FDG6303N Dual N-Channel, Digital FET

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September FG6N ual N-Channel, igital FET General escription Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell

1 September FG6N ual N-Channel, igital FET General escription Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. 5,.5 A continuous,.5 A peak. R S(ON) =.45 GS = 4.5, R S(ON) =.6 GS =.7. ery low level gate drive requirements allowing direct operation in circuits ( GS(th) <.5 ). Gate-Source Zener for ES ruggedness (>6k Human Body Model). Compact industry standard SC7-6 surface mount package. SC7-6 SOT- SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT- S G. or 4 * 6 or or 5 5 or SC7-6 G S or 6 4 or * * The pinouts are symmetrical; pin and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter FG6N Units SS rain-source oltage 5 GSS Gate-Source oltage -.5 to +8 I rain/output Current - Continuous.5 A - Pulsed.5 P Maximum Power issipation (Note ). W,T STG Operating and Storage Temperature Range -55 to 5 C ES Electrostatic ischarge Rating MIL-ST-88 Human Body Model ( pf / 5 Ω) THERMAL CHARACTERISTICS 6. k R θja Thermal Resistance, Junction-to-Ambient 45 C/W FG6N Rev.F

2 Electrical Characteristics (T A = 5 O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS B SS rain-source Breakdown oltage GS =, I = 5 µa 5 B SS / Breakdown oltage Temp. Coefficient I = 5 µa, Referenced to 5 o C 6 m/ o C I SS Zero Gate oltage rain Current S =, GS = µa = 55 C µa I GSS Gate - Body Leakage Current GS = 8, S = na ON CHARACTERISTICS (Note ) GS(th) Gate Threshold oltage S = GS, I = 5 µa GS(th) / Gate Threshold oltage Temp.Coefficient I = 5 µa, Referenced to 5 o C -.6 m/ o C R S(ON) Static rain-source On-Resistance GS = 4.5, I =.5 A.4.45 Ω =5 C GS =.7, I =. A.44.6 I (ON) On-State rain Current GS =.7, S = 5.5 A g FS Forward Transconductance S = 5, I =.5 A.45 S YNAMIC CHARACTERISTICS C iss Input Capacitance S =, GS =, 5 pf C oss Output Capacitance f =. MHz 8 pf C rss Reverse Transfer Capacitance 9 pf SWITCHING CHARACTERISTICS (Note ) t (on) Turn - On elay Time = 5, I =.5 A, 6 ns t r Turn - On Rise Time GS = 4.5, R GEN = 5 Ω ns t (off) Turn - Off elay Time 7 ns t f Turn - Off Fall Time 5 ns Q g Total Gate Charge S = 5, I =.5 A,.64. nc Q gs Gate-Source Charge GS = nc Q gd Gate-rain Charge.45 nc RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Continuous Source Current.5 A S rain-source iode Forward oltage GS =, I S =.5 A (Note ).8. Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. R θja = 45 O C/W on minimum pad mounting on FR-4 board in still air.. Pulse Test: Pulse Width < µs, uty Cycle <.%. FG6N Rev.F

3 S S(ON) Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A) = 4.5 GS R, NORMALIZE RAIN-SOURCE ON-RESISTANCE.5 =. GS S, RAIN-SOURCE OLTAGE () I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance ariation with rain Current and Gate oltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I =.5A GS = T, JUNCTION TEMPERATURE ( C) J R S(on), ON-RESISTANCE (OHM) T = 5 C A T = 5 C A GS, GATE TO SOURCE OLTAGE () I =.A Figure. On-Resistance ariation with Temperature. Figure 4. On-Resistance ariation with Gate-to-Source oltage. I, RAIN CURRENT (A) = 5. S T = -55 C J 5 C 5 C I, REERSE RAIN CURRENT (A)... GS = T = 5 C J 5 C -55 C GS, GATE TO SOURCE OLTAGE () S, BOY IOE FORWAR OLTAGE () Figure 5. Transfer Characteristics. Figure 6. Body iode Forward oltage ariation with Source Current and Temperature. FG6N Rev.F

4 Typical Electrical Characteristics (continued) GS, GATE-SOURCE OLTAGE () 5 4 I =.5A Q g, GATE CHARGE (nc) S = 5 5 CAPACITANCE (pf) 7 f = MHz GS = S, RAIN TO SOURCE OLTAGE () C iss C oss C rss Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. I, RAIN CURRENT (A) RS(ON) LIMIT GS = 4.5 SINGLE PULSE R θja = 45 C/W T A= 5 C s C s ms, RAI N-SOURCE OLTAGE () S ms ms POWER (W) SINGLE PULSE TIME (SEC) SINGLE PULSE R θja=45 C/W T A= 5 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIE TRANSIENT THERMAL RESISTANCE = Single Pulse..... t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R θja =45 C/W t t - T A = P * R θja (t) uty Cycle, = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note. Transient thermal response will change depending on the circuit board design. FG6N Rev.F

5 TRAEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx ActiveArray Bottomless CoolFET CROSSOLT OME EcoSPARK E CMOS TM EnSigna TM ISCLAIMER FAIRCHIL SEMICONUCTOR RESERES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROE RELIABILITY, FUNCTION OR ESIGN FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRCHIL SEMICONUCTOR CORPORATION As used herein: Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user PROUCT STATUS EFINITIONS efinition of Terms FACT FACT Quiet Series FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I C Across the board Around the world The Power Franchise Programmable Active roop Impliedisconnect ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC â OPTOPLANAR PACMAN POP Power47 PowerTrench â QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER â SMART START A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness atasheet Identification Product Status efinition SPM Stealth SuperSOT - SuperSOT -6 SuperSOT -8 SyncFET TinyLogic â TruTranslation UHC UltraFET â CX Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development Specifications may change in any manner without notice This datasheet contains preliminary data, and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only Rev I

FDC6303N Digital FET, Dual N-Channel

FDC6303N Digital FET, Dual N-Channel August 997 FC6N igital FET, ual N-Channel General escription Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,