KSK595 KSK595. Si N-channel Junction FET

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Capacitor Microphone Applications Especially Suited for use in Audio, Telephone Capacitor Microphones Excellent Voltage Characteristic Excellent Transient Characteristic 3 2 SOT-23.Drain 2. Source 3.

1 Capacitor Microphone Applications Especially Suited for use in Audio, Telephone Capacitor Microphones Excellent Voltage Characteristic Excellent Transient Characteristic 3 2 SOT-23.Drain 2. Source 3. Gate Si N-channel Junction FET Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol Parameter Ratings Units V GDO Gate-Drain Voltage -2 V I G Gate Current ma I D Drain Current ma P D Power Dissipation mw T J Junction Temperature 5 C T STG Storage Temperature -55 ~ 5 C Electrical Characteristics T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BV GDO Gate-Drain Breakdown Voltage I G = -ua -2 V V GS (off) Gate-Source Cut-off Voltage V DS =5V, I D =µa V I DSS Drain Current V DS =5V, V GS = 5 35 µa ly FS l Forward Transfer Admittance V DS =5V, V GS =, f=mhz.4.2 ms C iss Input Capacitance V DS =5V, V GS =, f=mhz 3.5 pf C rss Output Capacitance V DS =5V, V GS =, f=mhz.65 pf 22 Fairchild Semiconductor Corporation Rev. B, April 22

2 Specified Test Circuit T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units G V Voltage Gain V IN =mv, f=khz -3 db G V V Reduced Voltage Characteristic V IN =mv, f=khz db V CC =4.5V.5V G V F Frequency Characteristic f=khz to Hz - db Z IN Input Resistance f=khz 25 MΩ Z O Output Resistance f=khz 7 Ω THD Total Harmonic Distortion V IN =3mV, f=khz % V NO Output Noise Voltage V IN =, A CURVE - db RL=k V CC =4.5V V CC =.5V Cin=5p + 33u OSC VTVM V THD B A k 22 Fairchild Semiconductor Corporation Rev. B, April 22

3 Typical Characteristics IDSS = 2µA.4 VDS = 5V 4 ID[µA], DRAIN CURRENT VGS = VGS = -.V VGS = -.2V ID[mA], DRAIN CURRENT VGS = -.3V VGS = -.4V VDS[V], DRAIN-SOURCE VOLTAGE VGS[V], GATE-SOURCE VOLTAGE Figure. Figure 2. VGS(off)[V], GATE-SOURCE CUT-OFF VOLTAGE VDS = 5V ID = µa ID[µA], DRAIN CURRENT VGS = VGS = -.V VGS = -.2V VGS = -.3V VGS = -.4V VGS = -.5V IDSS = 5µA VGS = -.6V IDSS[mA], DRAIN CURRENT VDS[V], DRAIN-SOURCE VOLTAGE Figure 3. Figure 4. lfsl [ms], FORWARD TRANSFER ADMITTANCE.. V DS = 5V V GS = f=khz C iss [pf], INPUT CAPACITANCE I DSS [ma], DRAIN CURRENT V DS [V], DRAIN-SOURCE VOLTAGE Figure 5. Figure Fairchild Semiconductor Corporation Rev. B, April 22

4 Typical Characteristics (Continued) C rss [pf], OUTPUT CAPACITANCE V GS = f = MHz VNO[dB], OUTPUT NOISE VOLTAGE VNO:VCC =4.5V VI =, A CURVE RL = KΩ. V DS [V], DRAIN-SOURCE VOLTAGE -2 Figure 7. Figure ZI:VCC =4.5V 4 ZI[MΩ], INPUT RESISTANCE VIN = mv f = khz P C [mw], POWER DISSIPATION T a [ o C], AMBIENT TEMPERATURE Figure 9. Figure. ZO[Ω], OUTPUT RESISTANCE ZO:VCC =4.5V VIN = mv f = khz THD[%], TOTAL HARMONIC DISTORTION THD:VCC = 4.5V VIN = 3mV f = khz IDSS:VDS = 5V 2 Figure. Figure Fairchild Semiconductor Corporation Rev. B, April 22

5 Typical Characteristics (Continued) GVV - I DSS[dB], REDUCED VOLTAGE CHARACTERISTIC GVV:VCC = 4.5V.5V VIN = mv f = khz -6 THD[%], TOTAL HARMONIC DISTORTION IDSS = µa IDSS = 4µA IDSS = 2µA VIN[mV], INPUT VOLTAGE THD:VCC = 4.5V VIN = 3mV f = khz IDSS:VDS = 5V Figure 3. Figure 4. GV[dB], VOLTAGE GAIN GV:VCC = 4.5V VIN = mv RL = kω IDSS:VDS = 5V -8 - Figure Fairchild Semiconductor Corporation Rev. B, April 22

6 Package Demensions SOT-23.4 ± ±..97REF.3 ±..45~.6.4 ± ±..96~.4.2 MIN.3~..38 REF ±.3.95 ±.3.9 ±.3.58REF Dimensions in Millimeters 22 Fairchild Semiconductor Corporation Rev. B, April 22

7 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet Series STAR*POWER is used under license FAST FASTr FRFET GlobalOptoisolator GTO HiSeC I 2 C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER SMART START SPM STAR*POWER Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UHC UltraFET VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 22 Fairchild Semiconductor Corporation Rev. H5

FJN13003 FJN NPN Silicon Transistor Planar Silicon Transistor

FJN13003 FJN NPN Silicon Transistor Planar Silicon Transistor FJN3003 FJN3003 High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 2W NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings T C =25 C unless