FFPF60B150DS. 120 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +150 C

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1 FFPF6B5DS FFPF6B5DS Features High voltage and high reliability High speed switching Modulation diode / Damper diode Low conduction loss Modulation diode / Damper diode TO-22F Applications (Modulation + Damper) diode designed for horizontal deflection circuits in C-TVs & monitors 2 3 Damper Modulation DAMPER + MODULATION DIODE Absolute Maximum Ratings (Modulation) =25 C unless otherwise noted Symbol Parameter Value Units V RRM Peak Repetitive Reverse Voltage 6 V I F(AV) Average Rectified Forward = C 2 A I FSM Non-repetitive Peak Surge Current 2 A 6Hz Single Half-Sine Wave, T STG Operating Junction and Storage Temperature - 65 to +5 C Absolute Maximum Ratings (Damper) =25 C unless otherwise noted Symbol Parameter Value Units V RRM Peak Repetitive Reverse Voltage 5 V I F(AV) Average Rectified Forward = C 6 A I FSM Non-repetitive Peak Surge Current 6 A 6Hz Single Half-Sine Wave, T STG Operating Junction and Storage Temperature - 65 to +5 C Thermal Characteristics Symbol Parameter Value Units R θjc Maximum Thermal Resistance, Junction to Case 3.3 C/W 2 Fairchild Semiconductor Corporation Rev. A, March 2

2 Electrical Characteristics*(Modulation) =25 C unless otherwise noted Symbol Parameter Min. Typ. Max. Units V FM Maximum Instantaneous Forward Voltage V I RM t rr I rr Q rr I F = 2A I F = 2A = 25 C = C Maximum Instantaneous Reverse rated V R = 25 C = C Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (I F =2A, di/dt = 2A/µs) µa ns A nc FFPF6B5DS * Pulse Test: Pulse Width=3µs, Duty Cycle=2% Electrical Characteristics*(Damper) =25 C unless otherwise noted Symbol Parameter Min Typ Max Units V FM Maximum Instantaneous Forward Voltage V I RM I F = 6A I F = 6A = 25 C = C Maximum Instantaneous Reverse rated V R = 25 C = C t rr Maximum Reverse Recovery Time 7 ns (I F =.A, di/dt = 5A/µs) t fr Maximum Forward Recovery Time 35 ns (I F =6.5A, di/dt = 5A/µs) V FRM Maximum Forward Recovery Voltage 7 V µa * Pulse Test: Pulse Width=3µs, Duty Cycle=2% 2 Fairchild Semiconductor Corporation Rev. A, March 2

3 Typical Characteristics Forward Current, I F 4 = o C Forward Current, I F 5 = 25 o C FFPF6B5DS Forward Voltage, V F Forward Voltage, V F Figure. Typical Forward Characteristics (Modulation Diode) Figure 2. Typical Forward Characteristics (Damper Diode) Reverse Current, I R [ua].. = o C Reverse Current, I R [µa].. = 25 o C = o C Figure 3. Typical Reverse Current vs. Reverse Voltage (Modulation Diode) Figure 4. Typical Reverse Current vs. Reverse Voltage (Damper Diode) 2 Typical Capacitance at V = 78 pf 2 Typical Capacitance at V = pf Capacitance, Cj [pf] 5 5 Capacitance, Cj [pf] Figure 5. Typical Junction Capacitance (Modulation Diode) Figure 6. Typical Junction Capacitance (Damper Diode) 2 Fairchild Semiconductor Corporation Rev. A, March 2

4 Typical Characteristics Reverse Recovery Time, t rr [ns] I F = 2A Reverse Recovery Time, t rr [ns] di/dt = 5A/µs di/dt = A/µs FFPF6B5DS 4 5 di/dt [A/us] Forward Current, I F Figure 7. Typical Reverse Recovery Time vs. di/dt (Modulation Diode) Figure 8. Typical Reverse Recovery Time vs. di/dt (Damper Diode) Reverse Recovery Current, I rr I F = 2A 5 di/dt [A/us] Average Forward Current, I F(AV) DC Case Temperature, [ o C] Figure 9. Typical Reverse Recovery Current vs. di/dt (Modulation Diode) Figure. Forward Current Derating Curve (Damper Diode) Average Forward Current, I F(AV) DC Case Temperature, [ o C] Figure. Forward Current Derating Curve (Modulation Diode) 2 Fairchild Semiconductor Corporation Rev. A, March 2

5 Package Dimensions TO-22F FFPF6B5DS 3.3 ±..6 ±.2 ø3.8 ± ±.2 (7.) (.7) 5.8 ± ±.2 (.x45 ) 5.87 ± ±.3 MAX.47.8 ±. (3 ).35 ±. # ± TYP [2.54 ±.2] 2.54TYP [2.54 ±.2] 9.4 ± ±.2 Dimensions in Millimeters 2 Fairchild Semiconductor Corporation Rev. A, March 2

6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet Series DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAST FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MICROWIRE OPTOLOGIC OPTOPLANAR FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER SMART START Star* Power Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC UltraFET VCX 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 2 Fairchild Semiconductor Corporation Rev. H

Data Sheet January Features. Packaging

Data Sheet January Features. Packaging RHRP4, RHRP6 Data Sheet January 22 A, 4V - 6V Hyperfast Diodes The RHRP4 and RHRP6 are hyperfast diodes with soft recovery characteristics ( < 3ns). They have half the recovery time of ultrafast diodes