 2. These are steady state limits. The factory should be coulted on applicatio involving pulsed or low duty cycle operatio. TO-92 Symbol Parameter alue Units DG Drain-Gate oltage 30 Gate-Source oltage -30 I GF Forward Gate Current ma T J, T STG Operating and Storage Junction Temperature Range - ~ +1 C 1 1. Gate 2. Source 3. Drain Electrical Characteristics T A =2 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics (BR)S Gate-Source Breakdown oltage I G = 1.0µA, DS = 0-30 I S Gate Reverse Current = 1, DS = 0 = 1, DS = 0, T a = C I D (off) Drain Cutoff Leakage Current DS = 1, = - DS = 1, = -, T a = C (off) Gate-Source Cutoff oltage DS = 1, I D = 4.0nA TIS73 On Characteristics * I DSS Zero-Gate oltage Drain Current * DS = 1, = 0 TIS73 r DS (on) Drain-Source On Resistance DS 0.1, = 0 TIS73 f = 1.0KHz Small Signal Characteristics * Pulse Test: Pulse Width 300µs, Duty Cycle 3.0% C iss Input Capacitance DS = 0, = -, f = 1.0MHz 18 pf C rss Reverse Trafer Capacitance DS = 0, = -, f = 1.0MHz 8.0 pf Switching Characteristics t r Rise Time (off) = -, (on) = 0, I D = ma, DS = TIS t on Turn-On Time (off) = -, (on) = 0, I D = ma, DS = 6.0 t off Turn-Off Time (off) = -, (on) = 0, I D = ma, DS = TIS na µa na µa ma ma Ω Ω 02 Fairchild Semiconductor Corporation Rev. B, July 02

2 Thermal Characteristics T A =2 C unless otherwise noted Symbol Parameter Max. Units P D Total Device Dissipation Derate above 2 C mw mw/ C R θjc Thermal Resistance, Junction to Case 12 C/W R θja Thermal Resistance, Junction to Ambient 37 C/W TIS73/ 02 Fairchild Semiconductor Corporation Rev. B, July 02

3 Typical Characateristics I - DRAIN CURRENT (ma) DSS 0 0 PULSE GATE-SOURCE OLTAGE() rds - DRAIN ON RESISTANCE ( Ω) ON 30 = GATE-SOURCE OLTAGE() TIS73/ Figure 1. Trafer Characteristics Figure 2. Trafer Characteristics gfs - TRANSCONDUCTANCE (mmho) GATE-SOURCE OLTAGE() DS=1 =0 DS=1 ID=3mA Cis (Crs) - CAPACITANCE (pf) 0-2 C is ( DS = ) C ( = 0 ) rs DS f = MHz GATE-SOURCE OLTAGE () -14 Figure 3. Trafer Characteristics Figure 4. Capacitance vs oltage I - DRAIN CURRENT (ma) D = TYP (OFF) = DRAIN -SOURCE OLTAGE () DS T A = C P - POWER DISSIPATION (mw) D TO o TEMPERATURE ( C) Figure. Common Drain-Source Characteristics Figure 6. Power Dissipation vs Ambient Temperature 02 Fairchild Semiconductor Corporation Rev. B, July 02

4 Package Demeio TO-92 TIS73/ MAX 0.46 ± TYP [1.27 ±0.] 1.02 ± TYP [1.27 ±0.] 3.60 ±0. (R2.29) (0.2) ± ± Dimeio in Millimeters 02 Fairchild Semiconductor Corporation Rev. B, July 02

5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor ow or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSOLT DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet series FAST DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with itructio for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FASTr FRFET GlobalOptoisolator GTO HiSeC I 2 C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition SMART START SPM Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTralation UHC UltraFET CX Advance Information Formative or In Design This datasheet contai the design specificatio for product development. Specificatio may change in any manner without notice. Preliminary First Production This datasheet contai preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contai final specificatio. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contai specificatio on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 02 Fairchild Semiconductor Corporation Rev. H7

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J108/J109/J110/MMBFJ108

J108/J109/J110/MMBFJ108 N-Channel Switch This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 8. J8/J9/J/MMBFJ8 TO-92. Drain 2. Source 3. Gate 3 2 SuperSOT-3