MJD31/31C. Symbol Parameter Value Units V CBO Collector-Base Voltage : MJD31 : MJD31C

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1 MJD3/3C MJD3/3C General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP3 and TIP3C D-PAK I-PAK.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C unless otherwise noted Symbol Parameter alue Units CBO Collector-Base oltage : MJD3 : MJD3C CEO Collector-Emitter oltage : MJDH3 : MJD3C EBO Emitter-Base oltage 5 Collector Current (DC) 3 A P Collector Current (Pulse) A I B Base Current A P C Collector Dissipation (T C =25 C) 5 W Collector Dissipation (T a =25 C).56 W T J Junction Temperature 50 C T STG Storage Temperature - 65 ~ 50 C Electrical Characteristics T C =25 C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units CEO (sus) * Collector-Emitter Sustaining oltage : MJD3 : MJD3C EO Collector Cut-off Current : MJD3 : MJD3C ES Collector Cut-off Current : MJD3 : MJD3C * Pulse Test: PW 300µs, Duty Cycle 2% = 30mA, I B = CE = 40, I B = 0 CE = 60, I B = 0 CE = 40, BE = 0 CE = 00, BE = 0 I EBO Emitter Cut-off Current BE = 5, = 0 ma h FE * DC Current Gain CE = 4, = A CE = 4, = 3A CE (sat) * Collector-Emitter Saturation oltage = 3A, I B = 375mA.2 BE (on) * Base-Emitter ON oltage CE = 4A, = 3A.8 f T Current Gain Bandwidth Product CE = 0, = 500mA 3 MHz 0 Fairchild Semiconductor Corporation Rev. A2, June 0

2 Typical Characteristics h FE, DC CURRENT GAIN CE = 2 BE(sat), CE(sat)[], SATURATION OLTAGE 0 0. BE(sat) CE(sat) 0.0 E IC IC = 0 IB MJD3/3C Figure. DC current Gain Figure 2. Base-Emitter Saturation oltage Collector-Emitter Saturation oltage 000 t C = 0.I B Cob[pF], CAPACITANCE 00 0 t R, t D [µs], TURN ON TIME 0. t R, CC =30 t D, BE (off)=2 t R, CC = CB[], COLLECTOR BASE OLTAGE Figure 3. Collector Capacitance Figure 4. Turn On Time tc = 0.IB 0 P (max) tf,tstg[µs], TURN OFF TIME 0. tstg tf, CC=30 tf, CC(off)=0 0. (max) DC ms 500µs 3 00µs 3C IC CE [], COLLECTOR-EMITTER OLTAGE Figure 5. Turn Off Time Figure 6. Safe Operating 0 Fairchild Semiconductor Corporation Rev. A2, June 0

3 Typical Characteristics (Continued) MJD3/3C P C [W], POWER DISSIPATION T C [ o C], CASE TEMPERATURE Figure 7. Power Derating 0 Fairchild Semiconductor Corporation Rev. A2, June 0

4 Package Demensions D-PAK MJD3/3C 6.60 ± ±0.30 (0.50) (4.34) (0.50) 0.70 ± ± ± ± ±0. MAX TYP [2.30±0.] 2.70 ± ± ± ± TYP [2.30±0.] 6.0 ± ± ± ± ± ±0. (5.34) (5.04) (.50) (2XR0.25) (0.70) MIN ± ± ±0. (0.0) (3.05) (0.90) (.00) 0.76 ±0.0 Dimensions in Millimeters 0 Fairchild Semiconductor Corporation Rev. A2, June 0

5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSOLT DenseTrench DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet Series STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER SMART START 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition STAR*POWER Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TruTranslation TinyLogic UHC UltraFET CX Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 0 Fairchild Semiconductor Corporation Rev. H3

KSA1220/1220A. Symbol Parameter Ratings Units V CBO Collector-Base Voltage : KSA1220 : KSA1220A V CEO Collector-Emitter Voltage : KSA1220 : KSA1220A

KSA1220/1220A. Symbol Parameter Ratings Units V CBO Collector-Base Voltage : KSA1220 : KSA1220A V CEO Collector-Emitter Voltage : KSA1220 : KSA1220A Audio Frequency Power Amplifier High Frequency Power Amplifier Complement to KSC2690/KSC2690A TO-26. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C unless