Size: px
Start display at page:

Download ""

Transcription

1 Distributed by: The content and copyrights of the attached material are the property of its owner.

2 G S D 2N5457 2N5458 2N5459 TO-92 This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. MMBF5457 MMBF5458 MMBF5459 G SOT-23 Mark: 6D / 61S / 6L D S NOTE: Source & Drain are interchangeable Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter alue Units DG Drain-Gate oltage 25 GS Gate-Source oltage - 25 I GF Forward Gate Current 10 ma T J, T stg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25 C unless otherwise noted Symbol Characteristic Max Units 2N *MMBF P D Total Device Dissipation Derate above 25 C mw mw/ C R θjc Thermal Resistance, Junction to Case 125 C/W R θja Thermal Resistance, Junction to Ambient C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation

3 Electrical Characteristics OFF CHARACTERISTICS TA = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units (BR)GSS Gate-Source Breakdown oltage I G = 10 µa, DS = 0-25 I GSS Gate Reverse Current GS = -15, DS = 0 GS = -15, DS = 0, T A = 100 C GS(off) Gate-Source Cutoff oltage DS = 15, I D = 10 na GS Gate-Source oltage DS = 15, I D = 100 µa 5457 DS = 15, I D = 200 µa 5458 DS = 15, I D = 400 µa 5459 ON CHARACTERISTICS I DSS Zero-Gate oltage Drain Current* DS = 15, GS = SMALL SIGNAL CHARACTERISTICS g fs Forward Transfer Conductance* DS = 15, GS = 0, f = 1.0 khz µmhos µmhos µmhos g os Output Conductance* DS = 15, GS = 0, f = 1.0 khz µmhos C iss Input Capacitance DS = 15, GS = 0, f = 1.0 MHz pf C rss Reverse Transfer Capacitance DS = 15, GS = 0, f = 1.0 MHz pf NF Noise Figure DS = 15, GS = 0, f = 1.0 khz, R G = 1.0 megohm, BW = 1.0 Hz *Pulse Test: Pulse Width 300 ms, Duty Cycle 2% (continued) na na ma ma ma 3.0 db 5 Typical Characteristics

4 Typical Characteristics (continued) Common Drain-Source (continued) Parameter Interaction Output Conductance vs. Drain Current Transconductance vs. Drain Current

5 Typical Characteristics (continued) Channel Resistance vs. Temperature Leakage Current vs. oltage (continued) Noise oltage vs. Frequency Capacitance vs. oltage 5 P - POWER DISSIPATION (mw) D SOT-23 Power Dissipation vs Ambient Temperature TO o TEMPERATURE ( C)

6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSOLT DOME E 2 CMOS TM EnSigna TM FACT FACT Quiet Series FAST DISCLAIMER LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC CX FAIRCHILD SEMICONDUCTOR RESERES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TA = 25 C unless otherwise noted. Symbol Parameter Value Units G S D PN PN PN TO-92 This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance

More information

SOT-23 Mark: 6U / 6T. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

SOT-23 Mark: 6U / 6T. TA = 25 C unless otherwise noted. Symbol Parameter Value Units G S D J J TO-92 MMBFJ MMBFJ G SOT-23 Mark: 6U / 6T D S NOTE: Source & Drain are interchangeable This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier,

More information

J108/J109/J110/MMBFJ108

J108/J109/J110/MMBFJ108 N-Channel Switch This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 8. J8/J9/J/MMBFJ8 TO-92. Drain 2. Source 3. Gate 3 2 SuperSOT-3

More information

SOT-23 Mark: 62V / 62W / 62X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

SOT-23 Mark: 62V / 62W / 62X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units G S D J210 J211 J212 TO-92 This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process

More information

TIS73/TIS74 TIS73/TIS74

TIS73/TIS74 TIS73/TIS74 TIS73/ TIS73/ N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 4. Absolute Maximum

More information

FEATURES BV DSS. Characteristic Value Units Drain-to-Source Voltage. 115 Continuous Drain Current (T C =100 )

FEATURES BV DSS. Characteristic Value Units Drain-to-Source Voltage. 115 Continuous Drain Current (T C =100 ) NChannel Small Signal MOSFET 2N7002MTF FEATURES B DSS = 60! Lower R DS(on)! Improved Inductive Ruggedness! Fast Switching Times! Lower Input Capacitance! Extended Safe Operating Area! Improved High Temperature

More information

Features. SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units

Features. SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units P-Channel.5V Specified PowerTrench MOSFET February General Description This P-Channel.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been

More information

Features. (Note 1b) 1.2. (Note 1c) 1.0. (Note 1c) 125

Features. (Note 1b) 1.2. (Note 1c) 1.0. (Note 1c) 125 NDS97 V P-Channel PowerTrench MOSFET May NDS97 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power

More information

Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 10 Power Dissipation for Single Operation (Note 1a) 2

Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 10 Power Dissipation for Single Operation (Note 1a) 2 V N-Channel PowerTrench MOSFET General Description These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

More information

NDS0605 P-Channel Enhancement Mode Field Effect Transistor

NDS0605 P-Channel Enhancement Mode Field Effect Transistor NDS65 P-Channel Enhancement Mode Field Effect Transistor July NDS65 General Description These P-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density,

More information

Features S 1. TA=25 o C unless otherwise noted

Features S 1. TA=25 o C unless otherwise noted P-Channel.5V PowerTrench Specified MOSFET January General Description This P-Channel.5V specified MOSFET uses a rugged gate version of Fairchild s advanced PowerTrench process. It has been optimized for

More information

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted September BSS38 BSS38 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary,

More information

KSE13006/ Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 R L = 50Ω

KSE13006/ Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 R L = 50Ω KSE3006/3007 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3006/3007 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum

More information

Characteristic Value Units Drain-to-Source Voltage. 28 Continuous Drain Current (T C =100 C)

Characteristic Value Units Drain-to-Source Voltage. 28 Continuous Drain Current (T C =100 C) $GYDQFHG 3RZHU 026)(7 IRL540A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10µA (Max.)

More information

Features R DS(ON) = V GS = 4.5 V. TA=25 o C unless otherwise noted

Features R DS(ON) = V GS = 4.5 V. TA=25 o C unless otherwise noted FDN68P 6V P-Channel Logic Level PowerTrench MOSFET October FDN68P General Description This 6V P-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management

More information

ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)

ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated) FLLD261 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD....50 mw @ TA = 25 Deg C BV....200 V (MIN) @ IR = 5 ua ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature -55

More information

KSA1220/1220A. Symbol Parameter Ratings Units V CBO Collector-Base Voltage : KSA1220 : KSA1220A V CEO Collector-Emitter Voltage : KSA1220 : KSA1220A

KSA1220/1220A. Symbol Parameter Ratings Units V CBO Collector-Base Voltage : KSA1220 : KSA1220A V CEO Collector-Emitter Voltage : KSA1220 : KSA1220A Audio Frequency Power Amplifier High Frequency Power Amplifier Complement to KSC2690/KSC2690A TO-26. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C unless

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted 3V P-Channel PowerTrench MOSFET October 2 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management

More information

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TA = 25 C unless otherwise noted. Symbol Parameter Value Units PN5432 PN PN PN5432 / PN / PN G S D TO-92 N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 58. See J108

More information

Features S 1. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 6 Power Dissipation for Single Operation (Note 1a) 0.

Features S 1. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 6 Power Dissipation for Single Operation (Note 1a) 0. V N-Channel PowerTrench MOSFET October General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

More information

Features. I 2 -PAK FQI Series

Features. I 2 -PAK FQI Series 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

Features. 175 C maximum junction temperature rating. T A =25 o C unless otherwise noted

Features. 175 C maximum junction temperature rating. T A =25 o C unless otherwise noted FDB62P 2V P-Channel.8V Specified PowerTrench MOSFET January 24 FDB62P General Description This P-Channel power MOSFET uses Fairchild s low voltage PowerTrench process. It has been optimized for power management

More information

KSE13008/ Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009

KSE13008/ Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009 KSE3008/3009 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3008/3009 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum

More information

QFET TM FQT4N20L. Features. SOT-223 FQT Series

QFET TM FQT4N20L. Features. SOT-223 FQT Series 200V LOGIC N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

More information

Features. TO-3P FQA Series

Features. TO-3P FQA Series FQA11N90 FQA11N90 900V N-Channel MOSFET September 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

Features. TO-220 FQP Series

Features. TO-220 FQP Series FQP70N10 FQP70N10 100V N-Channel MOSFET August 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

Features. TA=25 o C unless otherwise noted. (Note 1b) 0.9. (Note 1c) 0.7

Features. TA=25 o C unless otherwise noted. (Note 1b) 0.9. (Note 1c) 0.7 April V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage

More information

KSP42/43. Symbol Parameter Value Units V CBO V V V CEO

KSP42/43. Symbol Parameter Value Units V CBO V V V CEO High oltage Transistor Collector-Emitter oltage: CEO =KSP42: KSP43: Collector Power Dissipation: P C (max)=625mw NPN Epitaxial Silicon Transistor TO-92. Emitter 2. Base 3. Collector Absolute Maximum Ratings

More information

MJE170/171/172 MJE170/171/172. PNP Epitaxial Silicon Transistor. Low Power Audio Amplifier Low Current, High Speed Switching Applications

MJE170/171/172 MJE170/171/172. PNP Epitaxial Silicon Transistor. Low Power Audio Amplifier Low Current, High Speed Switching Applications Low Power Audio Amplifier Low Current, High Speed Switching Applications PNP Epitaxial Silicon Transistor 1 TO-126 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings T C =25 C unless otherwise noted

More information

2N5551- MMBT5551 NPN General Purpose Amplifier

2N5551- MMBT5551 NPN General Purpose Amplifier 2N5551- MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted Dual N-Channel.V Specified PowerTrench MOSFET July 3 General Description These N-Channel.V specified MOSFETs use Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power

More information

QFET TM FQL40N50. Features. TO-264 FQL Series

QFET TM FQL40N50. Features. TO-264 FQL Series 500V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This

More information

Distributed by: www.jameco.com -8-8-4242 The content and copyrights of the attached material are the property of its owner. Connection Diagram 448 448SE SOT-2 2 5H MARKING MMBD448 5H MMBD448CA MMBD448CC

More information

BUZ71. 14A, 50V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet December 2001

BUZ71. 14A, 50V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet December 2001 Data Sheet December 21 14A, 5V,.1 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching

More information

QFET TM FQP13N06. Features G D. TO-220 FQP Series

QFET TM FQP13N06. Features G D. TO-220 FQP Series 60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This

More information

Features TO-264 E. Symbol Description SGL40N150D Units V CES Collector-Emitter Voltage 1500 V V GES Gate-Emitter Voltage ± 25 V Collector T

Features TO-264 E. Symbol Description SGL40N150D Units V CES Collector-Emitter Voltage 1500 V V GES Gate-Emitter Voltage ± 25 V Collector T SGLN5D September 2 IGBT SGLN5D General Description Fairchild s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGLN5D is designed for the Induction Heating applications.

More information

MJD31/31C. Symbol Parameter Value Units V CBO Collector-Base Voltage : MJD31 : MJD31C

MJD31/31C. Symbol Parameter Value Units V CBO Collector-Base Voltage : MJD31 : MJD31C MJD3/3C MJD3/3C General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP3 and

More information

Features. TO-220 FQP Series

Features. TO-220 FQP Series FQP4N80 FQP4N80 800V N-Channel MOSFET September 000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

Features. TO-220F SSS Series

Features. TO-220F SSS Series 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has

More information

QFET TM FQP20N06. Features G D. TO-220 FQP Series

QFET TM FQP20N06. Features G D. TO-220 FQP Series 60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This

More information

FJL6820. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case C/W

FJL6820. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case C/W High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V Low Saturation Voltage : (sat) = 3V (Max.) For Color Monitor NPN Triple Diffused Planar Silicon

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted FDS667A Single N-Channel, Logic Level, PowerTrench MOSFET June 23 FDS667A General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process

More information

BC547 BC547A BC547B BC547C

BC547 BC547A BC547B BC547C BC547 BC547A BC547B BC547C BC547 / BC547A / BC547B / BC547C E B C TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents

More information

QFET TM FQA65N20. Features. TO-3P FQA Series

QFET TM FQA65N20. Features. TO-3P FQA Series 200V N-Channel MOSFET August 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

More information

QFET TM FQP85N06. Features G D. TO-220 FQP Series

QFET TM FQP85N06. Features G D. TO-220 FQP Series 60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This

More information

FJA4310. Symbol Parameter Value Units

FJA4310. Symbol Parameter Value Units FJA43 FJA43 Audio Power Amplifier High Current Capability : =A High Power Dissipation Wide S.O.A Complement to FJA42 TO-3P.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

More information

Features. TO-3P IRFP Series

Features. TO-3P IRFP Series 500V N-Channel MOSFET November 2001 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced

More information

Features. Symbol Parameter Q2 Q1 Units

Features. Symbol Parameter Q2 Q1 Units Dual N-Channel, Notebook Power Supply MOSFET General Description Features This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral

More information

QFET TM FQP13N06L. Features G D. TO-220 FQP Series

QFET TM FQP13N06L. Features G D. TO-220 FQP Series 60V LOGIC N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

More information

FDN359BN N-Channel Logic Level PowerTrench TM MOSFET

FDN359BN N-Channel Logic Level PowerTrench TM MOSFET N-Channel Logic Level PowerTrench TM MOSFET January 26 General Description This N-Channel Logic Level MOSFET is produced using Fairchild s Semiconductor s advanced PowerTrench process that has been especially

More information

Features G D. TO-220 FQP Series

Features G D. TO-220 FQP Series FQP34N20L FQP34N20L 200V LOGIC N-Channel MOSFET June 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar

More information

FFPF60B150DS. 120 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +150 C

FFPF60B150DS. 120 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +150 C FFPF6B5DS FFPF6B5DS Features High voltage and high reliability High speed switching Modulation diode / Damper diode Low conduction loss Modulation diode / Damper diode TO-22F Applications (Modulation +

More information

Features D D. I-PAK FQU Series

Features D D. I-PAK FQU Series 1000V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

Features. TO-3PN IRFP Series

Features. TO-3PN IRFP Series 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

QFET TM FQP17P10. Features. TO-220 FQP Series

QFET TM FQP17P10. Features. TO-220 FQP Series 100V P-Channel MOSFET QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced

More information

Features. TO-220F IRFS Series

Features. TO-220F IRFS Series 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has

More information

BDW94/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C

BDW94/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C Power Linear and Switching Applications Power Darlington TR Complement to BDW93, BDW93A, BDW93B and BDW93C respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum

More information

Features S 1. TA=25 o C unless otherwise noted

Features S 1. TA=25 o C unless otherwise noted FCP P-Channel.V PowerTrench Specified MOSFET January FCP General escription This P-Channel.V specified MOSFET uses a rugged gate version of Fairchild s advanced PowerTrench process. It has been optimized

More information

FJAF6810. h FE2 V CE =5V, I C =6A. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case 2.08 C/W

FJAF6810. h FE2 V CE =5V, I C =6A. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case 2.08 C/W FJAF68 FJAF68 High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V High Switching Speed : (typ.) =.µs For Color Monitor TO-3PF.Base 2.Collector 3.Emitter

More information

FJN13003 FJN NPN Silicon Transistor Planar Silicon Transistor

FJN13003 FJN NPN Silicon Transistor Planar Silicon Transistor FJN3003 FJN3003 High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 2W NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings T C =25 C unless

More information

Features I-PAK (TO-251AA) TA=25 o C unless otherwise noted

Features I-PAK (TO-251AA) TA=25 o C unless otherwise noted FDD73BL/FDU73BL 3V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or

More information

QFET FQA36P15. Features

QFET FQA36P15. Features 150V P-Channel MOSFET QFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced

More information

FQA11N90C FQA11N90C. 900V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics.

FQA11N90C FQA11N90C. 900V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics. 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TA = 25 C unless otherwise noted. Symbol Parameter Value Units Discrete POWER & Signal Technologies C B E TO-92 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 ma. Sourced from Process 21. See PN2369A

More information

IRF610. Features. 3.3A, 200V, Ohm, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet January 2002

IRF610. Features. 3.3A, 200V, Ohm, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet January 2002 IRF6 Data Sheet January 22 3.3A, 2V,.5 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed

More information

RFD4N06L, RFD4N06LSM. 4A, 60V, Ohm, Logic Level, N-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging

RFD4N06L, RFD4N06LSM. 4A, 60V, Ohm, Logic Level, N-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging RFDNL, RFDNLSM Data Sheet January A, V,. Ohm, Logic Level, N-Channel Power MOSFETs The RFDNL, RFDNLSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for

More information

FDG6303N Dual N-Channel, Digital FET

FDG6303N Dual N-Channel, Digital FET September FG6N ual N-Channel, igital FET General escription Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

More information

Features GATE SOURCE. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 400 V V GS Gate to Source Voltage ±30 V Drain Current

Features GATE SOURCE. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 400 V V GS Gate to Source Voltage ±30 V Drain Current A, 4V,.55 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies (SMPS) Uninterruptable Power Supply High Speed Power Switching Features Low Gate Charge Q g results in Simple Drive Requirement

More information

RFP2N20L. 2A, 200V, Ohm, Logic Level, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

RFP2N20L. 2A, 200V, Ohm, Logic Level, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002 RFPNL Data Sheet January A, V,.5 Ohm, Logic Level, N-Channel Power MOSFET The RFPNL N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level

More information

QFET TM FQD18N20V2 / FQU18N20V2

QFET TM FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

Features. = 25 C unless otherwise noted

Features. = 25 C unless otherwise noted Dual N & P-Channel PowerTrench MOSFET October 4 General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor s advanced PowerTrench

More information

FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

= 25 o C unless other wise noted Symbol Parameter NDS9945 Units V DSS. Drain-Source Voltage 60 V V GSS. Gate-Source Voltage ±20 V I D

= 25 o C unless other wise noted Symbol Parameter NDS9945 Units V DSS. Drain-Source Voltage 60 V V GSS. Gate-Source Voltage ±20 V I D May 998 N9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

More information

Features. TO-220F SSS Series

Features. TO-220F SSS Series 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has

More information

Features. Reduced r DS(ON) DRAIN GATE

Features. Reduced r DS(ON) DRAIN GATE FDH27N5 27A, 5V,.19 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as PFC Boost Two-Switch Forward Converter Single Switch Forward Converter Flyback Converter Buck

More information

FJN965 FJN965. NPN Epitaxial Silicon Transistor

FJN965 FJN965. NPN Epitaxial Silicon Transistor For Output Amplifier of Electronic Flash Unit Low Collector-Emitter Saturation Voltage High Performance at Low Supply Voltage TO-92. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute

More information

QFET TM FQP13N50C/FQPF13N50C

QFET TM FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TA = 25 C unless otherwise noted. Symbol Parameter Value Units Discrete POWER & Signal Technologies C B E TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 ma. Sourced

More information

QFET TM FQP4N90C/FQPF4N90C

QFET TM FQP4N90C/FQPF4N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

onlinecomponents.com

onlinecomponents.com FQPF7N60 FQPF7N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

FDMS8690 N-Channel PowerTrench MOSFET

FDMS8690 N-Channel PowerTrench MOSFET FDMS869 N-Channel PowerTrench MOSFET 3V, 9.8A, 9mΩ General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction,

More information

QFET FQE10N20LC. Features. TO-126 FQE Series

QFET FQE10N20LC. Features. TO-126 FQE Series 200V Logic N-Channel MOSFET QFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced

More information

KSK595 KSK595. Si N-channel Junction FET

KSK595 KSK595. Si N-channel Junction FET Capacitor Microphone Applications Especially Suited for use in Audio, Telephone Capacitor Microphones Excellent Voltage Characteristic Excellent Transient Characteristic 3 2 SOT-23.Drain 2. Source 3. Gate

More information

Features G D. TO-220 FQP Series

Features G D. TO-220 FQP Series 100V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

More information

Features G D. TO-220 FQP Series

Features G D. TO-220 FQP Series FQP7N60 FQP7N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS

More information

MPSW01 NPN General Purpose Amplifier

MPSW01 NPN General Purpose Amplifier MPSW01 NPN General Purpose Amplifier Features This device is designed for general purpose medium power amplifiers Sourced from process 37 Absolute Maximum Ratings * T a = 25 C unless otherwise noted *

More information

Features. TO-220F IRFS Series

Features. TO-220F IRFS Series 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has

More information

Features. TO-220F FQPF Series

Features. TO-220F FQPF Series 250V P-Channel MOSFET April 2000 QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

More information

Description. TO-220 FCP Series. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

Description. TO-220 FCP Series. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds FDP61N20 200V N-Channel MOSFET Features 61A, 200V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 58 nc) Low C rss ( typical 80 pf) Fast switching 100% avalanche tested Improved dv/dt capability

More information

IRF630, RF1S630SM. 9A, 200V, Ohm, N-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

IRF630, RF1S630SM. 9A, 200V, Ohm, N-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002 IRF3, RFS3SM Data Sheet January 9A, V,. Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested,

More information

Features. TO-220F FQPF Series

Features. TO-220F FQPF Series FQPF6N60 FQPF6N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

IRFS650B IRFS650B. 200V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics. November 2001.

IRFS650B IRFS650B. 200V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics. November 2001. 200V N-Channel MOSFET November 2001 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced

More information

Features. TO-3P FQA Series

Features. TO-3P FQA Series FQA24N60 FQA24N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

FJE3303 High Voltage Fast-Switching NPN Power Transistor

FJE3303 High Voltage Fast-Switching NPN Power Transistor FJE3303 High oltage Fast-Switching NPN Power Transistor High oltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Regulator TO-26. Emitter 2.Collector 3.Base Absolute Maximum

More information

FDH15N50 / FDP15N50 / FDB15N50

FDH15N50 / FDP15N50 / FDB15N50 15A, V,.38 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as PFC Boost Two-Switch Forward Converter Single Switch Forward Converter Flyback Converter Buck Converter

More information

FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor. = 25 o C unless other wise noted Symbol Parameter FDN337N Units V DSS

FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor. = 25 o C unless other wise noted Symbol Parameter FDN337N Units V DSS March 998 FN7N N-Channel Logic Level Enhancement Mode Field Effect Transistor General escription SuperSOT TM - N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

More information

Features. I-PAK FQU Series

Features. I-PAK FQU Series 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced

More information

Features. I-PAK FQU Series

Features. I-PAK FQU Series 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

Features. 13 A, 30 V. R DS(ON) = 11.3 V GS = 10 V R DS(ON) = 14.4 V GS = 4.5 V. RoHS Compliant. Symbol Parameter Ratings Units

Features. 13 A, 30 V. R DS(ON) = 11.3 V GS = 10 V R DS(ON) = 14.4 V GS = 4.5 V. RoHS Compliant. Symbol Parameter Ratings Units 3V N-Channel Fast Switching PowerTrench MOSFET February 27 tm General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either

More information

KSC2881 NPN Epitaxial Silicon Transistor

KSC2881 NPN Epitaxial Silicon Transistor KSC288 NPN Epitaxial Silicon Transistor Power Amplifier Collector-Emitter Voltage : O =20V Current Gain Bandwidth Productor : f T =20MHz Collector Dissipation : P C =~2W in Mounted on Ceramic Board Complement

More information